2SJ230
Abstract: No abstract text available
Text: Ordering number : EN3815 SANYO Semiconductors DATA SHEET 2SJ230 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3815
2SJ230
2SJ230]
2SJ230
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2SJ232
Abstract: No abstract text available
Text: Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3817
2SJ232
2SJ232]
2SJ232
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2SJ233
Abstract: No abstract text available
Text: Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3818
2SJ233
2SJ233]
2SJ233
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2SJ230
Abstract: No abstract text available
Text: Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3815
2SJ230
2SJ230]
2SJ230
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2SJ229
Abstract: No abstract text available
Text: Ordering number:EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3814
2SJ229
2SJ229]
2SJ229
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2SJ229
Abstract: No abstract text available
Text: Ordering number : EN3814 SANYO Semiconductors DATA SHEET 2SJ229 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3814
2SJ229
2SJ229]
2SJ229
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2SJ227
Abstract: 2085A EN3812
Text: Ordering number:EN3812 P-Channel Silicon MOSFET 2SJ227 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3812
2SJ227
2SJ227]
2SJ227
2085A
EN3812
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2SJ233
Abstract: No abstract text available
Text: Ordering number : EN3818 SANYO Semiconductors DATA SHEET 2SJ233 P-Channel Silicon MOSFET Ultrahigh Speed Switching Applications Package Dimensions Features unit:mm 2085A • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3818
2SJ233
2SJ233]
2SJ233
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2SJ227
Abstract: No abstract text available
Text: Ordering number:EN3812 P-Channel Silicon MOSFET 2SJ227 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3812
2SJ227
2SJ227]
2SJ227
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2SJ232
Abstract: No abstract text available
Text: Ordering number : EN3817 SANYO Semiconductors DATA SHEET 2SJ232 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3817
2SJ232
2SJ232]
2SJ232
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Untitled
Abstract: No abstract text available
Text: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SJ232
--10V
--600mA
--20V
s----20V
31893MH
A8-7974
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Untitled
Abstract: No abstract text available
Text: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C
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2SJ230
--10V
--20V
31893MH
A8-7975
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PDF
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2SJ229
Abstract: No abstract text available
Text: O rdering num ber: EN 3 8 1 4 _ 2SJ229 No.3814 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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2SJ229
atTa-25Â
2SJ229
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PDF
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Vgs2,0v
Abstract: 2SJ230
Text: Ordering number:EN3815 -, No.3815 _ 2SJ230 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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OCR Scan
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EN3815
2SJ230
Vgs2,0v
2SJ230
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ229 LD L o w D rive S eries V Dss = 6 0 V 2085 P Channel Power M OSFET 3814 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SJ229
31893MH
A8-7975
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ227 LD L o w D riv e S e rie s VDSs = 3 0 V 2085 P Channel Power M OSFET 3 8 12 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C
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2SJ227
31893MH
A8-7975
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ233 LD L o w D riv e S e rie s 2085 VDs s = 1 0 0 V P Channel Power M OSFET E 3818 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SJ233
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2SJ232
Abstract: EN3817
Text: Ordering num ber:E N 3 8 1 7 _ 2SJ232 No.3817 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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EN3817
2SJ232
2SJ232
EN3817
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PDF
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2SJ233
Abstract: l0555
Text: Ordering num ber:EN3818 SANYO 2SJ233 No.3818 P-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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2SJ233
2SJ233
l0555
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PDF
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