Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    34DBC Search Results

    SF Impression Pixel

    34DBC Price and Stock

    Sullins Connector Solutions PEC34DBCN

    CONN HEADER R/A 68POS 2.54MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PEC34DBCN Bulk 1
    • 1 $6.2
    • 10 $5.056
    • 100 $6.2
    • 1000 $4.0601
    • 10000 $4.0601
    		Buy Now

    Sullins Connector Solutions PTC34DBCN

    CONN HEADER R/A 68POS 2.54MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTC34DBCN Bulk 1
    • 1 $6.31
    • 10 $5.647
    • 100 $6.31
    • 1000 $3.15541
    • 10000 $2.7679
    		Buy Now

    Panasonic Electronic Components ERA-3AEB6340V

    Thin Film Resistors - SMD 0603 634ohm 0.1% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ERA-3AEB6340V Reel 5,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0294
    		Buy Now

    34DBC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAMO-000900-1291HT

    Abstract: MAMO-000900-1291MT
    Text: MAMO-00900-1291HT I/Q Modulator/Demodulator 850-960 MHz Rev. V3 Features • • • • • • • Excellent Carrier Suppression ~34dBc 6.0 dB Typical Modulator Conversion Loss +17 to +20 dBm LO Drive High 3x1 and 5x1 Harmonic Suppression No External Matching Required


    Original     		PDF MAMO-00900-1291HT 34dBc MAMO-000900-1291HT 28lead MAMO-000900-1291MT

    Untitled

    Abstract: No abstract text available
    Text: 2nd 3rd Harmonic vs Pout MAX3509 22MHz 2:1 Pin=33,34,35dBmV 70 65 60 dBc 55 34dBc2 34dBc3 35dBc2 35dBc3 33dBc2 33dBc3 50 45 40 35 30 57 58 59 60 61 62 63 64 Pout dBmV 65 66 67 68 69 70 71


    Original     		PDF MAX3509 22MHz 35dBmV 34dBc2 34dBc3 35dBc2 35dBc3 33dBc2 33dBc3

    MAX2150

    Abstract: MAX2150ETI J103 transistor 3 pin cpx 1uF TEW 20MHZ Crystal
    Text: 19-2389; Rev 0; 4/02 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Features ♦ Single Voltage Supply 2.7V to 3.6V The device typically achieves 34dBc of carrier and sideband suppression at a -1dBm output level. The wideband, internally matched RF output can also


    Original     		PDF 34dBc 28-pin 75MHz 700MHz 2300MHz 100mHz MAX2150 MAX2150ETI J103 transistor 3 pin cpx 1uF TEW 20MHZ Crystal

    MAX2150

    Abstract: TCXO 40MHz TEW 20MHZ Crystal MAX2150ETI wideband DAC modulator 2.5 GHz
    Text: 19-2389; Rev 1; 8/03 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Features ♦ Single Voltage Supply 2.7V to 3.6V The device typically achieves 34dBc of carrier and sideband suppression at a -1dBm output level. The wideband, internally matched RF output can also


    Original     		PDF 34dBc 28-pin 75MHz 700MHz 2300MHz 100mHz MAX2150 TCXO 40MHz TEW 20MHZ Crystal MAX2150ETI wideband DAC modulator 2.5 GHz

    Untitled

    Abstract: No abstract text available
    Text: 2nd 3rd Harmonics vs. Pout MAX3509 65MHz 2:1 Pin=33, 34, 35dBmV 70 65 60 dBc 55 34dBc2 34dBc3 33dBc2 33dBc3 35dBc2 35dBc3 50 45 40 35 30 57 58 59 60 61 62 63 64 Pout dBmV 65 66 67 68 69 70 71


    Original     		PDF MAX3509 65MHz 35dBmV 34dBc2 34dBc3 33dBc2 33dBc3 35dBc2 35dBc3

    ic 4800b

    Abstract: 4800b max 4800b smd ic 4800b transistor circuit diagram of 4800b 4800b ic 4800B smd 4800B POWER IC max 4800b CIRCUIT 4800b
    Text: TSH690 40MHz to 1GHz AMPLIFIER • ■ ■ ■ ■ ■ ■ Supply voltage: 1.5V to 5V >20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down PACKAGE


    Original     		PDF TSH690 40MHz TSH690 ic 4800b 4800b max 4800b smd ic 4800b transistor circuit diagram of 4800b 4800b ic 4800B smd 4800B POWER IC max 4800b CIRCUIT 4800b

    QFN-48 pin 49

    Abstract: No abstract text available
    Text: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with


    Original     		PDF MAX2369 G4877 21-0092H G4877-1* QFN-48 pin 49

    UMLC1111B

    Abstract: UMLC1-111B UMLC1
    Text: 中国3G TD-SCDMA用 RF模块 UMLC1-111B ! 0.18ml微型模块将推进 世界首创 中国的 3G。 13mm W: 9mm D: 1.5mm H: 采用仿真技术对配套IC进行了优化，能控制散差，发挥稳定的性能。 ●适应3GPP TS25.102 Power Class 2（+24dBm）。


    Original     		PDF UMLC1-111B 24dBm 2010MHz 2025MHz -38dBc -34dBc UMLC1111B UMLC1-111B UMLC1

    ic 4800b

    Abstract: 4800B max 4800b smd ic 4800b ic 4800b transistor 4800B datasheet circuit diagram of 4800b max 4800b 4800B smd 4800B datasheet smd
    Text: TSH690 40MHz to 1GHz AMPLIFIER • ■ ■ ■ ■ ■ ■ Supply voltage: 1.5V to 5V >20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down PACKAGE DESCRIPTION


