diode 5082-3080
Abstract: 5082-3080 3080 diode
Text: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C
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in5719
Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching
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1N5719,
1N5767,
5082-3xxx/
1N57xx
5968-7182E
5989-3339EN
in5719
DIODE T25
5082-XXXX
5082-3001
1N5719
diode 5082-3077
diode 5082- 3039
5082-3080
1N57xx
1Nxx
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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1N5767
Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers,
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5989-3339EN
1N5767
DIODE T25
in5719
1nxxxx diode
1N5712
1N5719
RS-296-D
digital phase shifters
1N5 diode
5082-XXXX
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1N5767
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features
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1N5719,
1N5767,
IN5767
1N5767
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Untitled
Abstract: No abstract text available
Text: 5082-3080 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.4pò Carrier Lifetime (S)1.3u @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m
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5SDD31H6000
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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31H6000
5SYA1183-00
CH-5600
5SDD31H6000
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nokia 2700 classic circuit diagram
Abstract: ma6541 circuit diagram of nokia 101 Ericsson BBS g4 oac5a OAC5A OPTO22 AD3T transistor ac51 condor power supply circuit diagram nokia ac adapter
Text: PAMUX USER’S GUIDE Form 726-080118 — January, 2008 43044 Business Park Drive, Temecula, CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services: 800-TEK-OPTO (835-6786) or 951-695-3080
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800-321-OPTO
800-832-OPTO
opto22
800-TEK-OPTO
nokia 2700 classic circuit diagram
ma6541
circuit diagram of nokia 101
Ericsson BBS
g4 oac5a
OAC5A OPTO22
AD3T
transistor ac51
condor power supply circuit diagram
nokia ac adapter
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1400 V = 1960 A = 3080 A = 25x103 A = 0.75 V = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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21F1400
5SYA1023-05
21F1400
CH-5600
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nokia mobile jumper setting
Abstract: star delta wiring diagram Allen-Bradley micrologix cable pin Allen Bradley PLC micrologix 1200 Allen-Bradley 1756 DIGITAL INPUT cards Allen Bradley PLC micrologix 1200 wiring diagram power and battery cabinet ericsson delta plc cable pin diagram RS-485 nokia 1200 circuit diagram Allen-Bradley micrologix 1200
Text: SNAP PAC SYSTEM SPECIFICATION GUIDE Form 1696-101018—October 2010 43044 Business Park Drive • Temecula • CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services 800-TEK-OPTO (835-6786) or 951-695-3080
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1696-101018--October
800-321-OPTO
800-832-OPTO
opto22
800-TEK-OPTO
nokia mobile jumper setting
star delta wiring diagram
Allen-Bradley micrologix cable pin
Allen Bradley PLC micrologix 1200
Allen-Bradley 1756 DIGITAL INPUT cards
Allen Bradley PLC micrologix 1200 wiring diagram
power and battery cabinet ericsson
delta plc cable pin diagram RS-485
nokia 1200 circuit diagram
Allen-Bradley micrologix 1200
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LT3080
Abstract: No abstract text available
Text: Electrical Specifications Subject to Change LT3080 Adjustable1.1A Single Resistor Low Dropout Regulator U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Outputs May be Paralleled for Higher Current and Heat Spreading Output Current: 1.1A
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LT3080
300mV
O-220
OT-223
10-Lead
LT1976
LTC3401
LTC3406/LTC3406B
LTC3411
600mA
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Untitled
Abstract: No abstract text available
Text: LT3080 Adjustable1.1A Single Resistor Low Dropout Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n n Outputs May be Paralleled for Higher Current and Heat Spreading Output Current: 1.1A Single Resistor Programs Output Voltage 1% Initial Accuracy of SET Pin Current
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LT3080
100kHz)
350mV
OT-223
O-220
LTC3406/LTC3406B
600mA
LTC3411
10-Lead
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Untitled
Abstract: No abstract text available
Text: InGaAs APD Photo Diode Modules 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified • InGas APD Photodiode • Low Dark Current • High Speed 2GHz • 800nm to 1700nm Response • Miniature Package
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800nm
1700nm
