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    3184* INTEL Search Results

    3184* INTEL Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    EN80C188XL-20 Rochester Electronics LLC 80C188XL - MPU Intel 186 CISC 16-Bit Visit Rochester Electronics LLC Buy
    7M3-184 Coilcraft Inc Variable Inductor, 135uH Min, 225uH Max, Ferrite-Core, Shielded, 3030, DIP-5 Visit Coilcraft Inc

    3184* INTEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR  Technical Data  Data Sheet 3184, Rev. A  N N       •      ••    ••     •       ••


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR  Technical Data  Data Sheet 3184, Rev.    N N     •      ••    ••     •       ••


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    DB-226

    Abstract: No abstract text available
    Text: Ordering number:ENN3184A NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Ultrasmall-sized package permitting the 2SC4432applied sets to be made small and slim.


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    ENN3184A 2SC4432 2SC4432applied 2018B 2SC4432] DB-226 PDF

    transistor d2001

    Abstract: 2SC4432 ITR06895 ITR06896 ITR06897 ITR06898 d2001
    Text: Ordering number:ENN3184A NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Ultrasmall-sized package permitting the 2SC4432applied sets to be made small and slim.


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    ENN3184A 2SC4432 2SC4432applied 2018B 2SC4432] transistor d2001 2SC4432 ITR06895 ITR06896 ITR06897 ITR06898 d2001 PDF

    2SC4432

    Abstract: No abstract text available
    Text: Ordering number:EN3184 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Very small-sized package permitting the 2SC4432applied sets to be made small and slim.


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    EN3184 2SC4432 2SC4432applied 2018B 2SC4432] 2SC4432 PDF

    EN3553

    Abstract: 2SC4432 2SC4433 D2598
    Text: Ordering number:EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433] 2.2


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    EN3553 2SC4433 100MHz) 750MHz 2SC4433] EN3553 2SC4432 2SC4433 D2598 PDF

    PM50RHA120

    Abstract: Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200
    Text: MITSUBISHI INTELLIGENT POWER MODULES PM50RHA120 FLAT-BASE TYPE INSULATED PACKAGE PM 50RHA120 • 3 0 5OA, 1200V Current-sense IGBT type inverter • M onolithic gate drive & protection logic • Detection, protection & statusincication circuits fo r over-current, short-circuit,


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    PM50RHA120 E80276 E80271 INA120 PM50RHA120 Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: W fip l mLftm HEW LETT PACKARD Four Character 6.9 mm 0.27 inch Intelligent 5 x 7 Alphanumeric Displays Technical Data HDLX-3416 Series Features • Smart Alphanumeric Display Built-in RAM, ASCII Decoder, and LED Drive Circuitry • Softw are Controlled Dimming and Blanking


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    HDLX-3416 HDLX-3416 PDF

    4 DIGIT LED DISPLAY .37 11 pins

    Abstract: 2416 Display
    Text: H Four Character 6.9 mm 0.27 inch Intelligent 5 x 7 Alphanumeric Displays Technical Data HDLX-3416 Series Features Description • Smart Alphanumeric Display Built-in RAM, ASCII Decoder, and LED Drive Circuitry • Software Controlled Dimming and Blanking


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    HDLX-3416 HDLX-3416. 4 DIGIT LED DISPLAY .37 11 pins 2416 Display PDF

    Realtek 1283

    Abstract: RT8019AS rt8019 101583 data Realtek 1283 EZ80 AN 6752 rtl8019as CS8900A RM0008 RTL8019AS applications note
    Text: Technical Article Configuring an Optimal TCP/IP Stack TA000205-0404 Introduction The ZiLOG TCP/IP Software Suite ZTP supports a large number of Internet protocols. Many applications do not require all of these protocols. This Technical Article explains how to generate an appropriate


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    TA000205-0404 eZ80F91 Realtek 1283 RT8019AS rt8019 101583 data Realtek 1283 EZ80 AN 6752 rtl8019as CS8900A RM0008 RTL8019AS applications note PDF

