NTE2543
Abstract: No abstract text available
Text: NTE2543 Silicon NPN Transistor Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
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NTE2543
NTE2543
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FZT857QTA
Abstract: Y1 marking MARKING fzt
Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V IC = 3.5A High Continuous Collector Current Case Material: Molded Plastic. “Green” Molding Compound.
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FZT857
OT223
155mV
FZT957
AEC-Q101
OT223
J-STD-020
DS33177
FZT857QTA
Y1 marking
MARKING fzt
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1A 300V TRANSISTOR
Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
Text: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V
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NTE94
NTE94
200mA,
1A 300V TRANSISTOR
300V transistor npn 2a
300V regulator
TRANSISTOR 187
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A
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FZT857
OT223
155mV
FZT957
AEC-Q101
DS33177
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BD307
Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor
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BU306F/307F
BD306F
BD307F
BU306F
BU307F
BD307
BU306
9v dc motor
BU306F
BU307F
transistor 400v
BD306
300V transistor npn 2a
NPN Transistor 1A 400V
transistor b 40 Ic-5A datasheet
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300V transistor npn 2a
Abstract: 2N5240 voltage regulators 300v dc 300V series regulators 200V transistor npn 2a 300V regulator 2N5240 inchange
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 DESCRIPTION •High Voltage: VCEO SUS = 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and
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2N5240
RBE50
300V transistor npn 2a
2N5240
voltage regulators 300v dc
300V series regulators
200V transistor npn 2a
300V regulator
2N5240 inchange
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300V switching transistor
Abstract: 300V transistor npn 2a FZT857 FZT957 DSA003675
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT857 ISSUE 4 - SEPTEMBER 1997 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps
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OT223
FZT857
FZT957
100ms
300V switching transistor
300V transistor npn 2a
FZT857
FZT957
DSA003675
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FZT857
Abstract: FZT957
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT857 ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps C E
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OT223
FZT857
FZT957
100ms
FZT857
FZT957
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Untitled
Abstract: No abstract text available
Text: , Line. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Power Transistor 2N5240 DESCRIPTION • High Voltage: VCEo(sus)= 300V(Min) • Wide Area of Safe Operation CV APPLICATIONS
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2N5240
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transistor tl 430 c
Abstract: No abstract text available
Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =
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BDY46
transistor tl 430 c
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORM ANCE TRANSISTOR FZT857 ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Am ps continuous collector current, up to 5 Am p peak * VCEO = 300V * Very low saturation voltage * Excellent h FE specified up to 3 Am ps
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OT223
FZT857
FZT957
100ms
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP150 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- I2 J- : V(BR)CEO= 300V(Min.) • Collector-Emitter Saturation Voltage-
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TIP150
O-220C
100mA
250mA
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TRANSISTOR BO 345
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT857 ISSU E 3 -FEBRUARY 1996 O -FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * V c e o -300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps
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OT223
FZT857
-300V
FZT957
TRANSISTOR BO 345
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2SD2017
Abstract: FM20
Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W
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2SD2017
O220F)
2000min
100max
10max
250min
20typ
65typ
150x150x2
100x100x2
2SD2017
FM20
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2SC2023
Abstract: No abstract text available
Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W
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2SC2023
MT-25
300min
30min
10typ
75typ
100x100x2
50x50x2
2SC2023
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ZTX857
Abstract: 300V transistor npn 2a DSA003778
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio
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ZTX857
100mA,
100MHz
250mA,
500mA,
100ms
ZTX857
300V transistor npn 2a
DSA003778
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LB-008
Abstract: lc08a LB 125 transistor Triple Diffused
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
LB-008
lc08a
LB 125 transistor
Triple Diffused
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Untitled
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
T0-220
C35siÃ
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J5603D
Abstract: FJI5603DTU MH 7404 200H FJI5603D
Text: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application • Electronic Ballast Application C Features B • Wide Safe Operating Area • Small Variance in Storage Time • Built-in Free Wheeling Diode
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FJI5603D
FJI5603D
J5603D
FJI5603DTU
MH 7404
200H
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Untitled
Abstract: No abstract text available
Text: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • • High Voltage and High Speed Power Switch Application Electronic Ballast Application C Features • • • B Wide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode
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FJI5603D
FJI5603D
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
KSC5338D/KSC5338DW
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time
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KSC5338D/KSC5338DW
O-220
O-220
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NPN Transistor 10A 400V
Abstract: 2N5663 300V transistor npn 2a LE17
Text: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N5663
100mW/
O-205AA)
NPN Transistor 10A 400V
2N5663
300V transistor npn 2a
LE17
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