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Catalog Datasheet	MFG & Type	Document Tags	PDF
NDT454P Abstract: No abstract text available Text: National June 1996 Semiconductor" N D T454P P-Channel Enhancement M ode Field Effect Transistor General Description Features These P-Channel e n h a n ce m e n t m o d e e ffect tra n s is to rs p ro p rie ta ry , hig h are pro d u ce d cell d e nsity, using	OCR Scan	NDT454P NDT454P OT-223	PDF
NDT3055 Abstract: No abstract text available Text: t* September 1996 National Semiconductor" N D T3055 N-Channel Enhancement M ode Field Effect Transistor General Description Features P ow er SO T N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's	OCR Scan	NDT3055 NDT3055 OT-223	PDF
NDT453N Abstract: No abstract text available Text: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT453N NDT453N OT-223	PDF
NDT2955 SOT223 Abstract: NDT2955 E125 Text: September 1996 National Semiconductor" N D T2955 P-Channel Enhancement M ode Field Effect Transistor General Description Pow er SOT P -C h a n n e l Features power • -2 .5 A , -6 0 V . RDS 0N = 0 .3 £ i @ V GS = -1 0V. fie ld e ffe c t tr a n s is to r s a re p ro d u c e d u s in g N a tio n a l's	OCR Scan	NDT2955 OT-22rrent NDT2955 OT-223 NDT2955 SOT223 E125	PDF
NDT451N Abstract: No abstract text available Text: S e ptem be r 1996 National Semiconductor" N D T451N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	NDT451N NDT451N OT-223	PDF
34B SOT Abstract: NDT452P c3 sot223 Text: September 1996 National f i Semiconductor"' N D T452P P-Channel Enhancement M ode Field Effect Transistor G eneral Description Features P ow er SO T P-Channel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n sisto rs are pro d u ce d using N a tio n a l's	OCR Scan	NDT452P OT-223. NDT452P OT-223 34B SOT c3 sot223	PDF
FZ 300 R 06 KL Abstract: 34B SOT NDT410EL L-253 Text: August 1 996 National Semiconductor" N DT410EL N-Channel Logic Level Enhancement M ode Field Effect Transistor Features General Description Power SOT N-Channel logic level enhancem ent mode power field effect transistors are produced using N ational's proprietary, high cell density, DMOS	OCR Scan	NDT410EL NDT410EL OT-223 FZ 300 R 06 KL 34B SOT L-253	PDF
NDT3055L Abstract: 6SS4 NDT3055 Text: S e ptem be r 1996 N ational f Semiconductor"' i N D T3055L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancem ent m ode field effect transistors are produced using National's proprietary, high cell density, DMOS	OCR Scan	NDT3055L NDT3055L OT-223 6SS4 NDT3055	PDF
LAL 2.25 Abstract: NDT451 NDT451AN TRANSISTOR b72 Text: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's	OCR Scan	NDT451 NDT451AN OT-223 LAL 2.25 TRANSISTOR b72	PDF