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    3.3KV DIODE Search Results

    3.3KV DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    3.3KV DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FZ1200R33KF2C

    Abstract: igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r
    Text: MARKETING NEWS Date:2003-03-07 Page 1 of 2 MN-Number: MN2003-03 Introduction of the new 3.3kV EmCon-HDR Diode Due to new perceptions of eupec and Infineon in simulation and design, the lateral device structure of 3.3kV diodes could be improved. Thus we are able to expand the safe operation area SOA of the 3.3kV


    Original     		MN2003-03 FZ1200R33KF2 FZ1200R33KF2C FZ1200R33KF2C D-59581 igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r PDF

    A 3150V

    Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
    Text: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT


    Original     		500Hz-1000Hz A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT PDF

    HP STEP RECOVERY DIODES

    Abstract: cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann
    Text: CIBH Diode with Superior Soft Switching Behavior in 3.3kV Modules for Fast Switching Applications Jürgen Biermann, Infineon Technologies AG, Max-Planck-Strasse 5, D-59581 Warstein, Germany Manfred Pfaffenlehner, Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany


    Original     		D-59581 D-85579 HP STEP RECOVERY DIODES cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann PDF

    HIGH VOLTAGE 3.3kv mosfet

    Abstract: STR D 6601 mitsubishi electric igbt module igbt 3.3kv HIGH VOLTAGE DIODE 3.3kv HVIGBT from Mitsubishi electric 80E04 3.3kv diode IC1 4558 powerex cd
    Text: Design Approach of Newly Developed 3.3kV IGBT Modules 1 Shinichi Iura(1), John F. Donlon(2), Eckhard Thal(3) MITSUBISHI ELECTRIC, POWER DEVICE WORKS 1-1-1 Imajukuhigashi Nishi-ku Fukuoka, Japan Tel.: +81 / (92) – 805.3395 Fax: +81 / (92) – 805.3745 (2)


    Original     		com/library/content/c020311b HIGH VOLTAGE 3.3kv mosfet STR D 6601 mitsubishi electric igbt module igbt 3.3kv HIGH VOLTAGE DIODE 3.3kv HVIGBT from Mitsubishi electric 80E04 3.3kv diode IC1 4558 powerex cd PDF

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


    Original     		D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation PDF

    press-pack igbt

    Abstract: statcom igbt 3.3kv Discrete IGBTS IGBT 5kV IGBT presspack D-68623 westcode igbt
    Text: NEW PRODUCT BRIEF ! w e N Engineered Press-Pack IGBT Stack Solutions May 2010 Issue 1 Let us help you take the next steps in Megawatt drives Voltage Ratings of 3.3kV to 6.6kV 2L, 3L, NPC and Multi-cell configurations 2 to 20 MW To see our full range of 2.5kV and 4.5kV


    Original     		D-68623 press-pack igbt statcom igbt 3.3kv Discrete IGBTS IGBT 5kV IGBT presspack westcode igbt PDF

    HIGH VOLTAGE DIODE 3.3kv

    Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
    Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany


    Original     		D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv PDF

    6.5kV IGBT

    Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
    Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)


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    eupec igbt 3300v

    Abstract: Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec 2902 eupec igbt driver eupec module igbt emcon diode 3.3kv diode
    Text: Press Release – May 2003 PCIM 2003 eupec is introducing its new 3300V High Power Emcon-HDR Diode with High Dynamic Robustness eupec’s second generation 3300V High Power Module family is now being offered with a new diode and the new name KF2C, featuring a SOA which is increased by the factor of two.


    Original     		D-59581 eupec igbt 3300v Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec 2902 eupec igbt driver eupec module igbt emcon diode 3.3kv diode PDF

    1287-standard

    Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
    Text: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability


    Original     		PDF

    6.5kV IGBT

    Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
    Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany


    Original     		D-59581 D-85579 6.5kV IGBT 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode PDF

    FZ1200R33KF1

    Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv
    Text: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became


    Original     		200V/1600V FZ1200R33KF1 FZ1200R33KF1 igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv PDF

    step down chopper

    Abstract: igbt 6.5 kv snubber step down chopper using igbt APPLICATIONS OF dc chopper circuit dc to dc chopper using igbt dc to dc chopper by thyristor IGBT 3kv 6.5kV IGBT david rheostatic braking
    Text: HIGH VOLTAGE IGBT MODULES IN THE DESIGN OF A 3KV CHOPPER Alexis Colasse, Jean-Emmanuel Masselus, David Zorzynski ALSTOM BELGIUM sector TRANSPORT 50-52, rue Cambier Dupret 6000 CHARLEROI, BELGIUM tel. : +32 71 44 54 53, fax : +32 71 44 57 72 [email protected]


    Original     		PDF

    igbt spice model

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR
    Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*


    Original     		D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR PDF

    eupec igbt 10kv

    Abstract: Inverter Delta 6.5kV IGBT igbt 3.3kv eupec igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter eupec igbt 6.5kV thyratron DIAGRAM thyristor inverter
    Text: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 764-1153 Fax: +49 2902 764-1150 [email protected] In an effort to combine the advantages of modern high voltage IGBT chip and packaging technology


