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    33 J PH Search Results

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    Vishay Intertechnologies D472K33Y5PH63J5R

    Ceramic Disc Capacitors 4700pF 100V 10% Y5P 5mm LS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics D472K33Y5PH63J5R 22,336
    • 1 $0.26
    • 10 $0.109
    • 100 $0.072
    • 1000 $0.06
    • 10000 $0.048
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    Vishay Intertechnologies D332K29Y5PH63J5R

    Ceramic Disc Capacitors D 100V 3,3nF +/-10% Y5P BULK e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics D332K29Y5PH63J5R 19,174
    • 1 $0.26
    • 10 $0.119
    • 100 $0.071
    • 1000 $0.06
    • 10000 $0.048
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    KEMET Corporation PHE426DJ4330JR05

    Film Capacitors 100V 0.0033uF 5% LS=5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PHE426DJ4330JR05 7,684
    • 1 $0.36
    • 10 $0.162
    • 100 $0.118
    • 1000 $0.097
    • 10000 $0.096
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    KEMET Corporation PHE426MJ4330JR05

    Film Capacitors 630V 0.0033uF 5% LS=5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PHE426MJ4330JR05 7,052
    • 1 $0.4
    • 10 $0.275
    • 100 $0.181
    • 1000 $0.12
    • 10000 $0.097
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    KEMET Corporation PHE426DJ5330FR17T0

    Film Capacitors 63V 0.033uF 1% LS=5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PHE426DJ5330FR17T0 5,506
    • 1 $2.57
    • 10 $1.94
    • 100 $1.4
    • 1000 $1.06
    • 10000 $0.97
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    33 J PH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MS-034

    Abstract: n 332 ab sot683 HBGA960
    Text: PDF: 2001 Apr 24 Philips Semiconductors Package outline HBGA960: plastic, heatsink ball grid array package; 960 balls; body 33 x 33 x 2.4 mm SOT683-1 B D A D1 ball A1 index area A3 A E1 E A2 A1 detail X e1 b e AL AJ AG AE AC AA W U R N L J G E C A ∅w M AF


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    HBGA960: OT683-1 MS-034 MS-034 n 332 ab sot683 HBGA960 PDF

    reh3

    Abstract: 9555TAC 7B-26
    Text: 64>*, ?6=33|<60>3 >;872 >?0?3 =380C 4IEUVSIT ^ N`glg akgdYlagf ^ JED klYlmk af\a[Ylgj ^ Da]d][lja[ klj]f_l` 9555T ^ X]jg [jgkk gj jYf\ge lmjf2gf ^ Bmadl2af kfmZZ]j ^ P]egnYZd] ^af_]j hjgg^ [gn]j YnYadYZd] ^ NYf]d egmfl ^ Efnajgfe]flYd ^ja]f\dq hjg\m[l .PgHQ [gehdaYfl/


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    9555T 87TDC 9555TAC 6555K 55TDC/ 287TDC reh3 9555TAC 7B-26 PDF

    marking 3N1

    Abstract: No abstract text available
    Text: Thin Film Chip Inductors SPECIFICATIONS CTTF0402F Series Please specify tolerance code when ordering. CTTF0402F-0N2_ B = ±0.1nH, C = ±0.2nH, S = ±0.3nH, F = ±1%, G = ±2%, H = ±3%, J = ±5% * = F, G, H or J only * = B, C, or S only From 0.2 nH to 33 nH


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    CTTF0402F CTTF0402F-0N2_ CTTF0402F-0N4_ CTTF0402F-0N8_ marking 3N1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Thin Film Chip Inductors SPECIFICATIONS CTTF0402F Series Please specify tolerance code when ordering. CTTF0402F-0N2_ B = ±0.1nH, C = ±0.2nH, S = ±0.3nH, F = ±1%, G = ±2%, H = ±3%, J = ±5% * = F, G, H or J only * = B, C, or S only From 0.2 nH to 33 nH


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    CTTF0402F CTTF0402F-0N2_ CTTF0402F-0N4_ CTTF0402F-0N8_ CTTF0402F-1N0_ CTTF0402F-1N2_ CTTF0402F-1N5_ CTTF0402F-1N6_ CTTF0402F-1N8_ PDF

