k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
|
PDF
|
IS46TR
Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
60A/AL
78-ball
IS46TR
IS43TR82560A
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
"2Gb DDR3 SDRAM"
|
PDF
|
K4B4G0846C
Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B4G0446C
K4B4G0846C
78FBGA
K4B4G0846C
K4B4G0846C-BCMA
K4B4G0446C-BCK0
DDR3-1866
|
PDF
|
K4B4G0846B-HYK0
Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Text: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HYK0
K4B4G0846B-HYH9
K4B4G0446B-HYK0
K4B4G0446B-HYH9
09 06 115 2932
|
PDF
|
K4B4G0846a
Abstract: No abstract text available
Text: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B4G0446A
K4B4G0846A
78FBGA
K4B4G0846a
|
PDF
|
k4b2g0446d-hyh9
Abstract: No abstract text available
Text: Rev. 1.01, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B2G0446D
K4B2G0846D
78FBGA
k4b2g0446d-hyh9
|
PDF
|
K4B1G1646G
Abstract: K4B1G1646G-BI samsung dimm DDR3 SPD k4b1g1646g
Text: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B1G1646G
K4B1G1646G
K4B1G1646G-BI
samsung dimm DDR3 SPD k4b1g1646g
|
PDF
|
K4B2G1646B
Abstract: Samsung 2GB DDR3 K4B2G1646B-HI
Text: industrial 2Gb DDR3 SDRAM K4B2G1646B 2Gb B-die DDR3 SDRAM Specification 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant Industrial Temp. -40 to 95°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
|
Original
|
K4B2G1646B
K4B2G1646B
Samsung 2GB DDR3
K4B2G1646B-HI
|
PDF
|
M471B2874DZ1
Abstract: ddr3 udqs K4B1G0846D
Text: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb D-die 64-bit Non-ECC RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
204pin
64-bit
K4B1G1646D
128Mbx8
256Mx64
K4B1G0846D
M471B2874DZ1
ddr3 udqs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Unbuffered DIMM DDR3 SDRAM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb D-die 64/72-bit Non-ECC/ECC 82FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
|
Original
|
240pin
64/72-bit
82FBGA
K4B1G0846D-HC
128Mbx8
256Mx64/x72
|
PDF
|
K4B1G0846G-BYH9
Abstract: No abstract text available
Text: Rev. 1.03, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3L SDRAM 78 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B1G0446G
K4B1G0846G
K4B1G0846G-BYH9
|
PDF
|
K4B2G0846D
Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
Text: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B2G0446D
K4B2G0846D
78FBGA
K4B2G0846D
K4B2G0846D-HCK0
k4b2g0846
K4B2G0846D-HCMA
K4B2G0446D-HCH9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A,
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
1600MT/s
IS43TR81280AL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16128A,
IS43/46TR16128AL,
IS43/46TR82560A,
IS43/46TR82560AL
256Mx8,
128Mx16
cycles/64
cycles/32
1333MT/s
IS46TR82560AL
|
PDF
|
|
samsung ddr3
Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
Text: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
|
Original
|
K4B1G04
samsung ddr3
DDR3 DIMM 240 pinout
DDR3-1066
DDR3-1333
K4B1G16
Design Guide for DDR3-1066
k4b1g08
K4B1G0846D
K4B1G0446D
DDR3-800-666
|
PDF
|
DDRL3-1600
Abstract: K4B4G0846A DDR3L K4B4G0846A-HYH9 512Mx8 k4b4g0846a-hyf8 78FBGA K4B4G0446A DDRL3-1333 K4B4G0846
Text: Rev. 1.01, Nov. 2010 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B4G0446A
K4B4G0846A
78FBGA
DDRL3-1600
K4B4G0846A
DDR3L
K4B4G0846A-HYH9
512Mx8
k4b4g0846a-hyf8
K4B4G0446A
DDRL3-1333
K4B4G0846
|
PDF
|
k4b1g1646e
Abstract: 96-FBGA k4b1g1646 DDR3 1gb DDR3 DIMM 240 pinout AC150 DDR3-1333 JESD51-2
Text: industrial 1Gb DDR3 SDRAM K4B1G1646E 1Gb E-die DDR3 SDRAM Specification 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant Industrial Temp. -40 to 95°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
|
Original
|
K4B1G1646E
k4b1g1646e
96-FBGA
k4b1g1646
DDR3 1gb
DDR3 DIMM 240 pinout
AC150
DDR3-1333
JESD51-2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.01, Mar. 2012 K4B2G0446E K4B2G0846E 2Gb E-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B2G0446E
K4B2G0846E
78FBGA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •
|
Original
|
IS43/46TR16256A,
IS43/46TR16256AL,
IS43/46TR85120A,
IS43/46TR85120AL
512Mx8,
256Mx16
cycles/64
cycles/32
IS46TR85120AL
-15HBLA2
|
PDF
|
K4B4G0846B-HCK0
Abstract: K4B4G0846B-HCH9 K4B4G0446B-HCK0 K4B4G0846B-HCMA K4B4G0846B K4B4G0446B-HCH9 4Gb DDR3 SDRAM K4B4G0846B-H DDR3-2133 DDR3-1066
Text: Rev. 1.2, Jul. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B4G0446B
K4B4G0846B
78FBGA
K4B4G0846B-HCK0
K4B4G0846B-HCH9
K4B4G0446B-HCK0
K4B4G0846B-HCMA
K4B4G0846B
K4B4G0446B-HCH9
4Gb DDR3 SDRAM
K4B4G0846B-H
DDR3-2133
DDR3-1066
|
PDF
|
IS43TR16640A
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •
|
Original
|
IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
switch-15GBLA1
IS46TR81280A
IS43TR16640A
|
PDF
|
JESD79-3E
Abstract: K4B2G0846C-HCK0 K4B2G0846C K4B2G0846C-HCH9 K4B2G0446C AC175 K4B2G0446C-HCK0 K4B2G0446C-HCH9 K4B2G0446 DDR3-1066
Text: Rev. 1.31, Nov. 2010 K4B2G0446C K4B2G0846C 2Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B2G0446C
K4B2G0846C
78FBGA
JESD79-3E
K4B2G0846C-HCK0
K4B2G0846C
K4B2G0846C-HCH9
K4B2G0446C
AC175
K4B2G0446C-HCK0
K4B2G0446C-HCH9
K4B2G0446
DDR3-1066
|
PDF
|
DIODE 248
Abstract: No abstract text available
Text: CRD1616-8W CRD1616-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1616-8W reference design demonstrates the performance of the CS1616 single stage dimmable AC/DC LED driver IC with a 250mA output driving 10 LEDs in
|
Original
|
CRD1616-8W
CRD1616-8W
CS1616
250mA
207VAC
253VAC
CS1616
DS1003RD4
DIODE 248
|
PDF
|
K4B2G1646B-HCH9
Abstract: "2Gb DDR3 SDRAM" k4B2G1646 k4b2g1646b 128mx16 ddr3 K4B2G0846B-HCH9 samsung DDR3 SDRAM 2GB K4B2G16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA K4B2G0846B-HCF7
Text: 2Gb DDR3 SDRAM K4B2G04 08/16 46B 2Gb B-die DDR3 SDRAM Specification 78 / 96 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
|
Original
|
K4B2G04
K4B2G1646B-HCH9
"2Gb DDR3 SDRAM"
k4B2G1646
k4b2g1646b
128mx16 ddr3
K4B2G0846B-HCH9
samsung DDR3 SDRAM 2GB
K4B2G16
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
K4B2G0846B-HCF7
|
PDF
|