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    5STP34N5200

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.160 mΩ Ω Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 34N5200 5SYA1002-03 34N5200 34N5000 34N4600 CH-5600 5STP34N5200

    34N50

    Abstract: TQ 5100
    Text: Key Parameters VDSM = 5200 ITAVM = 3350 ITRMS = 5250 ITSM = 55000 VT0 = 1.03 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA 1002-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 34N5200 34N5200 34N5000 34N4600 67xVDRM CH-5600 34N50 TQ 5100

    Untitled

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.16 mΩ Ω Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 34N5200 5SYA1002-03 34N5200 34N5000 34N4600 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDSM = 5200 V ITAVM = 3600 A ITRMS = 5650 A ITSM = 55000 A VT0 = 1.03 V rT = 0.160 mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 5SYA1002-03 34N5200 34N5200 34N5000 34N4600 67xVDRM 11ing CH-5600