is61wv5128
Abstract: IS61WV5128BLL-10TLI IS61WV5128BLL IS61WV5128BLL-10KLI IS61WV5128BLL-10BLI IS61WV5128BLL-10BI IS64WV5128BLL-10CTLA3 IS61WV5128ALL IS61WV512 IS64WV5128BLL-10BA3
Text: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM AUGUST 2009 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)
|
Original
|
PDF
|
IS61WV5128ALL/ALS
IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
IS61/64WV5128ALL/BLL)
IS61/64WV5128ALS/BLS)
IS61WV5128Axx)
IS61/64WV5128Bxx)
IS61WV5128A
IS61WV5128ALL/ALS,
is61wv5128
IS61WV5128BLL-10TLI
IS61WV5128BLL
IS61WV5128BLL-10KLI
IS61WV5128BLL-10BLI
IS61WV5128BLL-10BI
IS64WV5128BLL-10CTLA3
IS61WV5128ALL
IS61WV512
IS64WV5128BLL-10BA3
|
Untitled
Abstract: No abstract text available
Text: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM AUGUST 2009 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speedaccesstime:8,10,20ns • LowActivePower:85mW(typical)
|
Original
|
PDF
|
IS61WV5128ALL/ALS
IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
IS61/64WV5128ALL/BLL)
IS61/64WV5128ALS/BLS)
IS61WV5128Axx)
IS61/64WV5128Bxx)
Th1WV5128ALL/ALS,
|
is61wv5128
Abstract: No abstract text available
Text: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2008 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)
|
Original
|
PDF
|
IS61WV5128ALL/ALS
IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
IS61/64WV5128ALL/BLL)
IS61/64WV5128ALS/BLS)
IS61WV5128Axx)
IS61/64WV5128Bxx)
IS61WV5128Axx
IS61/64WV5128BBSC
is61wv5128
|
IS61WV5128BLL
Abstract: IS61wv5128BLL-10tli IS61WV5128BLL-10KLI is61wv5128
Text: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM NOVEMBER 2008 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)
|
Original
|
PDF
|
IS61WV5128ALL/ALS
IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
IS61/64WV5128ALL/BLL)
IS61/64WV5128ALS/BLS)
IS61WV5128Axx)
IS61/64WV5128Bxx)
IS61WV512
IS61WV5128BLL
IS61wv5128BLL-10tli
IS61WV5128BLL-10KLI
is61wv5128
|
Untitled
Abstract: No abstract text available
Text: M ITS U B IS H I LSlS M5M467800/465800AJ,TP-5,-6,-5S,-6S FAST PAGE MODE 67108864-BIT 83886Q8-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 8388608-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power
|
OCR Scan
|
PDF
|
M5M467800/465800AJ
67108864-BIT
83886Q8-WORD
8388608-word
8388608-WQRP
|
LH5S
Abstract: No abstract text available
Text: / - V •I'. SPEC 0o. E L 0 7 X 0 7 3 I S S 0 E: Sec. 20 1905 To , S P E C Product Type I F ! C A T I O H S 4M b i t MAS K ROM LH5V4RXX l o d e l No. LH53V4R00T JKThis «pecificatioos cootains 12 pages including the cover and appendix. I f you have any objections, please contact as before issuing purchasing order.
|
OCR Scan
|
PDF
|
LH53V4R00T)
C0S70IEBS
C01P0RATI0N
LH53V4ROOT
LH5S
|
Untitled
Abstract: No abstract text available
Text: IVDCIC In d u strial G rade M X S 7 L 1 OOO 1 M-BITI1 2BK x 8 LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns • Totally static operation
|
OCR Scan
|
PDF
|
MX27L1000
loca1000TI-25
MX27L10O0PI-2O
MX27L1000QI-20
MX27L1OOOMI-20
MX27L1OOOTI-20
32PinTSOP
MX27L1000PI-15
MX27L1000QI-15
MX27L1000MI-15
|
LH52A512N70LL
Abstract: No abstract text available
Text: • 64K x 8 bit organization • Access time: 70/100 ns MAX. • Current consumption: Operating: 385 mW (MAX.) 110 mW (tRc, twc = "I l^s) Standby: 275 nW (MAX.) Data retention: 3 (Vcc = 3 V, T a = 25°C) 9 nW (Vcc = 3 V, TA = 40°C) • Single 5 V power supply: 5 V ±10%
|
OCR Scan
|
PDF
|
LH52A512
32-pin,
525-mil
LH52A512
QP032-P-0820)
LH52A512N70LL
|
CXK581000BP
Abstract: a1de CXK581000BTM cxk581000bm CXK581000B 5 pin A13E
Text: S O N Y CXK581OOOBTM/BYM/BM/BP -55LL/70LL/1 OLL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOBTM/BYM/BM/BP is a high speed CMOS static RAM organized as 131072 words by 8 bits. Special feature are low power consumption, high speed and broad package line-up.
|
OCR Scan
|
PDF
|
CXK581OOOBTM/BYM/BM/BP
-55LL/70LL/1
131072-word
CXK581
-55LL
-70LL
-10LL
CXK581000BTM/BYM
CXK581000BP
a1de
CXK581000BTM
cxk581000bm
CXK581000B
5 pin A13E
|
Untitled
Abstract: No abstract text available
Text: MX27L4000 4 M -BIT 5 1 2 K X FEATURES • • • • • 512K x 8 organization Wide voltage range, 2.7V to 3.6V +12.5V programming voltage Fast access time: 200/250ns Totally static operation 8 LOW VOLTAGE OPERATION CMOS EPROM Completely TTL compatible
|
OCR Scan
|
PDF
|
MX27L4000
200/250ns
32pinTSOP
MX27L4000
|
Untitled
Abstract: No abstract text available
Text: IVI>41 Ind u strial G rade M X 2 7 L 1 0 0 0 MACRONIX. INC. 1 M-BITH 2BK x 8 ] LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns
|
OCR Scan
|
PDF
|
100/jA
X27L1000
MX27L1000DI-20
MX27L1000DI-15
MX27L1000PI-25
MX27L1000MI-25
MX27L1OOOTI-25
MX27L1000PI-20
MX27L10O0MI-20
MX27L100OTI-20
|