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    31D DIODE Search Results

    31D DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    31D DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS Model Number TYPE 31D-1E 12N1 Parameters Test Conditions Units 31D-1E12N1 31D-1E22N1 31D-1E32N1 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 70 400 1500 Coil Resistance VDC-Max 3.6 9.6


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    31D-1E 31D-1E12N1 31D-1E22N1 31D-1E32N1 106Cyc. Pin9-14) Pin1-13) Pin2-14) 31D-1E12N1 31D-1E22N1 PDF

    D475

    Abstract: 31DQ 31DQ03 31DQ04 C-16 sapk 31DQ05
    Text: PD-2.304 International S Rectifier 31 dqo 3 31 dqo 4 SCHOTTKY RECTIFIER 3.3 Amp Description/Features Major Rating» and Characteristics Characteristics 31D Q . Units ' f AV Rectan9ular waveform 3.3 A 30/40 V lFSH tp-5yssine 470 A VF 0.55 V -40to125 °C


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    31DQ09 31DQ10 D475 31DQ 31DQ03 31DQ04 C-16 sapk 31DQ05 PDF

    74605

    Abstract: YS002 74604 sn200062
    Text: 6381725 TEXAS INSTR CAS I C / M E M O R Y 31D 74602 SN200060, SN200061, SN200062 SN200D63, SN200064, SN72501 THERMAL RESISTANCE MEASUREMENT DEVICES D2927, SEPTEMBER 1987 * Isolated Pow er Resistor Network • Internal Therm al Sensing Device S N 2 0 0 0 6 0 . . . D PACKAGE


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    SN200060, SN200061, SN200062 SN200D63, SN200064, SN72501 D2927, YS002 74605 YS002 74604 PDF

    MN101EF31G

    Abstract: MN101E31 IV-70 MN101E MN101E PANASONIC MN101EF29G LC12 lc08b 82279 IV-65
    Text: Cover MICROCOMPUTER MN101E MN101E31G/31D/F31G LSI User’s Manual Pub.No.21631-012E Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the


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    MN101E MN101E31G/31D/F31G 21631-012E MN101EF31G MN101E31 IV-70 MN101E MN101E PANASONIC MN101EF29G LC12 lc08b 82279 IV-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: flâ MICRO EL EC TRON IC S CORP DE | b D W f l f l DGODtlt 4 J ”' T- V / - 2 / Light Emitting Diodes TYPE Vf COLOUR \P nm Red Red Orange Green Yellow Orange 660 700 635 565 585 635 0.30 0.50 1.00 0.50 0,50 1,00 20 20 20 20 20 20 2 3 3 3 3 3 20 20 20 20


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    YB21D Y141A PDF

    31DF

    Abstract: 31DF 4 7 31df rectifier 31DF diode 31DF 2 7 11DF4 31DF1 31DF2 11DF2 11DF3
    Text: Data Sheet No. PD-2.196 INTERNATIONAL RECTIFIER I«R 1 1 D F A IM D 3 1 D F S E R IE S 1 Amp and 3 Amp Fast Recovery Rectifiers Description/Features Major Ratings and Characteristics 11DF1 11DF2 11DF3 11DF4 31DF1 31DF2 31DF3 31DF4 Units 1.0 3.0 A , @ 50 Hr


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    11DF1 11DF2 11DF3 11DF4 31DF1 31DF2 31DF3 31DF4 D-6000 31DF 31DF 4 7 31df rectifier 31DF diode 31DF 2 7 PDF

    6CWF10F

    Abstract: JPF40 10DF8 11DF2
    Text: International [^Rectifier Diodes Ultra-Fast Recovery 1 to 6.6 Am ps lF AV @ TC Part Number vrw m IFSM (1) @ 60 Hz (A) Max. Vf m @ 'F(AV) RihJC DC (V) (°cyw) 115 115 trr (ns) Case Outline Number (6) Notes J5 (2) 00 (A) rc ) 10DF4 10DF6 100 200 4 00 600 800


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    10DF1 10DF2 10DF4 10DF6 11DF1 11DF2 11DF4 30DF1 30DF2 30DF4 6CWF10F JPF40 10DF8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ MICRO SbE D • bllS'ìO? QQQ1SDS 4fl4 HI1 3L M ICRO Q U A LIT Y / SEMICONDUCTOR, INC High Voltage Diode 'T - Ö 3 ""1 * 5 H I153 Designed for High Temperature Operation Low RFI/EMI LTR. A B C D E F G H INCHES .360 Dia. .50 Dia. 3.7 1.18 Dia.


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    I--------------------63 PDF

    Diode 31DQ04

    Abstract: 31DQ04 31DQ03 4vua
    Text: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX


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    31DQ03 31DQ04 31DQ03 J00kH Diode 31DQ04 31DQ04 4vua PDF

    DIODE 31D

    Abstract: 31D DIODE
    Text: bEE D • b427525 0D37Mbô 7bS « N E C E LIGHT EM ITTIN G DIODE NDL4103L1 850 nm O PT IC A L FIBER C O M M U N IC A T IO N S A IG a A s LIGHT EM IT TIN G D IO D E N E C ELECTRONICS INC D E S C R IP T IO N N D L4 1 0 3 L1 is an A IG aA s double heterostructure tight emitting diode, especially designed for a light source for optical fiber


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    b427525 0D37Mbô NDL4103L1 GI-50 DD37470 DIODE 31D 31D DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: SLD302XT SONY. 200mW High Power Laser Diode Description SLD302XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by


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    SLD302XT 200mW SLD302XT 180mW 180mW) PDF

