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    3203 TRANSISTOR Search Results

    3203 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    3203 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 3203

    Abstract: AN3203 APP3203 MAX7409 MAX966 3203
    Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS FILTER CIRCUITS ANALOG Keywords: lowpass filter, step response, time-domain response, signal conditioning, switched-capacitor filter, SC filter Apr 26, 2004 APPLICATION NOTE 3203 Lowpass Filter Has Improved Step Response


    Original     		fOSC/100. com/an3203 MAX7409: MAX966: AN3203, APP3203, Appnote3203, transistor 3203 AN3203 APP3203 MAX7409 MAX966 3203 PDF

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating


    OCR Scan     		KTA1271 Symbo25Â -10mAIb -100mA -700mA -20mA -10mA -10Vfi PDF

    3203 NPN

    Abstract: 2SD2116 3203 transistor transistor 3203
    Text: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C


    OCR Scan     		2SD2116 3203 NPN 3203 transistor transistor 3203 PDF

    sda 3203

    Abstract: TA-317 14 PIN IC transistor 3203 SDA3203 fta satellite TA-317 TA317 suen
    Text: SIEM ENS SDA 3203 1.3 GHz PLL with 3-Wire Bus • Low Current Consumption • Cost-Effective and Space-Saving Design • Command Transmission Via a 3-Wire Bus • Prescaler Output Frequency is Free from Interference Radiation • 4 Software-Controlled Outputs


    OCR Scan     		Q67000-A2526 sda 3203 TA-317 14 PIN IC transistor 3203 SDA3203 fta satellite TA-317 TA317 suen PDF

    NE567

    Abstract: tone decoder ne567 567 tone decoder
    Text: Issued March 1998 284-3203 Data Pack J Phase locked loops NE567 Data Sheet RS stock number 307-294 The RS NE567 tone and frequency decoder is a highly stable phase-locked loop with synchronous AM lock detection and power output circuitry. Its primary function is to drive a load


    Original     		NE567 NE567 500kHz) 100mA tone decoder ne567 567 tone decoder PDF

    transistor 2sc 3203

    Abstract: transistor 3203 2sc3203 transistor 3203 y
    Text: F SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3203 (a p p lic a t io n s U n it in m m •Low F r e q u e n c y P o w e r A m plifiers [ (B-Class P u sh -p u ll, P o - l W ) ■General P u r p o s e Sw itch in g C ir c u its (f e a t u r e s )


    OCR Scan     		600mW, 800mA 500mA, Ta-25Â 100mA 700mA Ic-10mA transistor 2sc 3203 transistor 3203 2sc3203 transistor 3203 y PDF

    2SD2116

    Abstract: No abstract text available
    Text: Ordering number:EN3203 NPN Epitaxial Planar Silicon Transistor 2SD2116 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064A [2SD2116] 2.5 1.45 1.0 1.0


    Original     		EN3203 2SD2116 2SD2116] 2SD2116 PDF

    ZTX558

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATU RES * 400 V o lt V CE0 * 2 0 0 m A c o n tin u o u s c u rre n t * P ,o t= 1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R


    OCR Scan     		ZTX558 -10mA* -100jiA -320V -20mA, -50mA, -100mA, ZTX558 PDF

    OMA120

    Abstract: FZT605 FZT604 FZT705 ARAA 14ge
    Text: I SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT604 TRANSISTORS ~ ISSUE 3- OCTOBER 1995 FEATURES * Guaranteed * Fast Switching c h~~ Specified up to 2A E PARTMARKING DEVICE TYPE IN FULL DETAIL - COMPLEMENTARY TYPES - FZT604 - FZ1704 c @ B FZT605 - FZT705


    Original     		OT223 FZT604 FZT604 FZ1704 FZT605 FZT705 FZT605 FZTBI14 OMA120 FZT705 ARAA 14ge PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO -400 V


    Original     		ZTX558 200mA 100ms PDF

    2N3204

    Abstract: 2N3203 SDT3775 2N3202 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors
    Text: SOLITRON DEVICES INC E ' .i tï 8 3 6 8602 SOLITRON DEVICES DE I flHbñbDE OODOTBT O D 61C 0 0 9 3 9 INC POWER TRANSISTORS 2N3202 2N3203 2N3204 r- i's-i'7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES


