1N750 400mW
Abstract: 1N746 1N747 1N748 1N749 1N750 1N751 1N752 1N753 1N759
Text: Transys Electronics L I M I T E D SILICON ZENER DIODES 1N746 to 1N759 DO-35 400mW Hermetically Sealed Glass Package Zener Diodes ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT ZV 3.3 to 12 V Zener Voltage PD 400 mW D C Power Dissipation 3.2 mW/deg C
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1N746
1N759
DO-35
400mW
200mA
1N750 400mW
1N747
1N748
1N749
1N750
1N751
1N752
1N753
1N759
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Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
O-252
O-251
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2SD2018
Abstract: No abstract text available
Text: Power Transistors 2SD2018 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 3.05±0.1 • High forward current transfer ratio hFE • Built-in 60 V Zener diode between base to collector • Darlington connection
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2SD2018
2SD2018
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STSJ2NM60
Abstract: No abstract text available
Text: STSJ2NM60 N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STSJ2NM60 600 V < 3.2 Ω 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STSJ2NM60
STSJ2NM60
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STSJ2NM60
Abstract: No abstract text available
Text: STSJ2NM60 N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STSJ2NM60 600 V < 3.2 Ω 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STSJ2NM60
STSJ2NM60
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Untitled
Abstract: No abstract text available
Text: STSJ2NM60 N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STSJ2NM60 600 V < 3.2 Ω 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STSJ2NM60
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marking code 41b
Abstract: No abstract text available
Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920B
marking code 41b
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Untitled
Abstract: No abstract text available
Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920B
1PMT5920B/D
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1PMT5920B
Abstract: 1PMT5920BT1 1PMT5921BT1 1PMT5922BT1 1PMT5923BT1 1PMT5924BT1 1PMT5925BT1 GT320B GT329B
Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920B
1PMT5920B/D
1PMT5920BT1
1PMT5921BT1
1PMT5922BT1
1PMT5923BT1
1PMT5924BT1
1PMT5925BT1
GT320B
GT329B
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1PMT5927
Abstract: ONSEMI 24B 1PMT5920B 1PMT5920BT1G 1PMT5921BT1G 1PMT5924BT1G 1PMT5927BT1G 1PMT5929BT1G 1PMT5933BT1G DO-216AA
Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920B
1PMT5920B/D
1PMT5927
ONSEMI 24B
1PMT5920BT1G
1PMT5921BT1G
1PMT5924BT1G
1PMT5927BT1G
1PMT5929BT1G
1PMT5933BT1G
DO-216AA
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Untitled
Abstract: No abstract text available
Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920B
1PMT5920B/D
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DC-5002-00
Abstract: 1PMT5920BT1 1PMT5921BT1 1PMT5922BT1 1PMT5923BT1 1PMT5924BT1 1PMT5925BT1 1PMT5920B
Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920B
1PMT5920B/D
DC-5002-00
1PMT5920BT1
1PMT5921BT1
1PMT5922BT1
1PMT5923BT1
1PMT5924BT1
1PMT5925BT1
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1N5988B
Abstract: 1N5273B 1N5274B 1N5275B 1N5276B 1N5277B 1N5278B 1N5279B 1N5280B 1N5281B
Text: Zener Diodes 500 mW Operating Temperature: -55 o C to 150oC CrossReference Norminal Zn. Vltg. @IZT Test Current Max. Zener Impedance @lZT Max. Zener Impedance @ .25mA Part No. 1N5273B 1N5274B 1N5275B 1N5276B 1N5277B 1N5278B 1N5279B 1N5280B 1N5281B 500 mW αvz %/°C
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150oC
1N5273B
1N5274B
1N5275B
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B
1N5988B
1N5273B
1N5274B
1N5275B
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 - BZX84C75 SURFACE MOUNT ZENER DIODE FEATURES SOT-23 ● Planar Die construction ● 225mW Power Dissipation ● Ideally Suited for Automated Assembly Processes ● Pb free product are available : 99% Sn above can meet Rohs environment substance directive request
