Untitled
Abstract: No abstract text available
Text: Military EEPROM Products 128Kx8/64Kx16/32Kx32, 55 - 250ns, PGA 30A014-20 D 1 Megabit CMOS EEPROM DPE3232V DESCRIPTION: The DPE3232V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 32K x 32, 64K X 16 or 128K x 8.
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Original
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128Kx8/64Kx16/32Kx32,
250ns,
30A014-20
DPE3232V
DPE3232V
16-bit
32-bit
64-BWDW
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PDF
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DPE32X32XJ3
Abstract: No abstract text available
Text: Military EEPROM Products 128Kx8/64Kx16/32Kx32, 55 - 250ns, PGA 30A014-20 D 1 Megabit CMOS EEPROM DPE32X32XJ3 ADVANCED INFORMATION DESCRIPTION: The DPE32X32XJ3 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 32K x 32, 64K X 16 or 128K x 8.
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Original
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128Kx8/64Kx16/32Kx32,
250ns,
30A014-20
DPE32X32XJ3
DPE32X32XJ3
16-bit
32-bit
64-BWDW
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PDF
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DPE128X32XJ3
Abstract: No abstract text available
Text: 512Kx8/256Kx16/128Kx32, 120 - 250ns, PGA 30A014-25 D 4 Megabit CMOS EEPROM DPE128X32XJ3 ADVANCED INFORMATION DESCRIPTION: The DPE128X32XJ3 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 128K X 32, 256K X 16 or 512K X 8.
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Original
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512Kx8/256Kx16/128Kx32,
250ns,
30A014-25
DPE128X32XJ3
DPE128X32XJ3
16-bit
32-bit
128-BWDW
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PDF
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Untitled
Abstract: No abstract text available
Text: DPS832V Dense-Pac Microsystems, Inc. ^ CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired c e ra m ic su b stra te w ith m a tc h in g th erm al
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OCR Scan
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DPS832V
DPS832V
66-pin
128KX32
256KX32
30A014-13
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PDF
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 1 Megabit UVEPROM M ICROSYSTEM S DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.
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OCR Scan
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DPV3232VA
DPV3232VA
66-pin
32Kx32
250ns
128KX8,
64KX16
275R41S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 Megabit CMOS SRAM D EN SE-PA C DPS3232V M I C R O S Y S Ï li M S DESCRIPTION: The DPS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients. The LCCs are
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OCR Scan
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DPS3232V
66-pin
128Kx32
256Kx32,
DPS3232V
12SKX8,
64KX16
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PDF
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Untitled
Abstract: No abstract text available
Text: DPE832V 8K X 32 CMOS EEPROM VERSAPAC D ESC R IPT IO N : The DPE832V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 8KX32, 16KX16 or 32K X 8. The module is built with four low-power CMOS 8K X 8
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OCR Scan
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DPE832V
DPE832V
8KX32,
16KX16
16-bit
32-bit
32-BWDW
500mV
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PDF
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP MICROSYSTEMS DESCRIPTION: The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Flash E E P R O M (E le c tric a lly In-System Programmable and Erasable ROM memory) module. The module is built with four 128K x 8 FLASH memory
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OCR Scan
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DPZ128X32VT/DPZ128X32VTP
DPZ128X32VT/VTP
DPZ128X32VT
250ns
120mA
30A014-52-T
D1S31
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PDF
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Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. D PV 12832 V 128K X 32 UVEPROM VERSAPAC O D ESC R IPT IO N : The DPV12832V is a 66-pin Pin Grid Array PGA consisting of four 128K X 8 U V EP R O M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients.
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OCR Scan
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DPV12832V
66-pin
200ns
250ns
512KX8,
256KX16
128KX32
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PDF
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Untitled
Abstract: No abstract text available
Text: DPE32X32V-70I-Tl DENSE-PAC 32K X 32 CMOS EEPROM VERSAPAC M i€ R O S Y S î E MS DESCRIPTION: The DPE32X32V-70I-TI is a high-performance Electrically Erasable and Programmable Read Only Memory EEPR O M module to be produced for Ratheon T.l. Systems. The
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OCR Scan
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DPE32X32V-70I-Tl
DPE32X32V-70I-TI
AT28HC256F-70U
SL337
16-bit
32-bit
500mV
30A014-70
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PDF
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 8 Megabit UVEPROM DPV256X32V DESCRIPTION: The DPV256X32V is a 66-pin Pin Grid Array PGA consisting of four 256K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate w ith matched thermal coefficients.
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OCR Scan
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DPV256X32V
DPV256X32V
66-pin
1024KX8,
512KX
256KX32
250ns
125-C
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PDF
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12 SQ 045 JF
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 1 Megabit UVEPROM DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.
