A7t diode
Abstract: diode a7t 30-06 A7T L 3006 MWI 30-06 A7T 30-06A7T th 3006
Text: MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4
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MWI3006A7
A7t diode
diode a7t
30-06 A7T
L 3006
MWI 30-06 A7T
30-06A7T
th 3006
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Untitled
Abstract: No abstract text available
Text: MWI 30-06 A7 MWI 30-06 A7T IC25 = 45 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 11 12 7 8 E72873
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E72873
MWI3006A7
20070912a
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30-06 A7T
Abstract: E72873 NTC 100 - 11
Text: MWI 30-06 A7 MWI 30-06 A7T IC25 = 45 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T 1 2 5 6 9 10 T NTC 16 15 14 without NTC with NTC 3 4 7 8 11 12 E72873
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E72873
MWI3006A7
20070912a
30-06 A7T
E72873
NTC 100 - 11
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3006A7
Abstract: MWI 30-06 A7T
Text: Advanced Technical Information MWI 30-06 A7 IC25 = 45 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Type NTC - Option MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7
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B25/50
3006A7
MWI 30-06 A7T
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VUO 121-16 NO1
Abstract: D-68623 MKI 75-06 A7 IXYS VUO 30
Text: Product Change Notice PCN No.: 04/06 Customer: All IXYS product type: Package: E2 (see pictures on page 2) Products: See page 2 Description of change: New molding tool for E2 housing Reason for change: Releasing second source supplier to ensure delivery performance
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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Untitled
Abstract: No abstract text available
Text: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13
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WS256K8-XCX
256Kx8
MIL-STD-883
06HXX
07HXX
256Kx
08HXX
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ltdf
Abstract: 28C64A 28C64A-20 28C64A-25
Text: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-
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28C64A
ds11109a-8
ltdf
28C64A
28C64A-20
28C64A-25
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Untitled
Abstract: No abstract text available
Text: HN27C101AP/AFP/ATT Series HN27C301AP/AFP Series 131072-word x 8-bit CMOS One Time Electrically Programmable ROM HITACHI Description The HN27C101AP/AFP/ATT series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101 AP/AFP/ATT, HN27C301AP /AFP series are in the "1" state output high .
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HN27C101AP/AFP/ATT
HN27C301AP/AFP
131072-word
HN27C101
HN27C301AP
32-pin
HN27C101ATT
high-reliabilit/00
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9P4M
Abstract: 10P4M 12P4M 12p8 PLE5P8 PLE8P8 8p4c t461 PLE5P8A
Text: MONOLITHIC MEMORIES INC tfl » e J b3D3mO □ OOS'tkS 3 f D r-'W ’ Programmable Logic Element PLE Circuit Fam ily Ordering Information Features/Benefits PLE5P8 A C N STD • Programmable replacement for conventional TTL logic TZPR O C ESSIN G T • Reduces 1C inventories and simplities their control
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A10A9A6'
9P4M
10P4M
12P4M
12p8
PLE5P8
PLE8P8
8p4c
t461
PLE5P8A
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PDF
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AT49F1025-70VC
Abstract: AT49F1025
Text: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Word By Word Programming -1 0 ^s/Word Typical Hardware Data Protection
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10x14
AT49F1025
MO-142
AT49F1025-70VC
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Untitled
Abstract: No abstract text available
Text: HY62256A Series •HYUNDAI 32K X 8-blt CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256A
speed-55/70/85/100ns
1DC01-11-MAY94
HY62256AP
HY62256ALP
HY62256ALLP
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Triac t460
Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Text: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •
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O-220AB'
oTO-220AB
Triac t460
JE 33
H112
T210
T460
X108
triac BT 0266
8P2SM
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Untitled
Abstract: No abstract text available
Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL
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HM62W8128
131072-Word
8128LP-10
8128LP-12
8128LP-1O
LP-12
8128LFP-10
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TC571000D-15
Abstract: TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 TC571000D tc571001d h102 d1 tc5710000
Text: TOSHIBA MOS MEMORY PRODUCTS T C 5 710 0 0 D -15 , -20, -200, -25 T C 5 71 0 0 1D -15 , -20, -200, -25 IDESCRIPTIONI The TC571000D/TC571001D is a 131,072 word * 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC571000D is JEDEC standard pin configuration and the TC571001D is compatible with
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TC571000D/TC571001D
TC571000D
TC571001D
30mA/6
150ns/200ns/250ns.
TC571000D/TC571001D.
TC571001D
TC571000D-15
TC5710000-15
TC571001D-15
571000D
TC531000P
TC5710010-15
h102 d1
tc5710000
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EZ722
Abstract: A7t smd EZ524 smd code A7t smd A6t zd 409 5962-88525 07 xa Select 642 UX A14C AT28C256
Text: Features • Fast Read Access Time -150 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 3 ms or 10 ms Maximum - 1 to 64-Byte Page Write Operation
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64-Byte
AT28C256
EZ722
A7t smd
EZ524
smd code A7t
smd A6t
zd 409
5962-88525 07 xa
Select 642 UX
A14C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY 4ÖE D DD523Ô0 32,768 W O R D x 9 BIT BiCM O S STATIC R A M 1 PRELIMINARY DESCRIPTION The TC55B329P/J is a 294,912 bits high speed static random access memory organized as 32,768 words by 9 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba's BiCMOS
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DD523Ã
TC55B329P/J
TC55B329P/Jâ
TC55B329P/J-12,
TC55B329P/J-15
DIP32-P-300)
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MHS 65756
Abstract: HM1-65756
Text: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE
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00G5171
MHS 65756
HM1-65756
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PDF
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smd A7t
Abstract: smd code A7t
Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
smd A7t
smd code A7t
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Untitled
Abstract: No abstract text available
Text: M 2 ic r o c h ip 8 C 1 6 A 16K 2K x 8 CMOS EEPROM BLOCK DIAGRAM FEATURES I/O O • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years
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OCR Scan
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DS11125E-page
bl03201
28C16A
28C16AF
8x20mm
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PDF
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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PDF
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Untitled
Abstract: No abstract text available
Text: G 2 WMF128K8-XXX5 M/HITE /MICROELECTRONICS 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • A c c e s s T i m e s o f 60, 7 0, 90, 120, 1 5 0 n s ■ O rg a n iz e d as 1 2 8 K x 8 ■ P a c k a g in g ■ C o m m e r c i a l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s
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WMF128K8-XXX5
128Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HY2316050 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS
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HY2316050
16-bit
16Mbit
16bit
120ns
16bit
600miJ
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