3080-50R
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3080 ic 8 pin
Abstract: LT3080EQ LT3080EDD#PBF LT3080 LT1085 LT1086 LT1764A LT3080EDD t0220 2N39
Text: LT3080 Adjustable1.1A Single Resistor Low Dropout Regulator FEATURES DESCRIPTION n The LT 3080 is a 1.1A low dropout linear regulator that can be paralleled to increase output current or spread heat in surface mounted boards. Architected as a precision current source and voltage follower allows this new regulator
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LT3080
LTC3406/LTC3406B
600mA
LTC3411
10-Lead
3080fb
3080 ic 8 pin
LT3080EQ
LT3080EDD#PBF
LT3080
LT1085
LT1086
LT1764A
LT3080EDD
t0220
2N39
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G1754
Abstract: buz11 equivalent constant current source with 500mA tpo610 LT3080 LT 543 IC detail dd pak ltc Q LT1085 LT1086 LT1764A
Text: LT3080 Adjustable1.1A Single Resistor Low Dropout Regulator FEATURES DESCRIPTION n The LT 3080 is a 1.1A low dropout linear regulator that can be paralleled to increase output current or spread heat in surface mounted boards. Architected as a precision current source and voltage follower allows this new regulator
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LT3080
LTC3406/LTC3406B
600mA
LTC3411
10-Lead
3080fa
G1754
buz11 equivalent
constant current source with 500mA
tpo610
LT3080
LT 543 IC detail
dd pak ltc Q
LT1085
LT1086
LT1764A
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MEX MARKING CODE ST MAKE
Abstract: Transil smc mdx DIODE bfx transil
Text: SM15T Transil Features • Peak pulse power: – 1500 W 10/1000 µs – 10 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■
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SM15T
DO-214AB)
MEX MARKING CODE ST MAKE
Transil smc
mdx DIODE
bfx transil
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CA 3080 E
Abstract: MEX MARKING CODE ST MAKE bex code st MARKING code mfx stmicroelectronics st MGX marking MET ST sm15t36ca SM15T 615t 6v8a
Text: SM15T Transil Features • Peak pulse power: – 1500 W 10/1000 µs – 10 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■
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SM15T
DO-214AB)
CA 3080 E
MEX MARKING CODE ST MAKE
bex code st
MARKING code mfx stmicroelectronics
st MGX
marking MET ST
sm15t36ca
SM15T
615t
6v8a
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CA 3080 E
Abstract: TXV-3080 3080 diode TXB-3080
Text: HEWLETT-PACKARD^ C M PN TS EGE D 444 7 5Ô 4 0 0 0 S 7 7 3 fl H IG H R E L IA B IL IT Y fT L J Ì H E W L E T T ti!K J P A C K A R D P IN A T T E N U A T O R D IO D E S Generic 5082-3080 TX-3080 TXB-3080 TXV-3080 TXVB-3080 T '0 * 7 -l£ ?. .
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MIL-S-19500
TX-3080
TXB-3080
TXV-3080
TXVB-3080
80VPk.
CA 3080 E
3080 diode
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1N SERIES DIODE
Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
1N SERIES DIODE
diode 5082-3080
2000Q
1N5957SERIES
unitrode diode
iN5957
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Untitled
Abstract: No abstract text available
Text: Whp\ HEWLETT mL'liâ PACKARD PIN Diodes Reliability Data 1N5767 5082-3080 5082-3168 5082-3188 D escription Applications For applications requiring component reliability estima tion, Hewlett-Packard provides reliability data for all families of devices. Data is initially com
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1N5767
MIL-S19500
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diode 5082-3080
Abstract: 1N5767 5082-3080 1N5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
diode 5082-3080
5082-3080
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HP 5082-3081
Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Text: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE
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HPND-4165/66Â
1N5719)
1N5767)
curr080,
IN5719
HP 5082-3081
diode 5082-3168
HPND-4165
HP 5082-3168
vhf antenna mtbf
hp 3042
1N5767
5082-3168
diode 5082-3001
5082-3042
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TFK diode
Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)
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S1000
2/1997-0888E
T0126
15A3DIN
TFK diode
diode tfk
TRANSISTOR BC 277
diode s .* tfk
tfk 045
TFK 220
transistor bf 244
76 TFK
244 tfk
diode 12A3
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Untitled
Abstract: No abstract text available
Text: f il h a r r is u i s , . , . . , , « RHRP3070, RHRP3080, RHRP3090, RHRP30100 , . , 30A, 700V - 1000V Hyperfast Diodes Aprii 1995 Package Features • Hyperfast with Soft R ecovery.<65ns JE DEC TQ -220A C • Operating Tem p eratu
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RHRP3070,
RHRP3080,
RHRP3090,
RHRP30100
-220A
RHRP3090
TA49064)
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