    SI 1340

    Abstract: 42-PIN
    Text: 2.600 [6 6 .0 4 ]' 1.300 [33 .0 2] PIN .1 .26 [6.6] COMPONENT CLEARANCE 0.129 [03.28] 4 PLACES .450 • [11.43] ¿k X Q J a o a oJ flJJtel ’ jû o o a ' û ' û ' o> A O f tle y? [33 .0 2] ft h u0 e a t „ n uuu uuu tt/ u [ ]D |= in J Û 0 L J D Ù p. a


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    11111II1L 42-PIN SI 1340 PDF

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


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    bb53131 RX1214B150W RX1214B150W PDF

    CA3100E

    Abstract: CA3100 2120D D04B
    Text: HARRIS SEMICOND SECTOR b l E ]> WÊ M3DE271 GGMbSTQ h5T I H HAS CA3100 33 HARRIS SEMICONDUCTOR J ru Ë \J \J Wideband Operational Amplifier March 1993 Description • High Open Loop Gain at Video Typ. at 1MHz


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    M3DE271 CA3100 CA3100 38MHz 110kHz. 15MHz \2N5320 33fiF 50QLME: CA3100E 2120D D04B PDF

    gp017

    Abstract: ag35 ah3q VT82C686A VT82C im339 LM33B Q2N3906 EL B17 c520 U468 M/ag35 ah3q
    Text: * I •- ■■ » . I ' C ' | . " " . B. ■■ G799 MB Block Diagram j ~~ e per 1 1 133 "1371“ 1 t 100 .VI. 3 1 3 6* 33 U44 M O D E/PC I F FS3/PCI0 PC11 J f lL PC 12 J J u PCI3 J 2 _ J l^ < PCM CPUSTP# CPUF PCISTPHWREFO


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    1410C 2N3906 CORH127 2N3906 DTA144& IM339 LM33B gp017 ag35 ah3q VT82C686A VT82C im339 LM33B Q2N3906 EL B17 c520 U468 M/ag35 ah3q PDF

    KS56C220

    Abstract: No abstract text available
    Text: « INVERTER GflIN/PHRSE vs. IC : KS56C220 Ft - 19.3 EMHzl FREQUENCY CHRRRCTERISTICS » Vdd : 3 CV] P.M - 118.8 Cdeg] Freq. CHHz] ~> 0 MB3 5»“ JÌS 8 Ì KS56C220 - 1 CL1/CL2 CpF3 33 / 33 Vdd- 3 CV3 FCR4.19M5 Fig.a^e Typical a. V1H/V1L 7 5 m u 3.5 3


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    KS56C220 PDF

    RX1214B150W

    Abstract: transistor bc 325
    Text: J J _ L _ _ N AMER PHILIPS/DISCRETE OLE D • I JJ ^ O5O3J1 3 1 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C


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    bb53131 RX1214B150W resistanc250 RX1214B150W transistor bc 325 PDF

    2wire 4wire telephone

    Abstract: varistor far 10k 150 RC1496
    Text: RC1496/14 Integral Modems < J > Rockwell RC1496/14 V.33 14400 bps 4-Wire Modem INTRODUCTION FEATURES The Rockwell RC1496/14 is a 14400 bps 4-wire, fullduplex, synchronous/asynchronous, V.33 modem data pump module. It operates over a leased line with dial backup.


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    RC1496/14 RC1496/14 RS-232-C) 2wire 4wire telephone varistor far 10k 150 RC1496 PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC631/32/33 and MIC641/42/43 S rn r _ 'l—- l GlÉjM •-j Ü K G J lP L JM jjw j |l^ KÜi f P j| ^ f ijB n J Step-Up Switching Regulators g g |j|ghg j|i|fl| General Description The MIC631/641, MIC632/642, and MIC633/643 are fixed frequency, hysteretic-mode, step-up boost regulators.


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    MIC631/32/33 MIC641/42/43 MIC631/641, MIC632/642, MIC633/643 50kHz, MIC63x 150mW) PDF

    D60T2575

    Abstract: D60T2590 1S697 D60T307510 D62T D62T307510 FC75A
    Text: POlüEREX INC Tfl DE j T S ' m a i QOQSbb? 0 ^ M |j r |l J F y IM . » D60T/D62T D60T/D62T Powerex, Inc., Hillls S treet, Youngwoad, Pennsylvania 1S697 412 925-7272 ~ j - 33^15" _ 75 _ 90 NPN Power Switching Transistors 75-90 Amperes 250-500 Volts


