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    3052 BOURNS Search Results

    3052 BOURNS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJU3052SDPD-E0#J2 Renesas Electronics Corporation Fast Recovery Diodes, TO-252, /Embossed Tape Visit Renesas Electronics Corporation
    DF3052BF25V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion), FQFP, / Visit Renesas Electronics Corporation
    RJU3052TDPP-EJ#T2 Renesas Electronics Corporation Fast Recovery Diodes, TO-220FP-2L, /Tube Visit Renesas Electronics Corporation
    ISL73052SEHX/SAMPLE Renesas Electronics Corporation 1.5A, Radiation Hardened, Positive, High Voltage LDO, DIE, / Visit Renesas Electronics Corporation
    83052AGI-01LFT Renesas Electronics Corporation 2-Bit,2:1Single-Ended Multiplexer Visit Renesas Electronics Corporation

    3052 BOURNS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cd 4599

    Abstract: 690 lc mercury 845 3050B TISP9110LDMR-S DAD 5 3052 bourns EN1122
    Text: MATERIAL DECLARATION SHEET 8-SOIC Package Type 210 mil Product Line TSP (Transistors & Thyristors) Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP9110LDMR-S


    Original     		PDF TISP9110LDMR-S cd 4599 690 lc mercury 845 3050B TISP9110LDMR-S DAD 5 3052 bourns EN1122

    CR Bourns

    Abstract: EN1122 3050B MS-012AA TISP61089DR-S bourns tisp copper bond wire SIO21 3808-2
    Text: MATERIAL DECLARATION SHEET 8-SOIC Package Type MS-012AA Product Line Compliance Date November 31, 2004 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP61089DR-S


    Original     		PDF MS-012AA) TISP61089DR-S CR Bourns EN1122 3050B MS-012AA TISP61089DR-S bourns tisp copper bond wire SIO21 3808-2

    7196A

    Abstract: M0178 3050B sot23 nd CR Bourns EN1122
    Text: MATERIAL DECLARATION SHEET SOT23-5 Package Type M0-178 AA Product Line Compliance Date September 1st, 2008 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP4C015L1NDR-S


    Original     		PDF OT23-5 M0-178 TISP4C015L1NDR-S 7196A M0178 3050B sot23 nd CR Bourns EN1122

    74016

    Abstract: 690 lc 3050B
    Text: MATERIAL DECLARATION SHEET 3-SIP Long Lead Package Type Product Line TSP (Transistors & Thyristors) Compliance Date November 31, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP7350H3SLL-S


    Original     		PDF TISP7350H3SLL-S 74016 690 lc 3050B

    3050b

    Abstract: TISP7350H3SL-S Bourns Sip IT 8572
    Text: MATERIAL DECLARATION SHEET 3-SIP Package Type Product Line TSP Transistors & Thyristors Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP7350H3SL-S


    Original     		PDF TISP7350H3SL-S 3050b TISP7350H3SL-S Bourns Sip IT 8572

    DAD 5

    Abstract: TO 92 leadframe 3050b TISP4240M3LMFR-S TISP4350H3LM-S
    Text: MATERIAL DECLARATION SHEET Package Type DO-92 Product Line TSP Transistors & Thyristors Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the part number e.g. TISP4350H3LM-S or TISP4240M3LMFR-S.


    Original     		PDF DO-92 TISP4350H3LM-S TISP4240M3LMFR-S. DAD 5 TO 92 leadframe 3050b TISP4240M3LMFR-S

    3050B

    Abstract: TISP4C250H3BJR-S SMB Package
    Text: MATERIAL DECLARATION SHEET SMB Package Type DO-214AA Product Line TSP (Transistors & Thyristors) Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP4C250H3BJR-S.


    Original     		PDF DO-214AA) TISP4C250H3BJR-S. 2002/95/EC 2005/618/EC 3050B TISP4C250H3BJR-S SMB Package

    7196A

    Abstract: 3050b cd 1191 TISP4300M3AJR-S
    Text: MATERIAL DECLARATION SHEET SMA DO-214AC Package Type Product Line TSP (Transistors & Thyristors) Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP4300M3AJR-S.


    Original     		PDF DO-214AC) TISP4300M3AJR-S. 2002/95/EC 2005/618/EC 7196A 3050b cd 1191 TISP4300M3AJR-S

    TRANSISTOR 3052

    Abstract: triac b 978 TO 92 leadframe TO-92 iron 3050B transistor scr ND transistor EPA3050B material declaration transistor
    Text: MATERIAL DECLARATION SHEET Package Type TO-92 Product Line TSP Transistors & Thyristors Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns Transistor, SCR & Triac products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TICP106-S


    Original     		PDF TICP106-S 7440-50DAD TRANSISTOR 3052 triac b 978 TO 92 leadframe TO-92 iron 3050B transistor scr ND transistor EPA3050B material declaration transistor

    SOT93 package

    Abstract: TRANSISTOR 3052 ND transistor 3050B TIP34C-S transistor nd
    Text: MATERIAL DECLARATION SHEET SOT-93 Package Type Product Line TSP Transistors & Thyristors Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns Transistor products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TIP34C-S.


    Original     		PDF OT-93 TIP34C-S. 29690N OT-93 2002/95/EC 2005/618/EC SOT93 package TRANSISTOR 3052 ND transistor 3050B TIP34C-S transistor nd

    "leadframe material" DIP

    Abstract: 690 lc 3050B Y1112L-S 9912 wt 3052 EN1122
    Text: MATERIAL DECLARATION SHEET SOT-82 Package Type Product Line TSP Transistors & Thyristors Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns TISP or Fluoractor products complying with RoHS legislation are identified with a “-S ” suffix in the part number e.g. TISP2180L-S or Y1112L-S.


    Original     		PDF OT-82 TISP2180L-S Y1112L-S. OT-82 2002/95/EC 2005/618/EC "leadframe material" DIP 690 lc 3050B Y1112L-S 9912 wt 3052 EN1122

    TISP2290 BOURNS

    Abstract: TISP2290-S TISP2290-S BOURNS TISP2290 3050B TIP107-S TRANSISTOR 3052 leadframe to-220
    Text: MATERIAL DECLARATION SHEET TO-220 Package Type Product Line TSP Transistors & Thyristors Compliance Date November 30, 2004 RoHS Compliant Yes (-S suffix) MSL N/A Bourns TISP and Transistor products complying with RoHS legislation are identified with a “-S ” suffix in the part number e.g. TISP2290-S or TIP107-S.


    Original     		PDF O-220 TISP2290-S TIP107-S. O-220 2002/95/EC 2005/618/EC TISP2290 BOURNS TISP2290-S BOURNS TISP2290 3050B TIP107-S TRANSISTOR 3052 leadframe to-220

    100B0R5BW

    Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010R1 MRF21010LSR1 MRF21010LSR1 100B0R5BW 100B102JW Transistor J438 100B5R6BW MRF21010

    Transistor J438

    Abstract: MRF21010 100B102JW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010 MRF21010S Transistor J438 100B102JW

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    100B270JCA500X

    Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282

    microstrip

    Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier


    Original     		PDF MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS

    MJD310

    Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
    Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010S

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010

    MRF21010

    Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010 100B102JW 293D106X9035D2T MRF21010S NI-360

    56590653B

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284SR1 56590653B

    j438

    Abstract: MRF21010
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S j438

    C10 PH

    Abstract: 56-590-65-3B 369A-10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284SR1 C10 PH 56-590-65-3B 369A-10