    FOD3184

    Abstract: FOD3184S FOD3184SDV IEC60747-5 FOD3184SD FOD3184SV FOD3184TSV FOD3184TV FOD3184V IEC60747-5-2
    Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 35kV/µs ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection Guaranteed operating temperature range of -40°C to


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    FOD3184 210ns 250kHz FOD3184 FOD3184S FOD3184SDV IEC60747-5 FOD3184SD FOD3184SV FOD3184TSV FOD3184TV FOD3184V IEC60747-5-2 PDF

    HB54A5129F1

    Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
    Text: HB54A5129F1-A75B/B75B/10B 512 MB Registered DDR SDRAM DIMM 64-Mword x 72-bit, 1-Bank Module 18 pcs of 64 M × 4 Components E0090H20 (Ver. 2.0) Preliminary Mar. 30, 2001 Description The HB54A5129F1 is a 64M × 72 × 1-bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces


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    HB54A5129F1-A75B/B75B/10B 64-Mword 72-bit, E0090H20 HB54A5129F1 256-Mbit HM5425401BTT) HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT PDF

    Ferroxcube 3C8

    Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
    Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive


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    U-127 UC3724/UC3725, Ferroxcube 3C8 U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note PDF

    Untitled

    Abstract: No abstract text available
    Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of


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    FOD3184 50kV/Â 210ns 250kHz FOD3184 PDF

    FOD3184

    Abstract: FOD31 igbt for plasma tv FOD3184SDV FOD3184TV igbt display plasma IGBT gate driver IGBT DRIVER application note IGBT Gate Drive Optocoupler FOD3184S
    Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of


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    FOD3184 210ns 250kHz FOD3184 FOD31 igbt for plasma tv FOD3184SDV FOD3184TV igbt display plasma IGBT gate driver IGBT DRIVER application note IGBT Gate Drive Optocoupler FOD3184S PDF

    Untitled

    Abstract: No abstract text available
    Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of


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    FOD3184 50kV/Â 210ns 250kHz PDF

    HB54A5129F1U

    Abstract: HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


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    512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) M01E0107 E0191H30 HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT PDF

    HB54A5129F1

    Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
    Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


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    512MB HB54A5129F1-A75B/B75B/10B HB54A5129F1 256Mbits HM5425401BTT) M01E0107 E0090H40 HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


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    512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) M01E0107 E0191H20 PDF

    Untitled

    Abstract: No abstract text available
    Text: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention


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    51C256HL 51C256HL-15 51C256HL-20 51C256HL PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


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    512MB HB54A5129F1-A75B/B75B/10B HB54A5129F1 256Mbits HM5425401BTT) M01E0107 E0090H30 PDF

    HB54A5129F1U-10B

    Abstract: HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT HB54A5129F1U
    Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in


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    512MB HB54A5129F1U-A75B/B75B/10B HB54A5129F1U 256Mbits HM5425401BTT) E0191H10 HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT PDF

    LVDS rsds gamma xga color

    Abstract: vh31 VL57 LVDS rsds gamma VH29 Mil Electronics vh10 VH46
    Text: FPD33584 FPD33584 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications Literature Number: SNOSA12A FPD33584 October 21, 2011 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA


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    FPD33584 FPD33584 SNOSA12A 18-bit LVDS rsds gamma xga color vh31 VL57 LVDS rsds gamma VH29 Mil Electronics vh10 VH46 PDF

    VH29

    Abstract: VH34 VL61 RH63 VL41 PD-176 RL61
    Text: OBSOLETE FPD33584 www.ti.com SNOSA12B – JANUARY 2003 – REVISED APRIL 2013 FPD33584 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications Check for Samples: FPD33584 FEATURES DESCRIPTION •


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    FPD33584 SNOSA12B FPD33584 85MHz 70MHz S6C0666 18-Bit VH29 VH34 VL61 RH63 VL41 PD-176 RL61 PDF