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    United Chemi-Con Inc E81D630VGS392MA30N

    CAP ALUM 3900UF 63V RADIAL
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    United Chemi-Con Inc E82D630VGS123MA63U

    CAP ALUM SNAP-IN GEN PUR 85C
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    United Chemi-Con Inc E82D630VGS742AA50U

    CAP ALUM SNAP-IN GEN PUR 85C
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    United Chemi-Con Inc E81D630VGS222MR25N

    Aluminum Electrolytic Capacitors - Snap In 2200uF 63 Volt
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    United Chemi-Con Inc E81D630VGS822MA40N

    Aluminum Electrolytic Capacitors - Snap In 8200uF 63 Volt
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    30VGS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SPN4850

    Abstract: No abstract text available
    Text: SPN4850 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4850 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original
    SPN4850 SPN4850 PDF

    spn60

    Abstract: smps 1mhz 60v 60V SMPS 48V 10A SMPS spn6099
    Text: SPN6099 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6099 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original
    SPN6099 SPN6099 0V/80A 0V/20A 0V/10A spn60 smps 1mhz 60v 60V SMPS 48V 10A SMPS PDF

    43a Hall Effect Magnetic Sensors

    Abstract: two transistor forward 43a hall sensor 43a Hall effect pin out ic ir2110 IR2110 equivalent 200khz transformer AN IR2110 ir2110 buck in4148 zener diode
    Text: Application Note AN-1041 Using the IR1176 Synchronous Rectifier Driver IC in DC-DC Converters By Xiao-chang Cheng and Edgar Abdoulin 1. Introduction .1 2. IR1176 Block Diagram .2


    Original
    AN-1041 IR1176 IR1175. 43a Hall Effect Magnetic Sensors two transistor forward 43a hall sensor 43a Hall effect pin out ic ir2110 IR2110 equivalent 200khz transformer AN IR2110 ir2110 buck in4148 zener diode PDF