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    300 01 DIODE Search Results

    300 01 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    300 01 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BZX84 X8

    Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
    Text: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage


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    BZX84C2V4 BZX84C47 OT-23 O-236) UL94V-0 Y14/Z9 Y15/A0 Y16/B0 BZX84 X8 SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3 PDF

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    Abstract: No abstract text available
    Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung


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    BZX84B2V4 BZX84B47 OT-23 O-236) UL94V-0 PDF

    ABB IGBT

    Abstract: TF PTC 0300U120 5SNS 0300U120100
    Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1528-01 Jan. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless


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    0300U120100 5SYA1528-01 CH-5600 ABB IGBT TF PTC 0300U120 5SNS 0300U120100 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


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    0300U120100 5SYA1528-01 CH-5600 PDF

    mj 340

    Abstract: 5SNS 0300U120100 5SNS0300U120100
    Text: VCE IC = = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 PRELIMINARY • • • • • Doc. No. 5SYA1528-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


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    0300U120100 5SYA1528-01 Po300U120100 CH-5600 mj 340 5SNS 0300U120100 5SNS0300U120100 PDF

    322CNQ

    Abstract: 322CNQ030
    Text: Preliminary Data Sheet PD-2.550 01/98 322CNQ030 300 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 322CNQ030 Units 300 A 30 V 150 °C TJ operation 10,000 A High Surge Capability Center tap module


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    322CNQ030 322CNQ030 322CNQ 249AA PDF

    303CNQ

    Abstract: 303CNQ080 303CNQ100 IRFP460
    Text: Bulletin PD-2.234 rev. D 07/01 303CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 303CNQ. Units 300 A 80 to 100 V 22,000 A 175 °C TJ operation Center tap module


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    303CNQ. O-244AB 303CNQ IRFP460 FL40S02 303CNQ080 303CNQ100 IRFP460 PDF

    diode KE

    Abstract: 274 transistor KE-01 diode KE 01 DATASHEET SCR ke on module scr scr datasheet igbt scr applications
    Text: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations


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    PDF

    KE DIODE ON

    Abstract: diode KE KE-01 diode KE 01
    Text: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations


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    marking of m7 diodes

    Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


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    M3D049 BZX384 OD323 SCA75 613514/01/pp12 marking of m7 diodes m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes PDF

    300CNQ

    Abstract: 300CNQ035 300CNQ040 300CNQ045 20481
    Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for


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    PD-20481 300CNQ. O-244AB 300CNQ 300CNQ035 300CNQ040 300CNQ045 20481 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for


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    PD-20481 300CNQ. O-244AB 300CNQ 08-Mar-07 PDF

    300CNQ

    Abstract: 300CNQ035 300CNQ040 300CNQ045
    Text: Bulletin PD-20481 10/01 300CNQ. SERIES SCHOTTKY RECTIFIER 300 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 300CNQ. Units 300 A 35 to 45 V 27000 A 150 °C TJ operation Center tap module 0.62 V High purity, high temperature epoxy encapsulation for


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    PD-20481 300CNQ. O-244AB 300CNQ 12-Mar-07 300CNQ035 300CNQ040 300CNQ045 PDF

    transistor CB 945

    Abstract: 8508901YX 8508902YX ELH0101 ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD
    Text: Power Operational Amplifier Features General Description  5A peak 2A continuous output current  10 V ms slew rate  300 kHz power bandwidth  850 mW standby power g 15V supplies  300 pA input bias current  Virtually no crossover distortion  2 ms settling time to 0 01%


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    MIL-STD-883 ELH0101 883are transistor CB 945 8508901YX 8508902YX ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD PDF

    smd diode sod-323 marking code A27

    Abstract: diode smd marking code A27
    Text: DISCRETE SEMICONDUCTORS DAT BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


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    BZX384 OD323 SC-76) MAM387 R76/02/pp11 smd diode sod-323 marking code A27 diode smd marking code A27 PDF

    Untitled

    Abstract: No abstract text available
    Text: LL4148, LL4150, LL4151, LL4448 Surface Mount Silicon Planar Diodes Silizium-Planar-Dioden für die Oberflächenmontage Version 2004-10-01 0.3 0.3 Type Typ 3.5±0.1 Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung


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    LL4148, LL4150, LL4151, LL4448 OD-80 DO-213AA LL4148 LL4150 LL4151 PDF

    1N4148

    Abstract: 1N4150 1N4151 1N4448 1n4148 die
    Text: 1N4148, 1N4150, 1N4151, 1N4448 Silicon Planar Diodes Silizium-Planar-Dioden Version 2004-10-01 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35


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    1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27 1N4148 1N4150 1N4151 1N4148 1N4150 1N4151 1N4448 1n4148 die PDF

    m7 smd diodes NXP

    Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW


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    BZX384 OD323 SC-76) MAM387 R76/02/pp11 m7 smd diodes NXP m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1687-01 11 06 5SLY 12M1700 Fast-Diode Die VRRM =1700 V IF = 300 A Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage


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    12M1700 CH-5600 PDF

    BYV 200

    Abstract: BYV 35 byv ultra Fast Recovery Rectifier
    Text: Lß S A G rlB B ULTRA-FAST-RECOVERY-RECTIFIER DIODES V RRM V Type I I V at I F FA V FSM F (A) (V) (A) (A) rr (ns) T jmax (C) BYV BYV BYV BYV BYV BYV BYV 01-100 01-150 01-200 01-300 01-400 01-500 01-600 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0


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    PDF

    SID01-03

    Abstract: SIE01-01
    Text: —K / Rectifier Diodes —K Power Diodes 9 -2 5 0 A st 150 300 450 600 900 900 1350 SID01-12 1200 1800 ERD51-01 ERD51-03 ERD51-06 ERD51-09 ERD51-12 100 150 300 450 SIE01-01 SIE01-03 SIE01-06 SIE01-09 SIE01-12 ERE51-01 ERE51-03 ERE51-06 ERE51-09 ERE51-12 SIG01-01


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    SID01-01 SID01-03 SID01-06 SID01-09 SIDSIE01-03 SIE01-06 SIE01-09 SIE01-12 ERE51-01 ERE51-03 SIE01-01 PDF

    322CN

    Abstract: No abstract text available
    Text: I , I Preliminary Data Sheet PD-2.550 01/98 IÖ R Rectifier 322CNQ030 In te rn a tio n a l 300 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics lF AV Rectangular D escription/Features 322CNQ030 Units 300 A 30 V 1 0,000 A • Center tap module


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    322CNQ030 The322CNQ030 322CNQ -55to150 -249AA 322CN PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS 74LVC162245A/ 74LVCH162245A 16-bit bus transceiver with direction pin; 300 series termination resistors; 5V Input/Outputs tolerant 3-State Product specification Supersedes data of 1997 Aug 01 IC24 Data Handbook Philips Semiconductors


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    74LVC162245A/ 74LVCH162245A 16-bit 74LVCH162245A PDF

    D240LG40

    Abstract: No abstract text available
    Text: Super Fast Recovery Diodes High frequency rectifying Absolute Maximum Ratings Electrical Characteristics Vf Type No. D5LC20U 40 V rm lo [V ] [A ] 200 400 D5LD2QU 200 D5LC20UR 200 DE5LC20U 200 40 SF5LC20U 400 300 40 D8LC20U 400 20UR 40 D8LD20U 40 01ÖLC20U


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    ITO-220 D120LC40 D200LC40B D240LG40 D240LG40 PDF