Untitled
Abstract: No abstract text available
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,
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HUF76107D3,
HUF76107D3S
HUF76
107D3,
107D3
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HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 76107P TC298
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF7 6107P 3 /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel,
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HUF76107P3
6107P
O-220AB
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
76107P
TC298
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Untitled
Abstract: No abstract text available
Text: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses
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STSJ100NHS3LL
STSJ100NHS3LL
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Untitled
Abstract: No abstract text available
Text: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate
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RS1E200GN
R1102A
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JESD97
Abstract: STSJ100NHS3LL
Text: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STSJ100NHS3LL
JESD97
STSJ100NHS3LL
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JESD97
Abstract: STS20NHS3LL
Text: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STS20NHS3LL
JESD97
STS20NHS3LL
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JESD97
Abstract: STS20NHS3LL
Text: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STS20NHS3LL
JESD97
STS20NHS3LL
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Untitled
Abstract: No abstract text available
Text: FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0mΩ Features General Description ̈ Max rDS on = 4.0mΩ at VGS = 10V, ID = 20A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
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FDS8812NZ
FDS8812NZ
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K800
Abstract: JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
K800
JESD97
STK800
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K800
Abstract: JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
K800
JESD97
STK800
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JESD97
Abstract: K800 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
JESD97
K800
STK800
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SSD9435
Abstract: No abstract text available
Text: SSD9435 -20A, -30V,RDS ON 50m Ω P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient
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SSD9435
O-252
SSD9435
O-252
01-Jun-2002
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Untitled
Abstract: No abstract text available
Text: RS1E200AH Nch 30V 20A Power MOSFET Datasheet l Outline VDSS 30V RDS on (Max.) 5.2mΩ ID ±20A PD 3W HSOP8 l Inner circuit l Features 1) Low on - resistance.
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RS1E200AH
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SF20SC3L
Abstract: No abstract text available
Text: SHINDENGEN Schottky Rectifiers SBD SF20SC3L Dual OUTLINE DIMENSIONS Case : FTO-220 Unit : mm 30V 20A FEATURES Tj150 Low VF = 0.45V PRRSM avalanche guaranteed Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION Switching power supply DC/DC converter
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SF20SC3L
FTO-220
Tj150
SF20SC3L
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HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
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PDF
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FDS8812NZ
Abstract: No abstract text available
Text: FDS8812NZ N-Channel PowerTrench tm MOSFET 30V, 20A, 4.0mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
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FDS8812NZ
FDS8812NZ
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TC298
Abstract: No abstract text available
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using
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HUF76107P3
TC298
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20FWJ2CZ47M
Abstract: No abstract text available
Text: 20FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2CZ47M SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage: VFM ≤ 0.47V • Repetitive Peak Reverse Voltage: VRRM = 30V • Average Output Rectified Current: IO = 20A
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20FWJ2CZ47M
20FWJ2CZ47M
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Untitled
Abstract: No abstract text available
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
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mosfet 20a 300v
Abstract: AM3921P 2SK2473-01
Text: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2473-01
mosfet 20a 300v
AM3921P
2SK2473-01
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N-Channel MOSFET 200v
Abstract: MOSFET 200v 20A n.channel
Text: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2518-01MR
N-Channel MOSFET 200v
MOSFET 200v 20A n.channel
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76129d
Abstract: MOSFET 76129D AN9321 AN9322 HUF76129D3 HUF76129D3S HUF76129D3ST TB334 KP-57 m65e
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
1999ducts
76129d
MOSFET 76129D
AN9321
AN9322
HUF76129D3
HUF76129D3S
HUF76129D3ST
TB334
KP-57
m65e
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76129d
Abstract: No abstract text available
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
76129d
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PDF
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Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
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HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
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