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OCR Scan
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DPV3232VA
DPV3232VA
66-pin
250ns
128KX8,
64KX16
32KX32
E75R415
12 SQ 045 JF
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PDF
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32 pin eprom cdi
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 4 M EGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: T he D P Z 128X32V I/V IP is a 4 m egabit C M O S FLA SH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH m em ory devices. The D P Z 1 2 8 X 3 2 V I/V IP can be user
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OCR Scan
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DPZ128X32VI/DPZ128X32VIP
DPZ128X32VI/VIP
DPZ128X32VI/DPZ128X32VIP
250ns
120mA
120ns
150ns
170ns
200ns
32 pin eprom cdi
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PDF
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amd 29f010
Abstract: DP5Z DP5Z12832VA
Text: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM MICROSYSTEMS DP5Z12832VA/DP5Z12832VAP PRELIMINARY DESCRIPTION: The DP5Z12832VA/DP5Z12832VAP is a 4 megabit 5 volt CMOS Flash EEPRO M (Electrically In-System Programmable and Erasable ROM Memory) module. The module is built with four 128K x 8 FLASH
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OCR Scan
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DP5Z12832VA/DP5Z12832VAP
DP5Z12832VA/DP5Z12832VAP
512Kx
256Kx
128Kx32
128Kx32
120ns
120mA
amd 29f010
DP5Z
DP5Z12832VA
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PDF
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ic 4521 function
Abstract: 2BF010 DPZ128X32VI
Text: DEN SE-PAC 'S MICROSYSTEMS 4 MEGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: The D P Z 1 2 8X 32VI/VIP is a 4 m egabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The m odule is b u ilt w ith four 128K x 8 FLASH
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OCR Scan
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DPZ128X32VI
DPZ128X32VIP
DPZ128X32VI/VIP
DPZ128X32VI/DPZ128X32VIP
250ns
120mA
400nA
2BF010
ic 4521 function
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PDF
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twilight
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. DPS3232V 32K X 32 CMOS SRAM VERSAPAC MODULE O DESCRIPTION: The DPS3232V is a 66-pin Pin Grid Array PGA consisting of four 3 2 K X8 SRAM devices in ceramic LCC packages surface mounted on a co-fired ceram ic substrate w ith m atching thermal
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OCR Scan
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DPS3232V
DPS3232V
66-pin
128KX32
256KX32
S3232
100ns
120ns
150ns
twilight
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PDF
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Untitled
Abstract: No abstract text available
Text: DPV12832VA H IGH SPEED 128K X 32 UVEPRO M VERSAPAC Microsystems, Inc. 0 DESCRIPTION: The D PV12832VA is a 66-pin Pin Grid Array PGA consisting of four 128K X 8 U VEPRO M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.
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OCR Scan
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DPV12832VA
DPV12832VA
66-pin
512KX8,
250ns
120ns
150ns
170ns
200ns
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PDF
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DPV12832V
Abstract: do341
Text: □PM Dense-Pac Microsystems. Inc. DPV12832V ^ 128K X 32 UVEPROM VERSAPAC DESCRIPTION: The D P V 1 2 8 3 2 V is a 66-pin Pin Grid Array PGA consisting of four 128K X 8 U V E P R O M devices in ceramic LC C packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients.
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OCR Scan
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DPV12832V
DPV12832V
66-pin
-250ns
reI/09
I/029
I/027
I/028
I/022
30A014-32
do341
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PDF
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we348
Abstract: a2631 al 62
Text: □PM DPE832V Dense-Pac Microsystems, Inc. 8K X 32 CMOS EEPROM VERSAPAC O DESCRIPTION: The DPE832V is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may be organized as 8K X 32, 16K X 16 or 32K X 8. The module is built with four low-power C M O S 8K X 8
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OCR Scan
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DPE832V
DPE832V
16-bit
32-bit
32-BWDW
I/024
I/025
I/026
we348
a2631
al 62
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PDF
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Untitled
Abstract: No abstract text available
Text: □PM DPV3232VA Dense-Pac Microsystems. Inc. 32K X 3 2 UVEPROM VERSAPAC O DESCRIPTION: The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K X 8 UVEPRO M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.
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OCR Scan
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DPV3232VA
DPV3232VA
66-pin
250ns
128KXS,
64KX16
32KX32
30A014-60
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PDF
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 Megabit CMOS FLASH DPZ128X32VA/DPZ128X32VAP M I C R O S Y S T E M S DESCRIPTION: The DPZ128X32VA/VAP is a 4 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH memory devices. The D P Z 128X32VA/VAP can be user
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OCR Scan
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DPZ128X32VA/DPZ128X32VAP
DPZ128X32VA/VAP
128X32VA/VAP
200ns
120mA
400nA
00VA/VAP
Z128X32V
120ns
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PDF
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Untitled
Abstract: No abstract text available
Text: □PM DPZ128X32V Dense-Pac Microsystems, Inc. 128K X 32 FLASH Memory VERSAPAC O P R E L IM IN A R Y DESCRIPTION: The DPZ128X32V is a 128K x 32 FLASH electrically erasable and programmable read only memory module built with four 128K x 8 FLASH memory devices. The module is a 65-pin
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OCR Scan
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DPZ128X32V
DPZ128X32V
65-pin
32-pin
200ns
250ns
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PDF
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Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. DPE3232V O 3 2 K X 3 2 CMOS EEPROM VERSAPAC DESCRIPTION: The D P E3232V is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may be organized as 32K X 32, 64K X 16 or 128K X 8.
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OCR Scan
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DPE3232V
E3232V
DPE3232V
16-bit
32-bit
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PDF
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1225 c
Abstract: No abstract text available
Text: Dense-Pac Microsystems, Inc. T DPVt 2832V ^ 128K X 32 UVEPROM VERSAPAC D E SC R IPT IO N : The DPV12832V is a 66-pin Pin Grid Array PG A consisting of four 128K X 8 U V E P R O M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients.
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OCR Scan
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DPV12832V
66-pin
-i-85
512KX8,
256KX16
128KX32
30A014-32
1225 c
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PDF
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