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    30A16 Search Results

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    30A16 Price and Stock

    Amphenol Communications Solutions RJMG2330A1610ER

    RJMAG 1000 BASE-T STACK SINGLE U
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    DigiKey RJMG2330A1610ER Tray 607 1
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    Newark RJMG2330A1610ER Bulk 5,600
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    PEI Genesis GTC030A16-7S-RDS

    GT 3C 2#16, 1#8 SKT RECP
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    PEI Genesis GTC030A16-7SW-RDS

    GT 3C 2#16, 1#8 SKT RECP
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    PEI Genesis GTC030A16-7SX-RDS

    GT 3C 2#16, 1#8 SKT RECP
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    DigiKey GTC030A16-7SX-RDS Bulk 12
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    PEI Genesis GTC030A16-7SY-RDS

    GT 3C 2#16, 1#8 SKT RECP
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    30A16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2Mx32, 50 - 80ns, TSTACK 30A165-15 A 256 Megabit CMOS DRAM DPnnD8MX32RY5 PRELIMINARY DESCRIPTION: The DPnnD8MX32RY5 is the 8 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg


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    PDF 2Mx32, 30A165-15 DPnnD8MX32RY5 DPnnD8MX32RY5 DQ0-DQ15, DQ16-DQ31.

    DP5Z4MX16PA3

    Abstract: DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3
    Text: 4Mx16, 120 - 200ns, STACK/PGA 30A161-04 B 64 Megabit FLASH EEPROM DP5Z4MX16Pn3 PRELIMINARY DP5Z4MX16PY3 DESCRIPTION: The DP5Z4MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip


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    PDF 4Mx16, 200ns, 30A161-04 DP5Z4MX16Pn3 DP5Z4MX16PY3 50-pin 64-Megabits DP5Z4MX16Pn3 DP5Z4MX16PA3 DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3

    Memory

    Abstract: No abstract text available
    Text: 512Kx8/256Kx16/128Kx32, 15 - 35ns, 30A167-00 A Surface Mount FTE32KX32XP/XHP 1 Megabit CMOS EEPROM DESCRIPTION: The FTE32KX32XP/XHP is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organised as 32K X 32, 64K X 16 or 128K


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    PDF 512Kx8/256Kx16/128Kx32, 30A167-00 FTE32KX32XP/XHP FTE32KX32XP/XHP 16-bit 32-bit 64-BWDW Memory

    Untitled

    Abstract: No abstract text available
    Text: 512Kx8/256Kx16/128Kx32, 150 - 250ns, PGA 30A169-00 A 4 Megabit 5 Volt CMOS FLASH EEPROM DPZ128X32XP/XHP DESCRIPTION: The DPZ128X32XP/XHP is a 4 megabit 5 Volt only CMOS Flash EEPROM Electrically In-System Programmable and Erasable ROM memory module. The module is built with


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    PDF 512Kx8/256Kx16/128Kx32, 250ns, 30A169-00 DPZ128X32XP/XHP DPZ128X32XP/XHP 150ns 120mA I/O14,

    DP5Z4MW16PA3

    Abstract: DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3
    Text: 4Mx16, 120 - 200ns, STACK/PGA 30A161-24 A 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 PRELIMINARY DP5Z4MW16PY3 DESCRIPTION: The DP5Z4MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip


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    PDF 4Mx16, 200ns, 30A161-24 DP5Z4MW16Pn3 DP5Z4MW16PY3 50-pin 64-Megabits DP5Z4MW16Pn3 DP5Z4MW16PA3 DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3

    Memory

    Abstract: No abstract text available
    Text: 512Kx8/256Kx16/128Kx32, 30A167-00 A 15 - 35ns, Surface Mount FTS128KX32XP 4 Megabit 5 Volt CMOS SRAM DESCRIPTION: The FTS128KX32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4


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    PDF 512Kx8/256Kx16/128Kx32, 30A167-00 FTS128KX32XP FTS128KX32XP/XHP 68-pin FTS128KX32XP/XHP Memory

    STATIC RAM 256KX16

    Abstract: "Video RAM" KM4216C528 Dynamic RAM icc3 KM4216C258 256KX16 512Kx1
    Text: 16Mx36, 50 - 70ns, TSTACK 30A165-33 B M-Densus High Density Memory Device 8 Megabit CMOS VIDEO RAM DPO512X16MGY5-CM PRELIMINARY DESCRIPTION: The DPO512X16MGY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and innovative space saving SOP stacking technology.


