303 2170 001 Search Results

303 2170 001 Result Highlights (5)

Part	Manufacturer	Description
68022-170HLF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Double Row, 70 Positions, 2.54 mm (0.100in)Pitch.
51952-170LF	Amphenol Communications Solutions	PwrBlade®, Power Supply Connectors, 3ACP 16S Vertical Header.
54122-109321700LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 32 position, 2.54mm (0.100in) pitch
68602-170HLF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 70 Positions, 2.54 mm (0.100in)Pitch.
68021-704HLF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Double Row, 04 Positions, 2.54 mm (0.100in) Pitch.

303 2170 001 Price and Stock

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Murrelektronik GmbH 7000-19321-7030300 Sensor Cables / Actuator Cables M12 MALE 90 SHIELDED, PVC 12x0,14 shielded black 3m
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303 2170 001 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
atc100B100GT500XT Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010LSR1 MRF21010 atc100B100GT500XT ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi	PDF
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm	PDF
MRF21010 Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking Text: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF21010 MRF21010LR1 MRF21010LSR1 MRF21010LR1 MRF21010 MRF21010LSR1 Vishay Capacitor marking	PDF
MRF21010 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010 MRF21010LR1 MRF21010LSR1	PDF
capacitor 0805 avx Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23 Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to	Original	MRF21010/D MRF21010 capacitor 0805 avx MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23	PDF
J4-89 Abstract: J534 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534	PDF
atc 17-33 Abstract: 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S20010GNR1 MRF6S20010N Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with	Original	MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010NR1 atc 17-33 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S20010GNR1 MRF6S20010N	PDF
MRF21010 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	MRF21010/D MRF21010 MRF21010S MRF21010S	PDF
j3068 Abstract: 1990 1142 Text: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 0, 12/2005 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with	Original	MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 MRF6S20010N j3068 1990 1142	PDF
MRF21010 Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360 Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010/D MRF21010 MRF21010S MRF21010 100B102JW 293D106X9035D2T MRF21010S NI-360	PDF
j438 Abstract: MRF21010 Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	MRF21010/D MRF21010 MRF21010S j438	PDF
Untitled Abstract: No abstract text available Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz	Original	PTFB210801FA PTFB210801FA H-37265-2	PDF
MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B	PDF
PTFB210801 Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz	Original	PTFB210801FA PTFB210801FA H-37265-2 PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT	PDF

MW4IC2230NB Abstract: j631 marking j130 J242 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242	PDF
hatching machine Abstract: A113 AN1955 AN1987 MW4IC2230 MW4IC2230GMBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230NBR1 Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine A113 AN1955 AN1987 MW4IC2230GMBR1	PDF
TO272* APPLICATION Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MW4IC2230 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W−CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 TO272* APPLICATION	PDF
1329a Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 1329a	PDF
EB202 Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF	Original	SG46/D EB202 AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER	PDF
Untitled Abstract: No abstract text available Text: Technical Data Sheet InterferenceHunter Handheld Direction Finding System MA2700A Includes GPS and Electronic Compass Introduction Simplify your interference hunting tasks with the Handheld InterferenceHunter™ from Anritsu Company. This broadband, easy-to-use handheld direction finding antenna system includes everything you need to find the	Original	MA2700A MA2700on MA2700A	PDF
HEP89 Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2 Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The	Original	MC10EP89 MC10EP89 r14525 MC10EP89/D HEP89 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2	PDF
MRF1550 Abstract: MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135 Text: Freescale Semiconductor Selector Guide. Wireless RF Product. SG46/D Rev. 27 10/2004 Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor serves both the wireless infrastructure and subscriber markets. Freescale RF Solutions is the leader in RF technology—today AND tomorrow—and is the answer for developers	Original	SG46/D xx/2004 MRF1550 MMH3101 ar164 uhf amplifier design MRF454 motorola MOTOROLA SELECTION mrf150 MRF247 bts 425 l1 mrf5015 MRF9135	PDF
hep89 Abstract: transistor tt 2170 HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2 Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The	Original	MC10EP89 MC10EP89 r14525 MC10EP89/D hep89 transistor tt 2170 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF

303 2170 001 Search Results

303 2170 001 Result Highlights (5)

303 2170 001 Price and Stock

Murrelektronik GmbH 7000-19321-7030300

303 2170 001 Datasheets Context Search

atc100B100GT500XT

C-XM-99-001-01

MRF21010

MRF21010

capacitor 0805 avx

J4-89

atc 17-33

MRF21010

j3068

MRF21010

j438

Untitled

MRF21010

PTFB210801

MW4IC2230NB

hatching machine

TO272* APPLICATION

1329a

EB202

Untitled

HEP89

MRF1550

hep89

2a258 transistor