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    T-33-15 D60T/D62T_ Amperes/250-500 D60T/D 00DSb74 D60T2575 D60T2590 1S697 D60T307510 D62T D62T307510 FC75A PDF

    Untitled

    Abstract: No abstract text available
    Text: « INVERTER GRIN/PHRSE vs. FREQUENCY CHRRRCTERISTICS » IC : KS57C58I6XHI Ft - 23.6 MHz] V M : 3 [V] P.M - 107.4 [dag] Freq. CMHzl —>0 [dB] J-d-“-9Ì KS57C5016XHI - 1 CL1/CL2 CpFD 33 / 33 FCR4.19M5 F ig .a ^ e Vdd 3 CV3 T y p ic a l a. V1H/V1L CVD


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    KS57C5B16XHI KS57C5016XHI PDF

    BD204

    Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
    Text: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.


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    BD202F; BD204F BDX78F 7110fl2b D042fl5b T-33-1 inSOT186 BD201F, BD203F BDX77F BD204 BD202F til 31a BD201F BD204F BDX78F Philips 119 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10 N - I 10-' | ±0.1 (0 -6 ) CONNECTOR PO SITIO N / J J J J \ - I 1 % L 1.65 RECOMMENDED PATTERN DIM.(REF.) 1 D J . 1 I I (3.5) s T T /f T IYI I M IYI I 1/ / 7~ A f it t in g 3 8 .7 3 4 ./ 33. / 3 2 ./ 3 1 ./ 30. / 29. / 2 8 ./ 2 /./ 2 6 ./ 2 5 ./ 2 4 ./


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    SD-47218-190 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 2300-2410 MHz J ■ ■ High Frequency Low Transient t t } ■ 38 Pin d ip MODEL NO. DPS52181 Phase Shifter 5 Section RF IN/OU T GND 38 - 37 Q 36 35 34 33


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    DPS52181 PDF

    cxd 158

    Abstract: F038 GMS34012
    Text: IC dependence of osc i11at ing character ist ics GMS34012 F0384M5 - S Room Temp. Udd CU] CL1/CL2 CpF] 3 item cfe 33 / 33 6MS34012 - CL F0384M5 Udd= 3 CUD CFig.cTd) Ta= 20 Cdeg] Typical o. U1H/U1L CU] 5 2.5 2.6 in C\J 3 -.2 • CUD -.2 -.2 i 2 2 U1H •= -


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    GMS348I2 F0384M5 GMS34012 GMS34812 cxd 158 F038 PDF

    philips carbon film resistor

    Abstract: 5043CX Bulk Carbon Film Fixed Resistor 5 Watt Resistors 2322 211 philips resistor 2322 philips carbon film resistors 2322 211 100R0 resistor 2322 series 2 watt carbon film resistor
    Text: Philips Components Product Specification Carbon Film Resistor .33 Watt 5% FEATURES 5043CX J 2322 211. QUICK REFERENCE DATA Low Cost Resistance Range 1S2 to 10 M£2; E24 Series DESCRIPTION Resistance Tolerance ± 5% Temperature Coefficient See Figure 4


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    5043CX. MIL-STD-202E, 5043CX 5043CX philips carbon film resistor Bulk Carbon Film Fixed Resistor 5 Watt Resistors 2322 211 philips resistor 2322 philips carbon film resistors 2322 211 100R0 resistor 2322 series 2 watt carbon film resistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3


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    2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 PDF

    2N6127

    Abstract: 2N6354 2N5007 2N6262 2N6350 2N6351 2N6352 2N6353 2N6383 2N6384
    Text: - 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VcBO VCEO (sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3


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    2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 2N6127 2N5007 PDF

    TO61 package

    Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
    Text: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3


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    2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6187 TO61 package TO111 package 2N6226 2N5007 PDF

    T1P50

    Abstract: transistors t1p50
    Text: PHILIPS INTERNATIONAL 45E D CI 711Qö2ti DQ31SMS h E3PHIN 11 TIP47; TIP48 J I TIP49; TIP50 r-33-// — SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-220 envelope for amplifier and switching applications.


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    DQ31SMS TIP47; TIP48 TIP49; TIP50 r-33-// TIP47 O-220AB, 711062b 00312MÖ T1P50 transistors t1p50 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1


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    GCm33SG BDV64F/64AF/64BF/64CF OT199 BDV65F/ 65AF/65BF/65CF. BDV64F BDV64AF BDV64BF BDV64CF PDF