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    35 MICRO-X 20GHZ GAAS Search Results

    35 MICRO-X 20GHZ GAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    35 MICRO-X 20GHZ GAAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier Package: Die, 2.2mm x 1.45mm x 0.102mm RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a wide array of high frequency commercial, military, and space applications. They


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    PDF SDA-5000 102mm SDA-5000 35GHz 17dBm 100mA DS140210

    Untitled

    Abstract: No abstract text available
    Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a


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    PDF SDA-5000 45mmx0 102mm SDA-5000 35GHz 17dBm 100mA 35GHz, SDA5000SB

    Untitled

    Abstract: No abstract text available
    Text: RFSW2040D RFSW2040D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2040D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m


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    PDF RFSW2040D 25GHz 25GHz RFSW2040D 20GHz 22-A114. MIL-STD-1686

    JESD22-A114

    Abstract: SDA5000 SDA-5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier
    Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a


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    PDF SDA-5000 45mmx0 102mm SDA-5000 17dBm 100mA 35GHz, SDA5000SB DS091021 JESD22-A114 SDA5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier

    RFSW2040D

    Abstract: RFSW-2040
    Text: RFSW2040D RFSW2040D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2040D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m


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    PDF RFSW2040D 25GHz RFSW2040D 20GHz 22-A114. MIL-STD-1686 RFSW-2040

    Untitled

    Abstract: No abstract text available
    Text: SUF-1000 SUF-1000DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Die, 0.88mm x 0.75mm Product Description Features RFMD’s SUF-1000 is a monolithically matched high IP3 broadband pHemt MMIC amplifier. The self-biased direct-coupled topology provides exceptional cascadable performance from DC to 20GHz. Its efficient operation


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    PDF SUF-1000 SUF-1000DC 20GHz, SUF-1000 20GHz. 14dBm DS120220

    Untitled

    Abstract: No abstract text available
    Text: SUF-1000 SUF-1000DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Die, 0.88mm x 0.75mm Product Description Features RFMD’s SUF-1000 is a monolithically matched high IP3 broadband pHemt MMIC amplifier. The self-biased direct-coupled topology provides exceptional cascadable performance from DC to 20GHz. Its efficient operation


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    PDF SUF-1000 SUF-1000DC 20GHz, SUF-1000 20GHz. 14dBm DS120220

    Untitled

    Abstract: No abstract text available
    Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It


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    PDF SUF-1033DC 20GHz, SUF-1033 16-Pin, SUF-1033 20GHz. DS120301 SUF-1033SB

    Untitled

    Abstract: No abstract text available
    Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It


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    PDF SUF-1033 SUF-1033DC 20GHz, 16-Pin, SUF-1033 20GHz. 14dBm DS120531

    Untitled

    Abstract: No abstract text available
    Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It


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    PDF SUF-1033DC 20GHz, SUF-1033 16-Pin, SUF-1033 20GHz. DS120531 SUF-1033SB

    Untitled

    Abstract: No abstract text available
    Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: QFN, 16-Pin, 3mm x 3mm Product Description Features Gain and Return Loss versus Frequency VDD = 5V, RBIAS = 33Ƙ Optimum Technology


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    PDF SUF-1033 SUF-1033DC 20GHz, 16-Pin, 14dBm SUF-1033SB SUF-1033SQ 25-piece

    Untitled

    Abstract: No abstract text available
    Text: SUF-1033 SUF-1033DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It


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    PDF SUF-1033DC 20GHz, SUF-1033 16-Pin, SUF-1033 20GHz. 14dBm DS120220

    Untitled

    Abstract: No abstract text available
    Text: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s


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    PDF FMA3007 20GHZ 15mmx1 FMA3007 17dBm -13dB -11dB FMA3007-000

    Untitled

    Abstract: No abstract text available
    Text: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB


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    PDF RFUV1003 12GHZ 16GHZ 32-Pin, 12GHz to16GHz 20GHz -10dB 28dBm

    RFUV1003

    Abstract: RFUV1003PCK-410 rfuv-1003
    Text: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB


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    PDF RFUV1003 12GHZ 16GHZ 32-Pin, to16GHz 20GHz -10dB 28dBm RFUV1003 RFUV1003PCK-410 rfuv-1003

    CGY2108GS

    Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
    Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services


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    PDF 500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2

    GRM36

    Abstract: HK1005 HK1608 NJG1715KC1 2140MHz
    Text: NJG1715KC1 W-CDMA FRONT-END GaAs MMIC for W-CDMA n GENERAL DESCRIPTION n PACKAGE OUTLINE The NJG1715KC1 is a front-end GaAs MMIC including a LNA, a mixer with a local amplifier. The main application is front-end of W-CDMA cellular phone handsets. The NJG1715KC1 features low noise figure, high gain and


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    PDF NJG1715KC1 NJG1715KC1 FLP10 FLP10-C1 GRM36 HK1005 HK1608 2140MHz

    FR-4 frequency responce

    Abstract: 2520M GRM36 HK1005 HK1608 NJG1715KC1 C2120O LNA mark L3
    Text: NJG1715KC1 W-CDMA 用フロントエンド GaAs MMIC •概要 NJG1715KC1 は低雑音増幅器とローカルアンプ内蔵ミ キサーを複合化した低雑音、高利得、高 IP3 のフロントエ ンド GaAs MMIC で、W-CDMA 携帯端末での使用を主用途


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    PDF NJG1715KC1 FLP10-C1 2140MHz 2140MHz, 2520MHz, -10dBm FR-4 frequency responce 2520M GRM36 HK1005 HK1608 NJG1715KC1 C2120O LNA mark L3

    CC45T47K240G5C2

    Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
    Text: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB


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    PDF AMMC-5024 30KHz AMMC-5024 40GHz AV02-0704EN CC45T47K240G5C2 Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP

    XC-0900-03S

    Abstract: GSM-710 R-GSM-900 s41 230 CWPG ALM-1522 GSM-850 P-GSM-900 FR4 substrate 10GHz T-GSM-810
    Text: ALM-1522 Low Noise High Gain, High Linearity Balanced LNA Module for 800MHz to 1.0GHz Application Note 5419 Introduction Avago Technologies’ ALM-1522 is a very low noise, high gain and high linearity dual amplifier module, operating from 800MHz to 1.0GHz. In the balanced configuration, the measured performances on the demonstration


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    PDF ALM-1522 800MHz ALM-1522 900MHz 43dBm 28dBm ALM-1222 ALM-1322 XC-0900-03S GSM-710 R-GSM-900 s41 230 CWPG GSM-850 P-GSM-900 FR4 substrate 10GHz T-GSM-810

    transistor d90 smd

    Abstract: Type NS ceramic cap MIL-PRF-49464 F25CG0R2M1PX3 G10XXKITAPX05 bd-bj gap capacitors N220 P105 C11AH
    Text: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of


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    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


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    PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    dfb activation energy

    Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
    Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a


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    PDF ODE-408-001I HL1570AF HL1569AF dfb activation energy "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G

    s11 021t

    Abstract: PCAA041B RG1005 1005 Series samyoung "Humidity Sensor" Susumu RG series part Marking ps1608G PCAA031 SUSUMU RP Susumu RL series part Marking CYNTEC 25201B
    Text: Rev.2009 Susumu World Group Companies About the Susumu Group S usumu was established in 1964 as a pioneer to mass produce thin film components for general purposes. For forty years Susumu has been continuously supplying thin film resistors to computer, telecommunication, peripheral, test equipment, automotive,


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