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Text: SPK1250 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)200 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.500
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Text: MJH6284 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300
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Text: DA11503008 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)500 V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.6k Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80
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DA11503008
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Text: PMD25K120 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300
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Text: BU931ZP Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300
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BU931ZP
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Text: BU931ZT Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300
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Text: BU931Z Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300
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Text: BU931ZTFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300
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Text: BU931 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300
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Text: BU931ZPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300
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Text: PMD25K150 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300
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Text: BU931ZSM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300
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Text: BU931SM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300
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Text: BU931T Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300
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Text: BU931P Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300
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Text: MJ11028 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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Text: 2SD1909 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)6 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.200
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Text: BU931TFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40# Maximum Operating Temp (øC)150 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300
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Text: BU931RPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.
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Text: 2SD1592 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.3.0k
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Text: MJH6282 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k
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Text: MJH6283 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k
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mj150* darlington
Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35
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2N3055A,
MJ15015,
MJ15016
2N3055,
MJ2955
2N3442
2N3771,
2N3772
2N3773*
2N6609
mj150* darlington
BJT BD139
TIP102 Darlington transistor
MJ31193
npn darlington transistor 200 watts
MJ11029
BJT transistor 400 volts.100 amperes
300 volt 16 ampere transistor
npn darlington transistor 150 watts
mj15004 pnp
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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