Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Model Number TYPE 31D-1E 12N1 Parameters Test Conditions Units 31D-1E12N1 31D-1E22N1 31D-1E32N1 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 70 400 1500 Coil Resistance VDC-Max 3.6 9.6
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31D-1E
31D-1E12N1
31D-1E22N1
31D-1E32N1
106Cyc.
Pin9-14)
Pin1-13)
Pin2-14)
31D-1E12N1
31D-1E22N1
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D475
Abstract: 31DQ 31DQ03 31DQ04 C-16 sapk 31DQ05
Text: PD-2.304 International S Rectifier 31 dqo 3 31 dqo 4 SCHOTTKY RECTIFIER 3.3 Amp Description/Features Major Rating» and Characteristics Characteristics 31D Q . Units ' f AV Rectan9ular waveform 3.3 A 30/40 V lFSH tp-5yssine 470 A VF 0.55 V -40to125 °C
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31DQ09
31DQ10
D475
31DQ
31DQ03
31DQ04
C-16
sapk
31DQ05
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74605
Abstract: YS002 74604 sn200062
Text: 6381725 TEXAS INSTR CAS I C / M E M O R Y 31D 74602 SN200060, SN200061, SN200062 SN200D63, SN200064, SN72501 THERMAL RESISTANCE MEASUREMENT DEVICES D2927, SEPTEMBER 1987 * Isolated Pow er Resistor Network • Internal Therm al Sensing Device S N 2 0 0 0 6 0 . . . D PACKAGE
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SN200060,
SN200061,
SN200062
SN200D63,
SN200064,
SN72501
D2927,
YS002
74605
YS002
74604
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MN101EF31G
Abstract: MN101E31 IV-70 MN101E MN101E PANASONIC MN101EF29G LC12 lc08b 82279 IV-65
Text: Cover MICROCOMPUTER MN101E MN101E31G/31D/F31G LSI User’s Manual Pub.No.21631-012E Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the
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MN101E
MN101E31G/31D/F31G
21631-012E
MN101EF31G
MN101E31
IV-70
MN101E
MN101E PANASONIC
MN101EF29G
LC12
lc08b
82279
IV-65
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Untitled
Abstract: No abstract text available
Text: flâ MICRO EL EC TRON IC S CORP DE | b D W f l f l DGODtlt 4 J ”' T- V / - 2 / Light Emitting Diodes TYPE Vf COLOUR \P nm Red Red Orange Green Yellow Orange 660 700 635 565 585 635 0.30 0.50 1.00 0.50 0,50 1,00 20 20 20 20 20 20 2 3 3 3 3 3 20 20 20 20
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YB21D
Y141A
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31DF
Abstract: 31DF 4 7 31df rectifier 31DF diode 31DF 2 7 11DF4 31DF1 31DF2 11DF2 11DF3
Text: Data Sheet No. PD-2.196 INTERNATIONAL RECTIFIER I«R 1 1 D F A IM D 3 1 D F S E R IE S 1 Amp and 3 Amp Fast Recovery Rectifiers Description/Features Major Ratings and Characteristics 11DF1 11DF2 11DF3 11DF4 31DF1 31DF2 31DF3 31DF4 Units 1.0 3.0 A , @ 50 Hr
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11DF1
11DF2
11DF3
11DF4
31DF1
31DF2
31DF3
31DF4
D-6000
31DF
31DF 4 7
31df rectifier
31DF diode
31DF 2 7
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6CWF10F
Abstract: JPF40 10DF8 11DF2
Text: International [^Rectifier Diodes Ultra-Fast Recovery 1 to 6.6 Am ps lF AV @ TC Part Number vrw m IFSM (1) @ 60 Hz (A) Max. Vf m @ 'F(AV) RihJC DC (V) (°cyw) 115 115 trr (ns) Case Outline Number (6) Notes J5 (2) 00 (A) rc ) 10DF4 10DF6 100 200 4 00 600 800
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10DF1
10DF2
10DF4
10DF6
11DF1
11DF2
11DF4
30DF1
30DF2
30DF4
6CWF10F
JPF40
10DF8
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ MICRO SbE D • bllS'ìO? QQQ1SDS 4fl4 HI1 3L M ICRO Q U A LIT Y / SEMICONDUCTOR, INC High Voltage Diode 'T - Ö 3 ""1 * 5 H I153 Designed for High Temperature Operation Low RFI/EMI LTR. A B C D E F G H INCHES .360 Dia. .50 Dia. 3.7 1.18 Dia.