    OCR Scan     		2N3202 2N3203 2N3204 -50mA) SDT3775 SDT3776 SDT3777 SOLITRON DEVICES solitron transistors PDF

    ztx558

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX558 ISSUE 1 - APRIL 94_ FEATURES * 400 V olt VCE0 * 200m A continuous current * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		ZTX558 001G35S ztx558 PDF

    2sc3203

    Abstract: 2sa1271
    Text: 2SA127I SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS APPLICATIONS • Low F r e q u e n c y P o w e r A m p l if i e r s (B -C lass P u sh -p u ll, P o = l W ) ■ General P u r p o s e S w i t c h i n g C i r c u i t s FEATURES • Excellent h FE v s .


    OCR Scan     		2SA127I 600mW, 800mA 500mA, 2SC3203 --35V, 100mA -700m 2sc3203 2sa1271 PDF

    ZTX558

    Abstract: medium power high voltage transistor DSA003769
    Text: ZTX558 TYPICAL CHARACTERISTICS VCE sat - (Volts) 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.2 1.0 0.8 0.6 0.4 0.2 1.4 0.01 0.1 1 10 0.4 1.6 100 0.4 0.2 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps)


    Original     		ZTX558 200mA -50mA, -100mA, -10mA, 20MHz -100V -10mA ZTX558 medium power high voltage transistor DSA003769 PDF

    VP3203N3-G

    Abstract: No abstract text available
    Text: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		VP3203 VP3203 O-243AA OT-89) O-243, DSFP-VP3203 A020408 VP3203N3-G PDF

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed


    OCR Scan     		NE98108 NE98141 NE981 NE98141 s-117 PDF

    irp833

    Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
    Text: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 RF832 irp833 JRF830 IRF830 3203 MOSFET IRF831 RF832 mosfet jrf830 F832 PDF

    TRANSISTOR C 3205

    Abstract: data sw 3205 vent-captor Weber Sensors 320203 3205 transistor C 3205 curent sensor industrial air conditioning diagrams FLOW captor
    Text: weber Engineered Solutions copter vent-captor Type 3202.- & Type 3205. The vent-captor type 3 2 0 2 .- is a solid-state tlow-m onitor for gaseous media in industrial applications. Being totally encapsulated in epoxy resin with no moving parts, this small,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VP3203 yjß S u p e rte x in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering nformation Order Number / Package BV0SS/ ^ D S O N ' d (ON ) BVDgs (max) (min) TO-92 TO-243AA* Dice* -30V 0.6Q 4.0A VP3203N3 VP3203N8 VP3203ND * Sam e as SOT«89. * MIL visual screening available.


    OCR Scan     		VP3203 VP3203N3 O-243AA* VP3203N8 VP3203ND PDF

    gsm signal amplifier

    Abstract: Power Amplifier Module for GSM gsm 0308 DLT3202 GSM900 GSM RF module
    Text: Preliminary DLT3202 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications with Integrated Power Controller Description Features The DLT3202 is a triple-band Power Amplifier Module PAM designed for used as the final RF amplifier in GSM900 and


    Original     		DLT3202 GSM900 DCS1800/PCS1900 DLT3202 gsm signal amplifier Power Amplifier Module for GSM gsm 0308 GSM RF module PDF

    Untitled

    Abstract: No abstract text available
    Text: BiMOS U DUAL 8-BIT LATCHED DRIVER WITH READ BACK With 16 CMOS data latches two sets of eight , CMOS control circuitry for each set of latches, and a bipolar saturated driver for each latch, the UCN5881EP provides low-power interface with maximum flexibility. The driver includes thermal shutdown circuitry to protect


    OCR Scan     		UCN5881EP PDF

    SmartDie

    Abstract: 240486 Intel486TM PROCESSOR FAMILY 242202
    Text: A PRELIMINARY EMBEDDED ULTRA-LOW POWER Intel486 GX PROCESSOR SmartDie™ Product Specification • Ultra-Low Power Member of the Intel486™ Processor Family — 32-Bit RISC Technology Core — 8-Kbyte Write-Through Cache — Four Internal Write Buffers


    Original     		Intel486TM 32-Bit 16-Bit SmartDie 240486 Intel486TM PROCESSOR FAMILY 242202 PDF