35-E 20V Search Results

35-E 20V Result Highlights (5)

Part	Manufacturer	Description
RAA2142204GP3#JA0	Renesas Electronics Corporation	20V, 150mA Linear Regulator
RAA2142504GSP#HA0	Renesas Electronics Corporation	20V, 500mA Linear Regulator
RAA2142504GNP#HC0	Renesas Electronics Corporation	20V, 500mA Linear Regulator
2SJ647-T1-A	Renesas Electronics Corporation	Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70
UPA1952TE-T1-AT	Renesas Electronics Corporation	Pch Dual Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95

35-E 20V Price and Stock

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Cincon Electronics Corporation TRG30R120V-35E03-GY-BK-Level-VI Wall Mount AC Adapters Switching Adapter, Level VI, Wallmount, 30 Watt, 90-264VAC Input, 12VDC Output, 4x1.7x9.5mm, Straight, 57.6mm Grey Case, DC Cable 1800mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TRG30R120V-35E03-GY-BK-Level-VI					1 $21.24 10 $20.25 100 $18.43 1000 $17.96 10000 $17.96	Get Quote
Cincon Electronics Corporation TRG30RA120V-35E03-GY-BK-Level-VI Wall Mount AC Adapters Switching Adapter, Level VI, Wallmount, 30 Watt, 90-264VAC Input, 12VDC Output, 4x1.7x9.5mm, Straight, 61.98mm Grey Case, DC Cable 1800mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TRG30RA120V-35E03-GY-BK-Level-VI					1 $21.24 10 $20.25 100 $18.43 1000 $17.96 10000 $17.96	Get Quote

35-E 20V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: B A N D S W I T C H I N G & VA R I - C A P D I O D E S HIGH FREQUENCY BAND SWITCHING DIODES Type Reverse Voltage max Volts SOD123 PACKAGE BA782 35 BA783 35 SOD323 PACKAGE BA782S 35 BA783S 35 Forward Forward Current Voltage at Drop Ta = 25˚C at IF = 100mA	Original	100mA OD123 BA782 BA783 OD323 BA782S BA783S availab30 BB721 BB729	PDF
VN0540 Abstract: No abstract text available Text: VN0540 E – ET L O S B O – VN0535 VN0540 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 350V 35Ω 250mA VN0535N2 VN0535N3 VN0535ND 400V 35Ω 250mA —	Original	VN0540 VN0535 VN0540 250mA 250mA VN0535N2 VN0535N3 VN0540N3 VN0535ND VN0540ND	PDF
Untitled Abstract: No abstract text available Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7613DN 2002/95/EC Si7613DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7613DN 2002/95/EC Si7613DN-T1-GE3 11-Mar-11	PDF
Si7613DN-T1-GE3 Abstract: TB-17 si7613 Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7613DN 2002/95/EC Si7613DN-T1-GE3 18-Jul-08 TB-17 si7613	PDF
Untitled Abstract: No abstract text available Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7613DN 2002/95/EC Si7613DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+ 105° case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 FC04-035	PDF
MGDT35HCF Abstract: No abstract text available Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 MGDT35HCF	PDF
MGDT35HCF Abstract: FC045 MGDB-35-H-F MIL-STD-810D 516.3 MGDT-35-H-CE MGDB-35 MGDS-35-H-F mgdm-35 MGDS-35-H Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 MGDT35HCF FC045 MGDB-35-H-F MIL-STD-810D 516.3 MGDT-35-H-CE MGDB-35 MGDS-35-H-F MGDS-35-H	PDF
Untitled Abstract: No abstract text available Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 FC04-035	PDF
rU51 Abstract: No abstract text available Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 rU51	PDF
FGDS-2A-50V Abstract: No abstract text available Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 FGDS-2A-50V	PDF

