300EXH21 Search Results

300EXH21 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
300EXH21		Unknown	The Diode Data Book with Package Outlines 1993		Scan	PDF

300EXH21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
snubber diode Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11	OCR Scan	PDF	SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
500EXH21 Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24 Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that	OCR Scan	PDF	SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX
100EXG11 Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26	OCR Scan	PDF	SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
GTO catalogue Abstract: SG1000EX23 toshiba gto Text: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,	OCR Scan	PDF	1000EX23 GTO catalogue SG1000EX23 toshiba gto
SG600EX21 Abstract: No abstract text available Text: _ * •-> , ;y:; v:^ s v ‘ •‘-V%’ • > * - > ^ * • •"- : v . - . FEATURES 1. 2. 3. 4. Low trigger current Low on-state voltage High peak turn-off current High current and high voltage ratings APPLICATIONS • • • • Uninterruptible power supply	OCR Scan	PDF	SG600R21 SG800R21 SG600EX21 SG800EX21 SG1000R22 SG1200EX21 SG1400EX21 165JJ 84-3-AC SG600EX21
gate turn off thyristors Abstract: 500EXH21 800gxhh21 800exh21 Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that	OCR Scan	PDF	1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21