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I--------------------63
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Diode 31DQ04
Abstract: 31DQ04 31DQ03 4vua
Text: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX
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31DQ03
31DQ04
31DQ03
J00kH
Diode 31DQ04
31DQ04
4vua
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DIODE 31D
Abstract: 31D DIODE
Text: bEE D • b427525 0D37Mbô 7bS « N E C E LIGHT EM ITTIN G DIODE NDL4103L1 850 nm O PT IC A L FIBER C O M M U N IC A T IO N S A IG a A s LIGHT EM IT TIN G D IO D E N E C ELECTRONICS INC D E S C R IP T IO N N D L4 1 0 3 L1 is an A IG aA s double heterostructure tight emitting diode, especially designed for a light source for optical fiber
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b427525
0D37Mbô
NDL4103L1
GI-50
DD37470
DIODE 31D
31D DIODE
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Untitled
Abstract: No abstract text available
Text: SLD302XT SONY. 200mW High Power Laser Diode Description SLD302XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by
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SLD302XT
200mW
SLD302XT
180mW
180mW)
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LN2054
Abstract: ss452 1N2064 1N2068 1N3735 1N3743 1N4044 1N4056 300U 300a 1000v DIODE RECTIFIER
Text: Bulletin 12039 hTtemational Rectifier 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES Features A llo y diode P eak reverse vo lta g e up to 1000V P opular series fo r rough service S tandard JEDEC typ e s Stud cathode and stud anode version Typical Applications
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70/300u
-200PC_
500UCR)
LN2054
ss452
1N2064
1N2068
1N3735
1N3743
1N4044
1N4056
300U
300a 1000v DIODE RECTIFIER
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Untitled
Abstract: No abstract text available
Text: DMN3135LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 47mΩ @ VGS = 10V 4.1A 70mΩ @ VGS = 4.5V 3.3A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN3135LVT
AEC-Q101
DS35408
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C943 transistor
Abstract: DI 944 c939 transistor transistor c939 transistor C938
Text: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses
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IRGPC30KD2
O-247AC
C-944
C943 transistor
DI 944
c939 transistor
transistor c939
transistor C938
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Untitled
Abstract: No abstract text available
Text: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN3135LVT
AEC-Q101
DS35408
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IN5417
Abstract: CAPACITOR JL 1500 AF100
Text: M an A M P com pany Wireless Bipolar Power Transistor, 100W P 1450-1550 MHz H 1 5 1 6 -1 0 0 Features • • • • • D esigned fo r L inear A m plifier A pplications Class AB: -32 dBc Typ 3 rd IMD at 100 W atts PEP C o m m o n E m itter C o n fig u ratio n
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5000pF
IN5417
PH1516-100
CAPACITOR JL 1500
AF100
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Untitled
Abstract: No abstract text available
Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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DISCRETE/OPTOJ9097250
DT-33-3Sâ
MG-20Q6EK1
hFEc100
MG20Q6EK1-1
TCH72SG
DDlb30Ã
iG20Q6F
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21dq
Abstract: No abstract text available
Text: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics
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0D05041
11DQ03
11DQ05
21DQ03
31DQ03
31DQ05
11DQ04
11DQ06
21DQ04
31DQ04
21dq
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4 Shaft current transformer ILDD
Abstract: 5 MVA synchronous machine ILDD Shaft current transformer 2.5 MVA transformer 101-BA RK682 50 mva transformer buchholz relay 5 MVA generator ABB 5 MVA generator synchronous
Text: ~ ~~ f 'r;i~;~ ! B~ . """""".""'-"~-"" '""'Cc", J"' ~:ct~ij, REG 100 Series ~~ryn~~ '-' 1 MDBO2004-EN Page 1 March 1992 Changed since August 1990 Data subjecl lo change wilhoul nolice '!'~~:r Generator protection ABB Network Controi & Protectiorl SE 900017
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MDBO2004-EN
-Differenti682
22o-240Vac
11o-120Vac
021-AA
004-AB
004-BB
004-GB
RK682
4 Shaft current transformer ILDD
5 MVA synchronous machine
ILDD Shaft current transformer
2.5 MVA transformer
101-BA
50 mva transformer
buchholz relay
5 MVA generator
ABB 5 MVA generator synchronous
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Untitled
Abstract: No abstract text available
Text: P^pi G£C PLESSEY S E M I C O N D U C T O R S DS4136-5.2 GP300LSS16S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A ^CfCONT) 600A ^C(PK) 270ns tr 590ns t. APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS.
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DS4136-5
GP300LSS16S
270ns
590ns
44lbs
70lbs
88lbs
18lbs
1500g
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SML1001RBN
Abstract: No abstract text available
Text: SEMELAB PLC _ m bOE D m 0133107 GGDOSTb MflM H S U L B i _ MOS POWER 4 TO-24Zr SEME LAB SM L1001R BN SM L901R BN 1000V 900V 11.0A 1.00Í2 11.0A 1.0012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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O-24Zr
L1001R
L901R
SML901RBN
SML1001RBN
O-247AD
SML1001RBN
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a431 ic
Abstract: LM 2536 A431 ASTEC AS431 TO 92 ASTEC SEMICONDUCTOR AS431 A431 Programmable Voltage Reference
Text: <////> ASTEC AS431 Precision Adjustable Shunt Reference Features Description • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The adjustable shunt regulator is ideal for a wide variety of linear
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AS431
AS431
a431 ic
LM 2536
A431
ASTEC AS431 TO 92
ASTEC SEMICONDUCTOR
A431 Programmable Voltage Reference
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6074C
Abstract: No abstract text available
Text: February 1988 Semiconductor MM54C08/MM74C08 Quad 2-Input AND Gate General Description Features Employing complementary MOS CMOS transistors to achieve wide power supply operating range, low power con sumption and high noise margin, these gates provide basic
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MM54C08/MM74C08
6074C
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N8T26AN
Abstract: N8T28N
Text: Signetics 8T26A, 28 Bus Transceivers 3-State Quad Bus Transceiver Product Specification Logic Products FEATURES • Ideal lor: - Half-duplex data transmission - Memory interface buffers - Data routing in bus oriented systems - High current drivers - MOS/CMOS-to-TTL interface
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8T26A,
200/iA
N8T26A
N8T28
N8T26AN,
N8T28N
8T26A/28
F10030S
AF02600S
N8T26AN
N8T28N
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