Untitled
Abstract: No abstract text available
Text: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
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32R5121/5121R
14-Channel
32R5121/5121R
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sol 44
Abstract: H11Y
Text: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi
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00Qb477
32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H11Y
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sol 44
Abstract: H13Y
Text: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They
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32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H13Y
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H13Y
Abstract: 5121R H13V
Text: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
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32R5121/5121R
14-Channel
32R5121/5121R
H13Y
5121R
H13V
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Untitled
Abstract: No abstract text available
Text: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:
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14-CHANNEL,
VM312H
32R5121
600nH,
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HD13X
Abstract: MAX4727 HD10X
Text: VM 312H August, 1995 FEATURES • • • • • • • • • CO N N EC TIO N DIAGRAM S High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VFiz Maximum - Input C apacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 5 ^iH
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14-CHANNEL,
V/12V
32R5121
600nH,
HD13X
MAX4727
HD10X
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Untitled
Abstract: No abstract text available
Text: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write
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14-CHANNEL,
VM312H
180mW.
100mV,
10MHz
10OmV,
10MHz
600nH,
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VM312
Abstract: No abstract text available
Text: 4H l V M 3 1 2 10-CHANNEL, HIGH PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1991 TWO-TERMINAL READ/WRITE PREAMPS F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nV/VHz maximum - Input capacitance = 30pF maximum
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10-CHANNEL,
50V/V
200nH
VM3128PM34J
34-lead
VM3129PMJ
32-lead
VM3128PMJ
VM312
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Untitled
Abstract: No abstract text available
Text: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n
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VM312H
14-CHANNEL,
50V/V
100mV,
10MHz
600nH,
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Untitled
Abstract: No abstract text available
Text: V M W X IS J S S j- 3 1 2 H 14-CHANNEL, h ig h - p e r f o r m a n c e , THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 CO N N EC TIO N DIAGRAM S TWO-TERMINAL PREAMPLIFIERS FE A T U R E S • High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VHz Maximum
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14-CHANNEL,
32R5121
VM312H
600nH,
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