gate to drain clamp
Abstract: 30A 44 zener diode gate-drain zener AOT500 8017M
Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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AOT500
AOT500
50E-06
00E-06
00E-05
300mW
Fig16:
gate to drain clamp
30A 44 zener diode
gate-drain zener
8017M
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PDF
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250HMA
Abstract: No abstract text available
Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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AOT500L
AOT500
AOT500
250HMA
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PDF
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AOT500
Abstract: gate to drain clamp
Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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AOT500
AOT500
gate to drain clamp
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PDF
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AOT500
Abstract: gate to drain clamp
Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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AOT500L
AOT500
AOT500
gate to drain clamp
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PDF
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33a zener
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
33a zener
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PDF
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zener 4c3
Abstract: zener gdz zener gdz marking
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
zener 4c3
zener gdz
zener gdz marking
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PDF
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zener 6c2
Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
2012-REV
RB500V-40
zener 6c2
zener 4c3
zener 5c1
marking code 6C8
zener 9A1
zener 9c1
zener 5B6
DIODES 33D
6c2 zener
4C3 zener
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PDF
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GLZ56
Abstract: zener diodes 5.1a 33b 56
Text: GLZ2.0~GLZ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA. • In compliance with EU RoHS 2002/95/EC directives
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Original
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GLZ56
MINI-MELF/LL-34
500mW
2002/95/EC
MIL-STD-750,
GLZ56
zener diodes 5.1a
33b 56
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PDF
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zener 4c3
Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
RB500V-40
zener 4c3
zener 5c1
ZENER CODE 51b
zener 2a7
4C7 marking code
zener 10D
zener 4B7
20D22A
DIODES 33D
marking code 6C8
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PDF
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marking code 6C8
Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
marking code 6C8
zener 5A1
zener 10D
zener 5c1
zener 9c1
DIODES 33D
Marking 4c7
4C7 marking code
zener 4c3
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PDF
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Untitled
Abstract: No abstract text available
Text: Z2SMB6.8 . Z2SMB200 2 W Z2SMB6.8 . Z2SMB200 (2 W) Surface Mount Silicon-Zener Diodes Si-Zener-Dioden für die Oberflächenmontage Version 2013-05-23 Maximum power dissipation Maximale Verlustleistung ± 0.5 2.2± 0.2 2.1± 0.1 5.4 0.15 Type Typ Nominal Z-voltage
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Original
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Z2SMB200
DO-214AA
UL94V-0
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PDF
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BAI59
Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Text: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .
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OCR Scan
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IN4007F.
1N4001F.
IN4007
1N4001
1N5399
1N5391
RF2007
RF2001
BY255
BY251
BAI59
B40 35-10
IN5345B
Diodes In4007
HVR062
IN4007F
RF2007
B40C3700-2200
b40c2000
rf2001
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PDF
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Untitled
Abstract: No abstract text available
Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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AOT502
AOT502
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PDF
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AOT502
Abstract: gate-drain zener 50E05 102-AX
Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
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Original
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AOT502
AOT502
gate-drain zener
50E05
102-AX
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PDF
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zener gdz
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2013-REV
zener gdz
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PDF
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6b2 zener
Abstract: Marking 4c7 Tube 5A6 DIODES 33D
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
6b2 zener
Marking 4c7
Tube 5A6
DIODES 33D
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PDF
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Untitled
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2011/65/EU
MIL-STD-750,
2011-REV
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PDF
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA
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Original
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdz marking
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PDF
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SMZ-75
Abstract: DO-213AB SMZ10 SMZ11 SMZ12 SMZ13 SMZ15 SMZ16 SMZ200
Text: SMZ1 . SMZ200 2 W SMZ1 . SMZ200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2011-10-17 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage
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Original
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SMZ200
DO-213AB
UL94V-0
SMZ-75
DO-213AB
SMZ10
SMZ11
SMZ12
SMZ13
SMZ15
SMZ16
SMZ200
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PDF
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SMZ5.6
Abstract: No abstract text available
Text: SMZ1 . SMZ200 2 W SMZ1 . SMZ200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2012-04-02 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage
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Original
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SMZ200
DO-213AB
UL94V-0
SMZ5.6
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PDF
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Untitled
Abstract: No abstract text available
Text: ZPY1 . ZPY200 1.3 W ZPY1 . ZPY200 (1.3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2014-06-30 Maximum power dissipation Maximale Verlustleistung ±0.1 5.1 -0.1 Type +0.5
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Original
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ZPY200
DO-41
UL94V-0
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PDF
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Untitled
Abstract: No abstract text available
Text: ZPY1 . ZPY200 1.3 W ZPY1 . ZPY200 (1.3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2013-01-29 Maximum power dissipation Maximale Verlustleistung ±0.1 5.1 -0.1 Type +0.5
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Original
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ZPY200
DO-41
UL94V-0
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PDF
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STE70NM50
Abstract: No abstract text available
Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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Original
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STE70NM50
STE70NM50
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PDF
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zener 400v
Abstract: No abstract text available
Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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Original
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STE70NM50
zener 400v
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PDF
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