Untitled
Abstract: No abstract text available
Text: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics
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YG838C03R
O-220F
500ns,
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30A high speed diode
Abstract: No abstract text available
Text: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics
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Original
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YG838C03R
O-220F
500ns,
YG838C04R
30A high speed diode
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PDF
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YG838C04R
Abstract: No abstract text available
Text: YG838C04R 30A (40V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics
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Original
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YG838C04R
O-220F
500ns,
YG838C04R
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PDF
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Untitled
Abstract: No abstract text available
Text: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.
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ISL9R3060G2
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Untitled
Abstract: No abstract text available
Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is
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RURG3060
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Untitled
Abstract: No abstract text available
Text: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current
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ISL9R3060G2
102ns
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG3060CC
RURG3060
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Untitled
Abstract: No abstract text available
Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride
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RHRG3060
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Untitled
Abstract: No abstract text available
Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.
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RURG3060
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F30S60S
Abstract: No abstract text available
Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial
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FFH30S60S
FFH30S60S
F30S60S
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Untitled
Abstract: No abstract text available
Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGA30N120FTD
FGA30N120FTD
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Untitled
Abstract: No abstract text available
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGH30N120FTD
FGH30N120FTD
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Schottky 30A 40v
Abstract: No abstract text available
Text: http://www.fujisemi.com MS838C04 40V/30A FUJI Diode Schottky Barrier Diode Features • Low VF • Super high speed switching • High reliability by planer design Outline Drawings [mm] Connection diagram TFP 838C04 838C04 Applications • High speed power switching
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MS838C04
0V/30A)
838C04
Schottky 30A 40v
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F30S60S
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP30S60S
FFP30S60S
F30S60S
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30A high speed diode
Abstract: TS808C06
Text: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics
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OCR Scan
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TS808C06
500ns,
30A high speed diode
TS808C06
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PDF
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30A high speed diode
Abstract: TS808C04
Text: _ TS808C04 30A SCHOTTKY BARRIER DIODE • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics
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OCR Scan
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TS808C04
500ns,
30A high speed diode
TS808C04
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PDF
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F30S60S
Abstract: FFH30S60STU F30S60 FFH30S60S
Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFH30S60S
FFH30S60S
F30S60S
FFH30S60STU
F30S60
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F30S60S
Abstract: FFP30S60S FFP30S60STU F30S60
Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP30S60S
FFP30S60S
F30S60S
FFP30S60STU
F30S60
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ESAD83M-004
Abstract: No abstract text available
Text: ESAD83M-004 30A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design I Applications High speed power switching ■ Maximum Ratings & Characteristics
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ESAD83M-004
500ns,
ESAD83M-004
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
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PDF
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F30S60S
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP30S60S
FFP30S60S
F30S60S
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C04
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C04
500ns,
25ature
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C04
500ns,
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PDF
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