MGDB-35-H-F Abstract: No abstract text available Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1 500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case	Original	MGDM-35 28Vdc MIL-STD-740A/D/E/F MGDM-35 MGDB-35-H-F	PDF
Untitled Abstract: No abstract text available Text: S T S 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID 20V 6A S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max 35 @ V G S = 4.5V	Original	2300S OT-23 OT-23	PDF
2300SA Abstract: No abstract text available Text: S T S 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID 20V 6A R DS ON S uper high dense cell design for low R DS (ON). ( m W ) Max 35 @ V G S = 4.5V R ugged and reliable.	Original	2300S OT-23 OT-23 2300SA	PDF
GE SCR 241 Abstract: C141C C144 2N3658 C141A 2N3649-53 C141D C144S C34B C34D Text: INVERTER SGR’s MEDIUM CURRENT 25 TO 35 AMPERES C138 1 C 139 C144 GE TYPE C34 C140 C141 JE D E C — 2N 3649-53 2 N 3654-58 50-500 50-400 5 0-40 0 500-800 500*800 500-1000 25 35 35 35 35 35 1 KHz 25 26 26 26 26 35 5KHz . 26 26 22 22 32 18 30 — — —	OCR Scan	2N3649-53 2N3654-58 10KHz C140F 2N3649 C141F 2N3654 C140A 2N3650 C141A GE SCR 241 C141C C144 2N3658 C141D C144S C34B C34D	PDF
GE c35d Abstract: GE c35s c35f C38F c35e C35M 2N682 2N683 C35U c231 Text: - C230-2 C231-3 - C228-9 C35 C 38 - C137 2N 681-92* - _ 2N3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B ° C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 300 GE TYPE JEDIEC E LEC TR IC A L SPECIFICATIONS	OCR Scan	c230-2 c231-3 c228-9 2n3870-3 2n5204-7 ENT11 GE c35d GE c35s c35f C38F c35e C35M 2N682 2N683 C35U c231	PDF
HARRIS / HA1 Abstract: HA-5222 A5E8 Text: - 128 - HA-5222 HARRIS M S E E : 0 . 3mVtyp • A Vs=±15V 4nV /VH z tx / v - w — H A -5 2 2 2 -9 • ft Ta=25°C 35 35 V A / / V H S ilA ^ f f l 5 5 V ft ft ft -9:-40—-85, -5:0—^+75 -9:-40— 85.-5:0^75 V / / mW j J l E • t i S * f l i ^ : + 56nA	OCR Scan	-HA-5222 HA-5222â AtlM77M. HA7-5222 CL-50pF 40DkHz 100mV, HARRIS / HA1 HA-5222 A5E8	PDF
CY7C182 Abstract: No abstract text available Text: CYPRESS SE MI CON DUCTOR 4fc,E D E3 2 5 0 ^ 2 D00bS7S 3 ESCYP CY7C182 CYPRESS SEMICONDUCTOR Features Functional Description • Fast access time — Commercial: 25/35/45 us max. — Military! 35/45/55 ns (max.) • Low power consumption — Active: 770 m ff (max.)	OCR Scan	CY7C182 300-mil-widih CY7C182 CY7C182, CY7C182-12DC CY7C182-12PC CY7C182- CY7C182-12DMB CY7C182-12LMB CY7C182â	PDF
Untitled Abstract: No abstract text available Text: ill h a r fr is W DG411, DG412 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches November 1994 Description Features • ON-Resistance <35£l Max • Low Power Consumption P0 <35\|iW • Fast Switching Action • ton <175ns ■ tgpp <145ns	OCR Scan	DG411, DG412 175ns 145ns 175ns) DG211 DG212. DG211/DG212 DG411 M3DSE71	PDF
Untitled Abstract: No abstract text available Text: BAT18 y v SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Forward current d.c. Junction temperature Vr max. 35 V •f	OCR Scan	BAT18 OT-23. 7ZO0998 7Z08997	PDF
6 volt npn Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450 Text: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100	OCR Scan	2N2218/21 2N2218A/21A 2N2219/22 2N2219A/22A DN2219A/22A 150mA 100KHz 100MH; 100mA 100mA 6 volt npn DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450	PDF

35-E 20V Search Results

35-E 20V Result Highlights (5)

35-E 20V Price and Stock

Cincon Electronics Corporation TRG30R120V-35E03-GY-BK-Level-VI

Cincon Electronics Corporation TRG30RA120V-35E03-GY-BK-Level-VI

35-E 20V Datasheets Context Search

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VN0540

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Si7613DN-T1-GE3

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MGDT35HCF

MGDT35HCF

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rU51

FGDS-2A-50V

MGDB-35-H-F

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2300SA

GE SCR 241

GE c35d

HARRIS / HA1

CY7C182

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6 volt npn