30 W RF POWER TRANSISTOR NPN Search Results

30 W RF POWER TRANSISTOR NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

30 W RF POWER TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
adc 809 Abstract: ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads mallory 150 series 1N4997 MRF422 Text: Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP	Original	MRF422/D MRF422 adc 809 ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads mallory 150 series 1N4997 MRF422	PDF
TH416 Abstract: No abstract text available Text: TH416 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH416 is a 28 V epitaxial planar transistor primarily designed for SSB communications. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: A • PG = 12 dB min. at 130 W/30 MHz • IMD = -30 dBc max. at 130 W PEP	Original	TH416 TH416 112x45° PDISS89	PDF
HF220-50 Abstract: ASI10614 Text: HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 13 dB Typical at 220 W/30 MHz • IMD3 = -30 dBc Max. at 220 W PEP	Original	HF220-50 HF220-50 112x45° ASI10614	PDF
SD1407 Abstract: 1257 transistor Text: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output	Original	SD1407 SD1407 112x45° 1257 transistor	PDF
MRF421 Abstract: No abstract text available Text: MRF421 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W PEP	Original	MRF421 MRF421 112x45° ASI10824	PDF
HF75-50F Abstract: ASI10610 2 F transistor Text: HF75-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF75-50F is 50 V Class AB NPN Power transistor, designed for SSB & VHF Communacations. FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W PEP	Original	HF75-50F HF75-50F ASI10610 ASI10610 2 F transistor	PDF
BLW97 Abstract: TRANSISTOR blw97 2050F Text: BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 11.5 dB min. at 175 W/30 MHz • IMD3 = -30 dBc max. at 175 W PEP	Original	BLW97 BLW97 112x45° TRANSISTOR blw97 2050F	PDF
SD1487 Abstract: No abstract text available Text: SD1487 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1487 is Designed for HF communicatons up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A Ø.125 NOM. FULL R • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W PEP	Original	SD1487 SD1487 112x45° 980MUM	PDF
MRF426 Abstract: No abstract text available Text: MRF426 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF426 is Designed for high gain amplifier applications up to 30 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A C E • PG = 22 dB min. at 25 W/30 MHz • IMD3 = -30 dBc max. at 25 W PEP	Original	MRF426 MRF426	PDF
MRF460 Abstract: No abstract text available Text: MRF460 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF460 is Designed for 12.5 Volt Power Amplifier Applications up to 30 MHz. FEATURES INCLUDE: • Omnigold Metalization System • PG = 12 dB Min. @ 30 MHz & 40 W • Efficiency 40% PACKAGE STYLE .500" 4L FLANGE	Original	MRF460 MRF460	PDF
MRF428 Abstract: No abstract text available Text: MRF428 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W PEP • Omnigold Metalization System	Original	MRF428 MRF428 112x45°	PDF
HF5-12S Abstract: ASI10591 HF512S Text: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP	Original	HF5-12S HF5-12S 112x45° ASI10591 ASI10591 HF512S	PDF
HF75-28S Abstract: h bridge 3v ASI10607 Text: HF75-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 STUD The ASI HF75-28S is Designed for bradband aplications up to 30 MHz. .112x45° A B C E FEATURES: ØC • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W PEP • Omnigold Metalization System	Original	HF75-28S HF75-28S 112x45° ASI10607 h bridge 3v ASI10607	PDF
MRF1946a Abstract: DIC16 Text: MRF1946A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES INCLUDE: C B • High Common Emitter Power Gain • Output Power = 30 W	Original	MRF1946A MRF1946A 112x45° DIC16	PDF

MRF448 Abstract: No abstract text available Text: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP	Original	MRF448 MRF448 112x45° ASI10866	PDF
HF250-50 Abstract: ASI10615 250WPEP Text: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP	Original	HF250-50 HF250-50 ASI10615 ASI10615 250WPEP	PDF
S100 NPN Transistor Abstract: S100-28 S100 transistor Text: S100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 100-28 is designed for HF linear applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 16 dB min. at 100 W/30 MHz • High linear power output • IMD = -32 dBc max. at 100 W PEP	Original	S100-28 112x45° S100 NPN Transistor S100-28 S100 transistor	PDF
HF8-28F Abstract: ASI10600 Text: HF8-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28F is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 21 dB min. at 8 W/30 MHz	Original	HF8-28F HF8-28F 13TERISTICS ASI10600 ASI10600	PDF
BLW50F Abstract: ASI10834 Text: BLW50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW50F is Designed for use in transmitters in the HF and VHF band applications up tp 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W PEP	Original	BLW50F BLW50F ASI10834 ASI10834	PDF
MRF429 Abstract: MM100V Text: MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W PEP	Original	MRF429 MRF429 112x45° MM100V	PDF
MRF314A Abstract: ASI10770 Text: MRF314A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF314A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold Metalization System	Original	MRF314A MRF314A 112x45° ASI10770 ASI10770	PDF
CQ 20.000 Abstract: MRF421 equivalent MRF421 1N4997 Text: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP	OCR Scan	MRF421 150mA CQ 20.000 MRF421 equivalent MRF421 1N4997	PDF
MPS-U31 Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1 Text: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.	OCR Scan	MPS-U31 MPS8000 MPS8001 AN-S96- Dow-340 0ow-340 MPS-U31 MPSU31 MOTOROLA an-596 DOW 340 an-596 5659065-3B MPS-U31-1	PDF
mrf422 Abstract: mallory 150 series 1N4997 Text: m otorola SEMICONDUCTOR t e c h n ic a l d a t a The RF Line fjpN Silicon RF Power Transistor MRF422 Designed primarily for applications as a h igh-pow er linear amplifier from 2.0 to 30 MHz. . Specified 28 Volt, 30 MHz Characteristics — Output Powpr = 150 W PEP	OCR Scan	MRF422 mrf422 mallory 150 series 1N4997	PDF

30 W RF POWER TRANSISTOR NPN Search Results

30 W RF POWER TRANSISTOR NPN Result Highlights (5)

30 W RF POWER TRANSISTOR NPN Datasheets Context Search

adc 809

TH416

HF220-50

SD1407

MRF421

HF75-50F

BLW97

SD1487

MRF426

MRF460

MRF428

HF5-12S

HF75-28S

MRF1946a

MRF448

HF250-50

S100 NPN Transistor

HF8-28F

BLW50F

MRF429

MRF314A

CQ 20.000

MPS-U31

mrf422