    Original     		PDF

    line follower sensor

    Abstract: CCD output buffer Diode ta9 image sensors line follower voltage follower schematic 74ACT04 BAT74 EL7412 FXA1012
    Text: Philips Semiconductors Application note Using the FXA1012 CCD Image Sensor AN02 AN02 Using the FXA1012 CCD Image Sensor Authors: P. te Vaarwerk, J. Bosiers 1999 November November 1, 1999 Philips Semiconductors Application note Using the FXA1012 CCD Image Sensor


    Original     		FXA1012 line follower sensor CCD output buffer Diode ta9 image sensors line follower voltage follower schematic 74ACT04 BAT74 EL7412 PDF

    bipolar capacitor 1000MF 100v

    Abstract: 20-PIN IRL3103D1S IRL3103S IRLR024 IRU3004 IRU3004CF IRU3004CW MPS2222A 108 R12 263
    Text: Data Sheet No. PD94140 IRU3004 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH DUAL LDO CONTROLLER DESCRIPTION FEATURES Meets latest VRM 8.4 specification for PentiumIII Provides single chip solution for Vcore, GTL+ and clock supply On-Board DAC programs the output voltage from


    Original     		PD94140 IRU3004 IRU3004 bipolar capacitor 1000MF 100v 20-PIN IRL3103D1S IRL3103S IRLR024 IRU3004CF IRU3004CW MPS2222A 108 R12 263 PDF

    failure analysis IGBT

    Abstract: AN2001-05 use of igbt in power system IGBT JUNCTION TEMPERATURE CALCULATION calculation of the major IGBT operating 3.3kv diode AN2008-03 Thermal model igbt
    Text: Application Note, V1.0, 2008 AN2008-03 Thermal equivalent circuit models replaces AN2001-05 Industrial Power Edition 2008-06-16 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2008. All Rights Reserved. LEGAL DISCLAIMER


    Original     		AN2008-03 AN2001-05 failure analysis IGBT AN2001-05 use of igbt in power system IGBT JUNCTION TEMPERATURE CALCULATION calculation of the major IGBT operating 3.3kv diode AN2008-03 Thermal model igbt PDF

    aei thyristors

    Abstract: aei thyristors gec igbt firing circuit for single phase induction motor Electric Welding Machine thyristor renault 20kV thyristor soft switching techniques IN INDUCTION HEATING IN "bi-directional switches" IGBT bi-directional switches IGBT igbt welding machine scheme
    Text: Power Electronic Assembly Products Electro/Mechanical Thermal Components Traction Refurbishment ? ? Standard Power Assemblies New Product Design & Development RECTIFIERS, PULSED POWER, INVERTERS, AC SWITCHES, STACKS An ISO 9001: 2000 ISO 14001 Company 45 years in Power Electronics Assembly


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    B0817

    Abstract: No abstract text available
    Text: Medium voltage fuses Medium voltage fuses Medium voltage fuses Medium voltage fuses European Fuses DIN Fuses 7.2kV - 36kV IBD 7.2 UP TO 36 KV HIGH-VOLTAGE FUSES DESIGNED FOR POWER TRANSFORMER PROTECTION INTERIOR/EXTERIOR USE CERAMIC HOUSING “MEDIUM” CLASS TRIP-INDICATOR


    Original     		MV102 B0817 PDF

    IEGT

    Abstract: HIGH VOLTAGE 3.3kv mosfet Brunner vertical mosfet scsoa JF-25 3.3kv diode 600V GaN mitsubishi igbt cm
    Text: IGBT Module Chip Improvements for Industrial Motor Drives John F. Donlon Katsumi Satoh Powerex, Inc. 173 Pavilion Lane Youngwood, PA USA Mitsubishi Electric Corporation Power Semiconductor Device Works Fukuoka JAPAN Abstract—Since the introduction of the IGBT module,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD94142 IRU3007 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES DESCRIPTION Provides Single Chip Solution for Vcore, GTL+, Clock Supply & 3.3V Switcher On-Board Second switcher provides simple control for the


    Original     		PD94142 IRU3007 200mA IRU3007 PDF

    680MF 10V

    Abstract: capacitor 1500MF 6.3v INTEL Core i5 760 HIGH VOLTAGE 3.3kv mosfet ELECTROLYTIC 680MF 200V we 1500mf 6.3V electrolytic capacitor irf 9430 5052B 680MF 200V IRL3103D1S
    Text: Data Sheet No. PD94144 IRU3018 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC, LDO CONTROLLER AND 200mA ON-BOARD LDO REGULATOR FEATURES DESCRIPTION Provides single chip solution for Vcore, GTL+ & clock supply 200mA On-Board LDO Regulator Designed to meet the latest Intel specification for


    Original     		PD94144 IRU3018 200mA 680MF 10V capacitor 1500MF 6.3v INTEL Core i5 760 HIGH VOLTAGE 3.3kv mosfet ELECTROLYTIC 680MF 200V we 1500mf 6.3V electrolytic capacitor irf 9430 5052B 680MF 200V IRL3103D1S PDF

    Q1/IRON POWDER

    Abstract: No abstract text available
    Text: Data Sheet No. PD94142 IRU3007 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES DESCRIPTION Provides Single Chip Solution for Vcore, GTL+, Clock Supply & 3.3V Switcher On-Board Second switcher provides simple control for the


    Original     		PD94142 IRU3007 200mA Soft-Sta93 Q1/IRON POWDER PDF