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BZX84C2V4
BZX84C75
OT-23
225mW
OT-23,
MIL-STD-202,
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Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Zener diode STZ6.8NFH Applications Voltage regulation Anode common twin type Land size figure (Unit : mm) Dimensions (Unit : mm) 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each
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AEC-Q101
S0T-346
SC-59
100mA
300us
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet Zener diode STZ6.8N Applications Voltage regulation Anode common twin type Dimensions (Unit : mm) Land size figure (Unit : mm) 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Features 1) Small mold type. (SMD3)
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S0T-346
SC-59
100mA
300us
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet Zener diode STZ6.8N Dimensions Unit : mm Applications Voltage regulation (Anode common twin type) Land size figure (Unit : mm) 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Features 1) Small mold type. (SMD3)
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S0T-346
SC-59
05MIN
10pcs
100mA
300us
R1120A
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Untitled
Abstract: No abstract text available
Text: STZ6.8T Data Sheet Zener diode STZ6.8T Dimensions Unit : mm Applications Voltage regulation (Cathode common twin type) Land size figure (Unit : mm) 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Features
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S0T-346
SC-59
05MIN
10pcs
100mA
300us
R1120A
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S0T-346
Abstract: No abstract text available
Text: STZ6.8N Data Sheet Zener diode STZ6.8N Dimensions Unit : mm Applications Voltage regulation (Anode common twin type) Land size figure (Unit : mm) 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Features
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S0T-346
SC-59
05MIN
10pcs
100mA
300us
R1120A
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marking T10
Abstract: t17 sot23 SOT-23 MARKING T16 Z11 Marking Code BZX84CxxxLT1G
Text: BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well
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BZX84B4V7LT1,
BZX84C2V4LT1
OT-23
marking T10
t17 sot23
SOT-23 MARKING T16
Z11 Marking Code
BZX84CxxxLT1G
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRON 11 U D. ZENER DIODE F SERIES SEMICONDUCTOR TECHNICAL DATA Zener Diode F Series lW Ta=25°C M in(V ) M ax(V ) Iz(m A ) M ax.Z ener Im pedance Rz( Q ) FZD 2.7 2.6 2.9 40 FZD 3.0 2.8 3.2 FZD3.3 3.1 FZD 3.6 IR (uA ) V R (V ) T cm perature
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FZD43
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diode zener ZD 15
Abstract: diode zener fz 12.6 zener diode d27 zener zd 31 diode zener ZD 39 zener diode fz diode zener ZD 200 diode zd 33 FZD18 diode zd 22
Text: ZENER DIODE F SERIES SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONS > I D. Zeiier Diode F Series(lW K Ta=25°C Min(V) Max(V) Iz(mA) M ax.Zener Impedance Rz( Q ) FZD2.7 2.6 2.9 40 FZD3.0 2.8 3.2 FZD3.3 3.1 FZD3.6 IR(uA) VR(V) T emperature Coefficient
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FZD13
FZD15
FZD16
FZD18
FZD20
FZD22
FZD24
FZD30
FZD33
FZD36
diode zener ZD 15
diode zener fz 12.6
zener diode d27
zener zd 31
diode zener ZD 39
zener diode fz
diode zener ZD 200
diode zd 33
diode zd 22
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BZX 110
Abstract: BZX-B5 20823 zx85
Text: ZENER DIODES Z w w r O io d M with Pv - 1 , 3 W Typ* Electrical characteristic« for VZ7' a nd ^2 nom lZJ V mA 2.7 80 B Z X 85/C 3 V 0 3.0 80 2.B.3.2 B Z X 85/C 3 V 3 3.3 70 3 1 3 5 B Z X 85/C 2 V 7 rz)T V 2.5.2.9 at û ¡ZK /R a * mA mA V 1 VK -0 0 6 .-0 0 5
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