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    350V TRANSISTOR NPN 15A Search Results

    350V TRANSISTOR NPN 15A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    350V TRANSISTOR NPN 15A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJ13332

    Abstract: No abstract text available
    Text: tSztnL-donauctoi , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ13332 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEO(sus) = 350V(Min) • High Switching Speed


    Original     		MJ13332 100kHz MJ13332 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY SPT6060/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • High Voltage Rating - 350V Sustaining


    Original     		SPT6060/3 10ADC 15ADC 20ADC 10ADC, 20ADC, 10VDC, PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 BDY47 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 350V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ lc = 15A


    Original     		BDY47 PDF

    la 440 ic

    Abstract: 10ADC
    Text: SPT6060/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • High Voltage Rating - 350V Sustaining Fast Switching Capabilities / Fast Turn-off Time


    Original     		SPT6060/3 Curr60 10ADC, 20ADC, 10VDC, 150VDC la 440 ic 10ADC PDF

    NPN Transistor 15A 400V to3

    Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
    Text: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available


    OCR Scan     		305mm) JAN2N6546, 2N6547. 2N6561, 2N6563, SDT13301-SDTI3305 NPN Transistor 15A 400V to3 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 transistor 500v 0.5a transistor npn 10mhz 500v S65C PDF

    SDT55456

    Abstract: SDT55472 SDT55560 to63 400v
    Text: Devices. Inc VERY HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:


    OCR Scan     		PDF

    seme

    Abstract: BUL58A
    Text: SEME BUL58A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


    Original     		BUL58A seme BUL58A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL58A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


    Original     		BUL58A PDF

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = IN I BUL58A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		BUL58A T0220 PDF

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    LT 5247

    Abstract: LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241
    Text: TE XA S IN S T R { O PT O} 8961726 TEXAS bÊ IN STR Î F | ÒTbl72Li □□ 3b clfl5 0 6 2C OPTO) 36982 D TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 100° C Case Temperature


    OCR Scan     		Tbl72Li TIP660, TIP661, TIP662 T-33-29 LT 5247 LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241 PDF

    JAN2N3846

    Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
    Text: jg m m ^alîtran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER FORMERLY 14 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		305mm) JAN2N3846 JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v PDF

    350V transistor npn 15a

    Abstract: 300V transistor npn 2a 2N6678
    Text: 2N6678 MECHANICAL DATA Dimensions in mm inches HIGH VOLTAGE NPN POWER TRANSISTOR 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )


    Original     		2N6678 350V transistor npn 15a 300V transistor npn 2a 2N6678 PDF

    200V transistor npn 20a

    Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
    Text: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold


    OCR Scan     		99mml 600pF 600pF SDT14305, 2N3846, SDT14414, 200V transistor npn 20a Transistor 200V 20A 2N3846 200V transistor npn 10a PDF

    solitrondevices

    Abstract: Solitron transistor c47
    Text: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		000S037 305mm) solitrondevices Solitron transistor c47 PDF

    Darlington NPN 250W

    Abstract: MJ10021
    Text: MJ10021 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high−voltage, high− speed, power switching in inductive circuits where fall time is critical. This device is particularly


    Original     		MJ10021 MJ10021 Darlington NPN 250W PDF

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package PDF

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352 PDF

    RCA TO-5

    Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT


    OCR Scan     		IT039I O-2201 lc-15 ITO-31 O-2201 90x90 RCA TO-5 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372 PDF

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G PDF

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL CS5170 MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60 PDF

    k244 transistor

    Abstract: AL-P11 k244 PX1-C12S PX1-C18S AL-SP21 PM2S sK413 AL-SK21 AL-SN31
    Text: Limit Switches General information Limit switches, AL and K244 series • Description FUJI AL and K244 series limit switches have wide application in such industrial equipment as machine tools, printing machines, and transfer machines. These switches feature a sturdy aluminum diecast housing that is highly resistant to oil,


    Original     		SI-1020 SF-2025 SK-580 K244-xP-2 K244-gR-2 DEC1905a k244 transistor AL-P11 k244 PX1-C12S PX1-C18S AL-SP21 PM2S sK413 AL-SK21 AL-SN31 PDF