    LN2054

    Abstract: ss452 1N2064 1N2068 1N3735 1N3743 1N4044 1N4056 300U 300a 1000v DIODE RECTIFIER
    Text: Bulletin 12039 hTtemational Rectifier 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES Features A llo y diode P eak reverse vo lta g e up to 1000V P opular series fo r rough service S tandard JEDEC typ e s Stud cathode and stud anode version Typical Applications


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    70/300u -200PC_ 500UCR) LN2054 ss452 1N2064 1N2068 1N3735 1N3743 1N4044 1N4056 300U 300a 1000v DIODE RECTIFIER PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3135LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 47mΩ @ VGS = 10V 4.1A 70mΩ @ VGS = 4.5V 3.3A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


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    DMN3135LVT AEC-Q101 DS35408 PDF

    C943 transistor

    Abstract: DI 944 c939 transistor transistor c939 transistor C938
    Text: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses


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    IRGPC30KD2 O-247AC C-944 C943 transistor DI 944 c939 transistor transistor c939 transistor C938 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS on TA = 25°C 60mΩ @ VGS = 10V 3.5A 100mΩ @ VGS = 4.5V 2.8A 30V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


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    DMN3135LVT AEC-Q101 DS35408 PDF

    IN5417

    Abstract: CAPACITOR JL 1500 AF100
    Text: M an A M P com pany Wireless Bipolar Power Transistor, 100W P 1450-1550 MHz H 1 5 1 6 -1 0 0 Features • • • • • D esigned fo r L inear A m plifier A pplications Class AB: -32 dBc Typ 3 rd IMD at 100 W atts PEP C o m m o n E m itter C o n fig u ratio n


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    5000pF IN5417 PH1516-100 CAPACITOR JL 1500 AF100 PDF

    Untitled

    Abstract: No abstract text available
    Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


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    DISCRETE/OPTOJ9097250 DT-33-3Sâ MG-20Q6EK1 hFEc100 MG20Q6EK1-1 TCH72SG DDlb30Ã iG20Q6F PDF

    21dq

    Abstract: No abstract text available
    Text: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics


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    0D05041 11DQ03 11DQ05 21DQ03 31DQ03 31DQ05 11DQ04 11DQ06 21DQ04 31DQ04 21dq PDF

    4 Shaft current transformer ILDD

    Abstract: 5 MVA synchronous machine ILDD Shaft current transformer 2.5 MVA transformer 101-BA RK682 50 mva transformer buchholz relay 5 MVA generator ABB 5 MVA generator synchronous
    Text: ~ ~~ f 'r;i~;~ ! B~ . """""".""'-"~-"" '""'Cc", J"' ~:ct~ij, REG 100 Series ~~ryn~~ '-' 1 MDBO2004-EN Page 1 March 1992 Changed since August 1990 Data subjecl lo change wilhoul nolice '!'~~:r Generator protection ABB Network Controi & Protectiorl SE 900017


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    MDBO2004-EN -Differenti682 22o-240Vac 11o-120Vac 021-AA 004-AB 004-BB 004-GB RK682 4 Shaft current transformer ILDD 5 MVA synchronous machine ILDD Shaft current transformer 2.5 MVA transformer 101-BA 50 mva transformer buchholz relay 5 MVA generator ABB 5 MVA generator synchronous PDF

    Untitled

    Abstract: No abstract text available
    Text: P^pi G£C PLESSEY S E M I C O N D U C T O R S DS4136-5.2 GP300LSS16S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 300A ^CfCONT) 600A ^C(PK) 270ns tr 590ns t. APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS.


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    DS4136-5 GP300LSS16S 270ns 590ns 44lbs 70lbs 88lbs 18lbs 1500g PDF

    SML1001RBN

    Abstract: No abstract text available
    Text: SEMELAB PLC _ m bOE D m 0133107 GGDOSTb MflM H S U L B i _ MOS POWER 4 TO-24Zr SEME LAB SM L1001R BN SM L901R BN 1000V 900V 11.0A 1.00Í2 11.0A 1.0012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    O-24Zr L1001R L901R SML901RBN SML1001RBN O-247AD SML1001RBN PDF

    a431 ic

    Abstract: LM 2536 A431 ASTEC AS431 TO 92 ASTEC SEMICONDUCTOR AS431 A431 Programmable Voltage Reference
    Text: <////> ASTEC AS431 Precision Adjustable Shunt Reference Features Description • Temperature-compensated: 30 ppm/°C The AS431 is a three-terminal adjustable shunt regulator providing a highly accurate 0.5% bandgap reference. The adjustable shunt regulator is ideal for a wide variety of linear


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    AS431 AS431 a431 ic LM 2536 A431 ASTEC AS431 TO 92 ASTEC SEMICONDUCTOR A431 Programmable Voltage Reference PDF

    6074C

    Abstract: No abstract text available
    Text: February 1988 Semiconductor MM54C08/MM74C08 Quad 2-Input AND Gate General Description Features Employing complementary MOS CMOS transistors to achieve wide power supply operating range, low power con­ sumption and high noise margin, these gates provide basic


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    MM54C08/MM74C08 6074C PDF

    N8T26AN

    Abstract: N8T28N
    Text: Signetics 8T26A, 28 Bus Transceivers 3-State Quad Bus Transceiver Product Specification Logic Products FEATURES • Ideal lor: - Half-duplex data transmission - Memory interface buffers - Data routing in bus oriented systems - High current drivers - MOS/CMOS-to-TTL interface


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    8T26A, 200/iA N8T26A N8T28 N8T26AN, N8T28N 8T26A/28 F10030S AF02600S N8T26AN N8T28N PDF