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Qualtek Electronics Corporation FAD1-12032DBMW12 FAN AXIAL 120X32.3MM 24VDC WIRE
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DigiKey	FAD1-12032DBMW12	Bulk	2,494		1	1 $15.72 10 $14.003 100 $12.4815 1000 $11.51888 10000 $11.51888	Buy Now
Mouser Electronics	FAD1-12032DBMW12					1 - 10 - 100 - 1000 $10.05 10000 $10.05	Get Quote
Qualtek Electronics Corporation FAD1-08032DBMW12 FAN AXIAL 80.5X32MM 24VDC WIRE
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DigiKey	FAD1-08032DBMW12	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

32DBMW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3756 Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO =32dBmW typ • Gain: GP = 12dB (typ) • Drain efficiency: ηD = 60% (typ) Maximum Ratings (Ta = 25°C) Characteristics	Original	2SK3756 32dBmW SC-62 2SK3756	PDF
Untitled Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW	PDF
Untitled Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW	PDF
Untitled Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3756 32dBmW	PDF
2SK3756 Abstract: No abstract text available Text: 2SK3756 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3756 ○ VHF/UHF 帯電力増幅用ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途	Original	2SK3756 32dBmW SC-62 70MHz 200mA 20dBmW 470MHz 2SK3756	PDF
2SK3756 Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW 2SK3756	PDF
2SK3756 Abstract: MARKING CODE c5 sc-62 Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW 2SK3756 MARKING CODE c5 sc-62	PDF
MARKING CODE c5 sc-62 Abstract: 2SK3756 marking code C7 transistor toshiba Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3756 32dBmW MARKING CODE c5 sc-62 2SK3756 marking code C7 transistor toshiba	PDF
n-channel 4336 Abstract: mitsubishi microwave MGF2445A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it, m illim e te rs The MGF2445A , power GaAs FET with an N-channel schottky gate , is designed for use in S to Ku band ampli fiers. FEATURES • High output power	OCR Scan	MGF2445A 32dBmW 12GHz 450mA 450mA) n-channel 4336 mitsubishi microwave MGF2445A	PDF