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    PDF 16Mx36, 30A165-33 DPO512X16MGY5-CM DPO512X16MGY5-CM 512Kx16 256Kx16 50/15ransition STATIC RAM 256KX16 "Video RAM" KM4216C528 Dynamic RAM icc3 KM4216C258 512Kx1

    DRAM 8Mx32 tsop

    Abstract: 1431 transistor equivalent Dense-Pac Microsystems Dynamic RAM 8MX32
    Text: 8Mx32, 50 - 70ns, TSTACK 30A165-25 A 256 Megabit CMOS DRAM DPnnD8MX32RKY5 PRELIMINARY DESCRIPTION: The DPnnD8MX32RKY5 is the 8 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four


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    PDF 8Mx32, 30A165-25 DPnnD8MX32RKY5 DPnnD8MX32RKY5 DRAM 8Mx32 tsop 1431 transistor equivalent Dense-Pac Microsystems Dynamic RAM 8MX32

    DP5Z1MM16PH3

    Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
    Text: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’


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    PDF 1Mx16, 200ns, 30A162-21 DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 50-pin 16-Megabits DP5Z1MM16PY DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 DP5Z1MM16PH3 DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3

    DP5Z2ME16PA3

    Abstract: DP5Z2ME16PH3 DP5Z2ME16PI3 DP5Z2ME16PJ3 DP5Z2ME16PY
    Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2ME16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing


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    PDF 2Mx16, 200ns, 30A161-02 DP5Z2ME16Pn3 50-pin 32-Megabits DP5Z2ME16PY DP5Z2ME16Pn3 30A161-42 DP5Z2ME16PA3 DP5Z2ME16PH3 DP5Z2ME16PI3 DP5Z2ME16PJ3 DP5Z2ME16PY

    DP5Z2MW16PA3

    Abstract: DP5Z2MW16PH3 DP5Z2MW16PI3 DP5Z2MW16PJ3 DP5Z2MW16PY3
    Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-22 A 32 Megabit FLASH EEPROM DP5Z2MW16Pn3 PRELIMINARY DESCRIPTION: SLCC Stack The DP5Z2MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip


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    PDF 2Mx16, 200ns, 30A161-22 DP5Z2MW16Pn3 50-pin 64-Megabits DP5Z2MW16Pn3 DP5Z2MW16PA3 DP5Z2MW16PH3 DP5Z2MW16PI3 DP5Z2MW16PJ3 DP5Z2MW16PY3

    DPD8MX36RKY5

    Abstract: No abstract text available
    Text: 8Mx36, 50 - 70ns, TSTACK 30A165-26 A 256 Megabit CMOS DRAM w/ Parity DPD8MX36RKY5 PRELIMINARY DESCRIPTION: The DPD8MX36RKY5 is the 8 Meg x 36 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg x 16 and


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    PDF 8Mx36, 30A165-26 DPD8MX36RKY5 DPD8MX36RKY5

    32MX72

    Abstract: No abstract text available
    Text: 32Mx72, 10-12ns, DIMM 30A166-20 1 256 Megabyte SDRAM DIMM DPSD32MS72RW5 PIN-OUT DIAGRAM DESCRIPTION: The DPSD32MS72RW5 is a 32Mx72 SDRAM buffered DIMM consisting of thirty-six 64Mbit SDRAM devices configured as 18 stacked 128Mbit modules in a 2-bank architecture. 8-bit ECC is provided for error protection. All control lines are buffered


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    PDF 32Mx72, 10-12ns, 30A166-20 DPSD32MS72RW5 DPSD32MS72RW5 32Mx72 64Mbit 128Mbit 100MHz DPSD32MS72RWAuto

    DP5Z2MK16PA3

    Abstract: DP5Z2MK16PH3 DP5Z2MK16PI3 DP5Z2MK16PJ3 DP5Z2MK16PY
    Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2MK16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MK16n3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing


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    PDF 2Mx16, 200ns, 30A161-02 DP5Z2MK16Pn3 DP5Z2MK16n3 50-pin 32-Megabits DP5Z2MK16PY DP5Z2MK16Pn3 30A161-32 DP5Z2MK16PA3 DP5Z2MK16PH3 DP5Z2MK16PI3 DP5Z2MK16PJ3 DP5Z2MK16PY

    edo ram 8Mx16

    Abstract: No abstract text available
    Text: 8Mx16, 50 - 70ns, TSTACK 30A165-12 A 128 Megabit CMOS DRAM DPnnD8MX16RY5 PRELIMINARY DESCRIPTION: The DPnnD8MX16RY5 is the 8 Meg x 16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 4 Meg x 16


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    PDF 8Mx16, 30A165-12 DPnnD8MX16RY5 DPnnD8MX16RY5 DQ8-DQ15. edo ram 8Mx16

    Untitled

    Abstract: No abstract text available
    Text: 2Mx32, 50 - 80ns, TSTACK 30A164-15 1A 64 Megabit CMOS DRAM DPnnD2MX32PY5 PRELIMINARY DESCRIPTION: The DPnnD2MX32PY5 is the 2 Meg x 32 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 1 Meg x 16


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    PDF 2Mx32, 30A164-15 DPnnD2MX32PY5 DPnnD2MX32PY5 DQ0-DQ15, DQ16-DQ31.

