Untitled
Abstract: No abstract text available
Text: NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01N
NTMFS4H01N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01N
NTMFS4H01N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01NF
NTMFS4H01NF/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01NF
NTMFS4H01NF/D
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Untitled
Abstract: No abstract text available
Text: Evaluation Board User Guide UG-334 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluation Board for the ADP1876 Step-Down DC-to-DC Controller FEATURES ADP1876 DEVICE DESCRIPTION
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UG-334
ADP1876
UG10272-0-11/11
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74AUC1G74
Abstract: EE-334 ADP2105 ADSP-BF531 ADSP-BF533 BF533 MAX6896 PF10
Text: Engineer-to-Engineer Note a EE-334 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail [email protected] or [email protected] for technical support.
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EE-334
ADSP-BF531/ADSP-BF532/ADSP-BF533
ADSP-BF533
EE-334)
74AUC1G74
EE-334
ADP2105
ADSP-BF531
BF533
MAX6896
PF10
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IRF5820
Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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4333A
IRF5804
OT-23.
IRF5820
IRF5800
IRF5804
SI3443DV
IRF5851
IRF5806
irf5852
sot-23 MARKING CODE 3d
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PDF
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IRF5820
Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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94333B
IRF5804
OT-23.
IRF5820
94333
IRF5800
IRF5804
SI3443DV
k 9632
sot-23 MARKING CODE 3d
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Untitled
Abstract: No abstract text available
Text: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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IRFP440
O-247
O-220
46554S2
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IRF5804PbF
Abstract: No abstract text available
Text: PD - 95503A IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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5503A
IRF5804PbF
OT-23.
IRF5804PbF
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sac 187
Abstract: D496 D505 VIV0102THJ
Text: VTM48EH015T050A00 VTM48EH015M050A00 Formerly VIV0102THJ VTM Transformer TM S C FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency (>89%) reduces system power consumption • High density (334 A/in3)
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VTM48EH015T050A00
VTM48EH015M050A00
VIV0102THJ)
sac 187
D496
D505
VIV0102THJ
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VIV0102THJ
Abstract: 217F D496 D505 VIV0102MHJ
Text: VIV0102THJ PRELIMINARY DATASHEET S C NRTL US VTM Transformer TM FEATURES • 38.4 Vdc – 1.2 Vdc 50 A Voltage Transformer - Operating from standard 48 V or 24 V PRMs • High efficiency >89% reduces system power consumption • High density (334 A/in3)
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VIV0102THJ
VIV0102THJ
217F
D496
D505
VIV0102MHJ
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IRf 334
Abstract: No abstract text available
Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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IRF5804PbF
OT-23.
IRf 334
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IRF5800
Abstract: IRF5804 IRF5850 SI3443DV
Text: PD - 94333 IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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IRF5804
IRF5800
IRF5804
IRF5850
SI3443DV
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Untitled
Abstract: No abstract text available
Text: VTM48EH015 x 050A00 Formerly VIV0102THJ VTM Current Multiplier TM S C FEATURES • 48 Vdc to 1.5 Vdc 50 A current multiplier - Operating from standard 48 V or 24 V PRM regulators • High efficiency (>89%) reduces system power consumption • High density (334 A/in3)
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VTM48EH015
050A00
VIV0102THJ)
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PDF
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Untitled
Abstract: No abstract text available
Text: VTM48EH015 x 050A00 Formerly VIV0102THJ VTM Current Multiplier S US C FEATURES • 48 Vdc to 1.5 Vdc 50 A current multiplier - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency (>89%) reduces system power consumption • High density (334 A/in3)
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VTM48EH015
050A00
VIV0102THJ)
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PDF
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Untitled
Abstract: No abstract text available
Text: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >90% reduces system power consumption • High density (334 A/in2) • “Half Chip” V• I Chip package enables surface mount,
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VIV0102THJ
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D496
Abstract: D505 VIV0102MHJ VIV0102THJ
Text: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >89% reduces system power consumption • High density (334 A/in3) • “Half Chip” V• I Chip package enables surface mount,
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VIV0102THJ
D496
D505
VIV0102MHJ
VIV0102THJ
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PDF
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Untitled
Abstract: No abstract text available
Text: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >90% reduces system power consumption • High density (334 A/in3) • “Half Chip” V• I Chip package enables surface mount,
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VIV0102THJ
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snubber resistance of IGBT
Abstract: snubber circuit for mosfet 104 K capacitor snubber capacitor mosfet protection circuit diagram 224 K capacitor igbt capacitor snubber
Text: SUPPRESSION CAPACITORS HCP-SSERIES SNUBBER CAPACITOR Features ・Resin-mode case, Small in size ・Inproved safty and suppressed self-hearting Application ・High frequency circuit, High voltage resonant circuit , Snubber circuit ・Protection of semiconductors such as IGBT, IPM and MOSFET.
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450VDC
1250VDC
001max
100Hz
25sec
50000Mmin
100VDC
20000Fmin
temperature-4085
1250Vd
snubber resistance of IGBT
snubber circuit for mosfet
104 K capacitor
snubber capacitor
mosfet protection circuit diagram
224 K capacitor
igbt capacitor snubber
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TA49235
Abstract: 20n03
Text: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V
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RFD20N03,
RFD20N03SM
TA49235.
TA49235
20n03
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TA9771
Abstract: buz11
Text: intelai I BUZ11 Data S heet Ju n e 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET F ile N u m b e r 2253.2 Features • 30A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ11
TA9771.
BUZ11
TA9771
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing
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95503B
IRF5804PbF
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68 UF 450V
Abstract: c 103 mosfet OKAYA 224 Okaya
Text: HCP-S SERIES CAPACiïOR @ OKAYA M Features • Compact size and resin case. • Improved safety and suppressing self-heating. Applications • High frequent circuit, High voltage resonant circuit, snubber circuit and Protection of semiconductors such as IGBT, IPM and MOSFET.
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100Hz)
68 UF 450V
c 103 mosfet
OKAYA 224
Okaya
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PDF
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