W9812G2IH-6
Abstract: W9812G2IH-6C W9812G2IH6I
Text: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3
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W9812G2IH
32BIT
W9812G2IH-6
W9812G2IH-6C
W9812G2IH6I
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w9812g2ih
Abstract: W9812G W9812G2IH-6C
Text: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3
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W9812G2IH
32BIT
W9812G
W9812G2IH-6C
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W9825G2DB
Abstract: W9825G2DB75I
Text: W9825G2DB 2M x 4 BANKS × 32BIT SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W9825G2DB
32BIT
W9825G2DB75I
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cke 2009
Abstract: W9812G2IH-6 W9812G2IH-6C W9812G2IH
Text: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3
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W9812G2IH
32BIT
cke 2009
W9812G2IH-6
W9812G2IH-6C
W9812G2IH
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Untitled
Abstract: No abstract text available
Text: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Banks x 2M x 32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft Sep.06.2002 0.2 2nd Generation Nov.11.2002 0.3 133MHz Speed Added Dec.13.2002
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HY5V52CF
32Bit
133MHz
166MHz
90Ball
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Untitled
Abstract: No abstract text available
Text: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Banks x 2M x 32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft Sep.06.2002 0.2 2nd Generation Nov.11.2002 0.3 133MHz Speed Added Dec.13.2002
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HY5V52CF
32Bit
133MHz
166MHz
HY5V52CF
456bit
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W9812G2IH
Abstract: W9812G2IH-6
Text: W9812G2IH 1M x 4 BANKS × 32BIT SDRAM Table of Contents1 GENERAL DESCRIPTION . 3 2 FEATURES. 3
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W9812G2IH
32BIT
W9812G2IH
W9812G2IH-6
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Untitled
Abstract: No abstract text available
Text: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Banks x 2M x 32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft Sep.06.2002 0.2 2nd Generation Nov.11.2002 0.3 133MHz Speed Added Dec.13.2002
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HY5V52CF
32Bit
133MHz
HY5V52CF
90Ball
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A45L9332
Abstract: No abstract text available
Text: A45L9332 Series Preliminary 256K X 32Bit X 2 Banks Synchronous Graphic RAM Document Title 256K X 32Bit X 2 Banks Synchronous Graphic RAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue December 4, 1998 Preliminary PRELIMINARY December, 1998, Version 0.0
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A45L9332
32Bit
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Untitled
Abstract: No abstract text available
Text: W9812G2DB 1M x 4 BANKS × 32BIT SDRAM Table of content 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W9812G2DB
32BIT
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Untitled
Abstract: No abstract text available
Text: W981232DH / W9812G2DH 1M x 4 BANKS × 32BIT SDRAM Table of Content1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W981232DH
W9812G2DH
32BIT
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W9864G2EH
Abstract: W9864 w986432eh W986432EH-7
Text: W986432EH / W9864G2EH 512K x 4 BANKS × 32BIT SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W986432EH
W9864G2EH
32BIT
W9864
W986432EH-7
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a45l9332f-6
Abstract: A45L9332 100L
Text: A45L9332 Series 256K X 32Bit X 2 Banks Synchronous Graphic RAM Document Title 256K X 32Bit X 2 Banks Synchronous Graphic RAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue December 4, 1998 Preliminary 1.0 AC and DC data specification update
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A45L9332
32Bit
a45l9332f-6
100L
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L32321A Revision History Revision 0.1 Sep. 15 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES
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M12L32321A
32Bit
M12L32321A
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Untitled
Abstract: No abstract text available
Text: EtronTech Industrial EM638325 2M x 32 Synchronous DRAM SDRAM Rev 1.0 Mar/2006 Pin Assignment (Top View) Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode
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EM638325
Mar/2006
32bit
cycles/64ms
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w9812g2
Abstract: No abstract text available
Text: PRELIMINARY W9812G2DB 1M x 4 BANKS × 32BIT SDRAM GENERAL DESCRIPTION W9812G2DB is a high-speed synchronous dynamic random access memory SDRAM , organized as 1,048,576 words × 4 banks × 32 bits. Using pipelined architecture and 0.13 µm process technology,
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W9812G2DB
32BIT
166Mhz/CL3
PC133/CL2
PC133/CL3
PC100/CL2
w9812g2
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K4D62323HA
Abstract: k4d62323ha-qc60 samsung ddr-3
Text: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D62323HA
64Mbit
32Bit
K4D62323HA-QC50
K4D62323HA-*
conditions10)
4Mx32
2Mx32
K4D62323HA
k4d62323ha-qc60
samsung ddr-3
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Untitled
Abstract: No abstract text available
Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2006 Revision : 1.1 1/29 ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM
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M52S32321A
32Bit
M52S32321A
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K4D263238
Abstract: K4D263238M-QC40
Text: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.0 December 2000 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238M
128Mbit
32Bit
K4D263238M-QC60
2Mx32
4Mx32
K4D263238
K4D263238M-QC40
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EM638325TS-6G
Abstract: EM638325TS5G EM638325TS-7G EM638325TS-5G
Text: EtronTech EM638325 2M x 32 Synchronous DRAM SDRAM (Rev 1.7 Mar./2007) Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode - CAS# Latency: 2 or 3
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EM638325
32bit
cycles/64ms
EM638325TS-5G
EM638325TS-6G
EM638325TS5G
EM638325TS-7G
EM638325TS-5G
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Untitled
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D62323HA
64Mbit
32Bit
K4D62323HA-QC50
K4D62323HA-*
4Mx32
2Mx32
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k4n26323ae
Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003
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K4N26323AE-GC
128Mbit
32Bit
k4n26323ae
K4N26
K4N26323AE-GC20
K4N26323AE-GC22
K4N26323AE-GC25
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Untitled
Abstract: No abstract text available
Text: ESM T M52D128324A 2E Mobile SDRAM 1M x 32Bit x 4Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES The M52D128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with high performance CMOS
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M52D128324A
32Bit
M52D128324A
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DA65
Abstract: K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
Text: Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 0.3 June 2000 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238M
128Mbit
32Bit
250MHz
DA65
K4D263238M-QC40
K4D263238
K4D263238M
K4D263238M-QC45
K4D263238M-QC50
K4D263238M-QC55
K4D263238M-QC60
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