    Untitled

    Abstract: No abstract text available
    Text: 2Mx16, 50 - 70ns, TSTACK 30A164-12 3 32 Megabit CMOS DRAM DPnnD2MX16PY5 PRELIMINARY DESCRIPTION: The DPnnD2MX16PY5 is the 2 Meg x 16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 1 Meg x 16


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    PDF 2Mx16, 30A164-12 DPnnD2MX16PY5 DPnnD2MX16PY5 DQ8-DQ15.

    1F7 1f8 1f9

    Abstract: S068 TRANSISTOR 2A1 DA16 M35062 M35062-001SP M35062-XXXSP HSZ5 1a3 capacitor
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M35062-XXXSP 1F7 1f8 1f9 S068 TRANSISTOR 2A1 DA16 M35062 M35062-001SP HSZ5 1a3 capacitor

    PTC SCK 055

    Abstract: PTC SCK 052 30116 4116 2N M35061-002SP PAL 007 PAL 007 B PAL 007 c PAL 007 E M35061-XXXFP
    Text: MITSUBISHI MICROCOMPUTERS M35061-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION M35061-XXXSP/FP is CATV screen display control IC which can display 40 horizontal ✕ 17 (vertical). It has built-in SYRAM which can be used with character ROM.


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    PDF M35061-XXXSP/FP M35061-XXXSP/FP M35061-XXXSP 32-pin M35061-XXXFP M35061-002SP/FP M35061-XXXSP/FP, PTC SCK 055 PTC SCK 052 30116 4116 2N M35061-002SP PAL 007 PAL 007 B PAL 007 c PAL 007 E

    PTC SCK 055

    Abstract: scrolling led display circuit cr 29c PAL 007 PAL 007 B PTC SCK 052 S057 TH sck 083 M35062 M35062-001SP
    Text: MITSUBISHI MICROCOMPUTERS M35062-XXXSP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION M35062-XXXSP is CATV screen display control IC which can display 40 horizontal x 17 (vertical). It has built-in SYRAM which can be used with character ROM.


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    PDF M35062-XXXSP M35062-XXXSP 32-pin M35062-001SP M35062-XXXSP, PTC SCK 055 scrolling led display circuit cr 29c PAL 007 PAL 007 B PTC SCK 052 S057 TH sck 083 M35062

    Untitled

    Abstract: No abstract text available
    Text: 3 Megabit CMOS SRAM DENSE-PAC DPS128X24XP/XHP MICROSYSTEMS DESCRIPTION: The DPS128X24XP/XHP is a 68-pin surface mount module consisting of three 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4 substrate. The module is available with either "J"-Leads or


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    PDF DPS128X24XP/XHP DPS128X24XP/XHP 68-pin A0-A16 I/023 098X24XP/XHP 30A167-20

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 M I C R O S Y S T I:. M S PRELIM IN A R Y D ESC RIPTIO N : The DP5Z2MX16Nn3 "S LC C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, " J " leaded, gullwing


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    PDF DP5Z2MX16Nn3 50-pin 32-Megabits DP5Z2MX16Nn3 120ns 200ns 30A162-04

    Untitled

    Abstract: No abstract text available
    Text: Intel PCI 00 Approved 512 & 256 Megabyte Registered DIMM'S using Dense-Pac's Patented Stacked Memory devices for use in Intel® 440BX based Chip Set Nightshade & NightLite motherboards See Intel’s web page for more information:


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    PDF 440BX om/support/motherboards/server/n440bx/nbx DPSD32MR72RW5-PC100 30A166-30 DPSD32MR72RW 5-PC100 PC100

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 128 Megabit CMOS DRAM DPnnD8MX16RY5 VI i C R O S Y S I’ K M s PRELIMINARY DESCRIPTION: The DPnnD8MX16RY5 isthe8Megx16 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 4 Meg x 16


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    PDF DPnnD8MX16RY5 DPnnD8MX16RY5 isthe8Megx16 30A165-12