2SK3756
Abstract: No abstract text available
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO =32dBmW typ • Gain: GP = 12dB (typ) • Drain efficiency: ηD = 60% (typ) Maximum Ratings (Ta = 25°C) Characteristics
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2SK3756
32dBmW
SC-62
2SK3756
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Untitled
Abstract: No abstract text available
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other
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Original
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2SK3756
32dBmW
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other
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Original
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2SK3756
32dBmW
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These
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2SK3756
32dBmW
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2SK3756
Abstract: No abstract text available
Text: 2SK3756 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK3756 ○ VHF/UHF 帯電力増幅用 ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途
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2SK3756
32dBmW
SC-62
70MHz
200mA
20dBmW
470MHz
2SK3756
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2SK3756
Abstract: No abstract text available
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other
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Original
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2SK3756
32dBmW
2SK3756
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2SK3756
Abstract: MARKING CODE c5 sc-62
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other
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2SK3756
32dBmW
2SK3756
MARKING CODE c5 sc-62
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MARKING CODE c5 sc-62
Abstract: 2SK3756 marking code C7 transistor toshiba
Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These
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2SK3756
32dBmW
MARKING CODE c5 sc-62
2SK3756
marking code C7 transistor toshiba
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n-channel 4336
Abstract: mitsubishi microwave MGF2445A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it, m illim e te rs The MGF2445A , power GaAs FET with an N-channel schottky gate , is designed for use in S to Ku band ampli fiers. FEATURES • High output power
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MGF2445A
32dBmW
12GHz
450mA
450mA)
n-channel 4336
mitsubishi microwave
MGF2445A
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