    Original     		PDF TSH690 40MHz TSH690 ic 4800b 4800B max 4800b smd ic 4800b ic 4800b transistor 4800B datasheet circuit diagram of 4800b max 4800b 4800B smd 4800B datasheet smd

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    CA942

    Abstract: 48V dc supply GSM LNA LINE FILTER FOR 900MHZ GSM900 base station high power amplifier Filtronic comtek
    Text: CA942 GSM900, 6 Channel In-Line Uplink Enhancer FEATURES • High linearity • Low noise contribution • High reliability • High return loss • Available as RoHS compliant Inspired Wireless Solutions BENEFITS • Reduces dropped calls in rural areas by


    Original     		PDF CA942 GSM900, CA942 900MHz 48V dc supply GSM LNA LINE FILTER FOR 900MHZ GSM900 base station high power amplifier Filtronic comtek

    AN1737

    Abstract: APP1737 MAX2510 MAX5183 i q modulator
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, wireless, modulator, if, lo, dac, rfic, rf ics Sep 19, 2002 APPLICATION NOTE 1737 MAX2510 I/Q Modulator Performance In The Presence of DC Offset Voltages Abstract: RF systems which require direct coupling between the baseband output DAC and the input to the I/Q


    Original     		PDF MAX2510 com/an1737 MAX2510: MAX5183: AN1737, APP1737, Appnote1737, AN1737 APP1737 MAX5183 i q modulator

    8593E

    Abstract: AN0001 AN1892 RF2422
    Text: AN0001 15 AN0001 Optimization of Quadrature Modulator Performance Optimization of Quadrature Modulator Performance Introduction Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,


    Original     		PDF AN0001 RF2422. RF2422 AN1892, 8593E AN0001 AN1892 RF2422

    Untitled

    Abstract: No abstract text available
    Text: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7011 FEATURES Single Chip Low Power UHF Transmitter Frequency Band 433 MHz to 435 MHz 868 MHz to 870 MHz On-Chip VCO and Fractional-N PLL 2.3 V to 3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps


    Original     		PDF ADF7011 24-Lead ADF7011 1184MHz 84MHZ RU-24) MO-153AD

    031pf

    Abstract: No abstract text available
    Text: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with


    Original     		PDF MAX2369 MAX2369 031pf

    le817

    Abstract: DB4 antenna uhf CRYSTAL 22.1184 DFCB2869MLEJAA-TT1 UHF DETECTOR F1-F11 sharp UHF modulator 433mhz rf power amplifier 500 mw 42368 ADF7011BRU-REEL
    Text: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7011 FEATURES Single Chip Low Power UHF Transmitter Frequency Band 433 MHz to 435 MHz 868 MHz to 870 MHz On-Chip VCO and Fractional-N PLL 2.3 V to 3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps


    Original     		PDF ADF7011 24-Lead ADF7011 24-bit DFCB2869MLEJAA-TT1 1184MHz 84MHZ Diagram--868 le817 DB4 antenna uhf CRYSTAL 22.1184 DFCB2869MLEJAA-TT1 UHF DETECTOR F1-F11 sharp UHF modulator 433mhz rf power amplifier 500 mw 42368 ADF7011BRU-REEL

    AN1997

    Abstract: APP1997 MAX2510
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Apr 28, 2003 Keywords: rf, phs, transceiver, wireless, rfic, spectrum APPLICATION NOTE 1997 500mW PHS Transmitter Meets Transient Spectrum Requirements with Edge Control Abstract: If the control signal's transition time is not controlled, the output spectrum of a 500mW PHS base


    Original     		PDF 500mW MAX2510, MAX2510 200mW com/an1997 MAX2510: AN1997, APP1997, AN1997 APP1997

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    IEC802

    Abstract: 188g
    Text: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with


    Original     		PDF MAX2369 MAX2369 IEC802 188g

    MAX2150

    Abstract: MAX2150ETI J1014 TEW 20MHZ Crystal
    Text: 19-2389; Rev 4; 6/08 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer The MAX2150 is a complete wideband direct upconversion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is targeted for applications in the 700MHz to 2300MHz frequency range.


    Original     		PDF MAX2150 28-bit 700MHz 2300MHz 50mHz 10MHz MAX2150 MAX2150ETI J1014 TEW 20MHZ Crystal

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    MAX2150

    Abstract: MAX2150ETI J1017
    Text: 19-2389; Rev 3; 3/06 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer The MAX2150 is a complete wideband direct upconversion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is targeted for applications in the 700MHz to 2300MHz frequency range.


    Original     		PDF MAX2150 28-bit 700MHz 2300MHz 50mHz 10MHz MAX2150ETI J1017

    Untitled

    Abstract: No abstract text available
    Text: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7010 a FEATURES Single Chip Low Power UHF Transmitter 902 MHz–928 MHz Frequency Band On-Chip VCO and Fractional-N PLL 2.3 V–3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps


    Original     		PDF ADF7010 24-Lead ADF7010 24-bit C03143â RU-24) MO-153AD

    bsim3 model

    Abstract: 1000 watt power supply scheme class E power amplifier Class E amplifier capacitor huang bsim3 ADS GSM Transceiver chip single transistor amplifier circuits bsim3 27 Mhz power amplifier
    Text: Chapter 6 CMOS Class-E Power Amplifier 6.0 Introduction Last few years have seen an increase in the popularity of the wireless communication systems. As a result, the demand for compact, low-cost, and low power portable transceivers has increased dramatically [Gray and Meyer, 1995]. A proposed


    Original     		PDF