D2Pak Package dimensions
Abstract: MOSFET 355 2X transistor transistor 355 355 data
Text: Super-D 2Pak Package Outline 4.0 [.157] 3.0 [.119] 10.9 [.429] 9.9 [.390] 9.02 [.355] 8.65 [.341] 0.9 [.035] 0.7 [.028] 3 3 15.2 [.598] 14.2 [.560] 13.0 [.511] 12.0 [.473] 1 9.2 [.362] 9.0 [.355] 2 1 2X 2.54 [.100] 1.2 [.047] 0.8 [.032] 0.25 [.010] 2X B A
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5M-1994.
D2Pak Package dimensions
MOSFET 355
2X transistor
transistor 355
355 data
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Untitled
Abstract: No abstract text available
Text: Analog Power AM5400N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V
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AM5400N
DS-AM5400N-2010
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Untitled
Abstract: No abstract text available
Text: Analog Power AM2370N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 Typical Applications:
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AM2370N
AM2370N
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MOSFET
Abstract: 2N6845
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)
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2N6845
IRFF9120
-100V
300ms,
MOSFET
2N6845
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Untitled
Abstract: No abstract text available
Text: Analog Power AM20N10-250D N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 11 10 Typical Applications:
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AM20N10-250D
AM20N10-250D
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CS16
Abstract: ctn 4.7 RM-1 datasheet ITO-220 CD16 CS14 CS28 cx sot-353 DFN33 SOT-26 ci
Text: Packing of IC & MOSFET TUBE PACK Outline Code Outline Packing Code Static electricity bag 靜電袋 Box (PCS) Box # Box Size (mm) CTN # CTN (PCS) CTN Size (mm) G.W. (kgs) N.W. (kgs) CZ TO-220 (50pcs/tube) C0 1,000 2,000 VENDOR 600*166*96 VENDOR 8,000 630*355*233
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O-220
50pcs/tube)
O-220-5L
ITO-220-4L
ITO-220
O-251
75pcs/tube)
CS16
ctn 4.7
RM-1 datasheet
ITO-220
CD16
CS14
CS28
cx sot-353
DFN33
SOT-26 ci
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lucent DC-DC POWER MODULE
Abstract: No abstract text available
Text: ALH25AF48 N Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V&3.3V Dual Output 100W DC-DC Converter (Rev01) TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 -1Publishing Date: 20020624
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ALH25AF48
Rev01)
lucent DC-DC POWER MODULE
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k 3531 transistor
Abstract: No abstract text available
Text: ALH25AF48N Half-brick Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Dual Output 100W DC-DC Converter Rev02 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 Publishing Date: 20040928
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ALH25AF48N
Rev02
02inch
01inch
k 3531 transistor
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k 3531 transistor
Abstract: No abstract text available
Text: ALH25AF48 Half-brick Dual Output Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Output 100 Watt DC-DC Converter TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 www.astec.com
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ALH25AF48
-19www
-20www
k 3531 transistor
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IXFD21N100F-8F
Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005
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IXFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD180N085-9X
IXFD280N085-9Y
IXFD75N10-7X
IXFD80N10Q-8X
IXFD170N10-9X
IXFD230N10-9Y
IXFD70N15-7X
IXFD21N100F-8F
IXFD38N100Q2-95
DIODE 1581
IXYS IXFK21N100Q
IXFH40N30
IXFH40N50Q
IXFK38N80Q2
7Y 6
IXFB50N80Q2
IXFN80N50
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IXFH32N50Q equivalent
Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω
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IXFD50N20-7X
IXFD50N20Q-7X
IXFD80N20Q-8X
IXFD90N20Q-8Y
IXFD120N20-9X
IXFD180N20-9Y
IXFD60N25Q-8X
IXFD100N25-9X
IXFD40N30-7X
IXFD40N30Q-7X
IXFH32N50Q equivalent
ixfk24n100
IXFN80N50
1672 mos-fet
IXFH40N30
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SSD20N10-250D
Abstract: MosFET ssd20n10 250d
Text: SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS ON 280mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench
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SSD20N10-250D
O-252
11-Aug-2010
SSD20N10-250D
MosFET
ssd20n10
250d
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Untitled
Abstract: No abstract text available
Text: AM20N10-250DE Analog Power N-Channel 100-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and
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AM20N10-250DE
DS-AM20N10-250DE
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4425 8-pin
Abstract: 4425 mosfet mosfet 4423 NCP4425DWR2 NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P
Text: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,
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NCP4423,
NCP4424,
NCP4425
NCP4423/4424/4425
NCP4423/4424/4425.
r14525
NCP4423/D
4425 8-pin
4425 mosfet
mosfet 4423
NCP4425DWR2
NCP4423
NCP4423DWR2
NCP4423P
NCP4424
NCP4424DWR2
NCP4424P
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Untitled
Abstract: No abstract text available
Text: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,
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NCP4423,
NCP4424,
NCP4425
NCP4423/4424/4425
NCP4423/4424/4425.
r14525
NCP4423/D
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mosfet 4423
Abstract: 4425 8 P-N mosfet NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P NCP4425 NCP4425DWR2
Text: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,
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NCP4423,
NCP4424,
NCP4425
NCP4423/4424/4425
NCP4423/4424/4425.
r14525
NPC4423/D
mosfet 4423
4425 8 P-N mosfet
NCP4423
NCP4423DWR2
NCP4423P
NCP4424
NCP4424DWR2
NCP4424P
NCP4425
NCP4425DWR2
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4425 mosfet
Abstract: mosfet 4423 TC4423 TC4424 mosfet 4425 DRIVERS high-speed power MOSFET TC4425 TC4423COE TC4423CPA MOSFET 355
Text: TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428
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TC4423
TC4424
TC4425
TC4423/4424/4425
TC4426/4427/4428
TC426/427/428
TC4423/
4425 mosfet
mosfet 4423
TC4423
TC4424
mosfet 4425
DRIVERS high-speed power MOSFET
TC4425
TC4423COE
TC4423CPA
MOSFET 355
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4425 8 P-N mosfet
Abstract: 4425 mosfet DRIVERS high-speed power MOSFET Matching MOSFET Drivers to MOSFETs mosfet 4423 TC4424 transistor mosfet 4425 4425 8-pin TC4425 TC4423
Text: 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in
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TC4423
TC4424
TC4425
TC4423/4424/4425
TC4426/4427/4428
TC426/427/428
TC4423/
4425 8 P-N mosfet
4425 mosfet
DRIVERS high-speed power MOSFET
Matching MOSFET Drivers to MOSFETs
mosfet 4423
TC4424
transistor mosfet 4425
4425 8-pin
TC4425
TC4423
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TC4425
Abstract: TC4423 TC4423COE TC4424 4425 8-pin mosfet 4423 4425 mosfet mm73a
Text: 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in
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TC4423
TC4424
TC4425
TC4423/4424/4425
TC4426/4427/4428
TC426/427/428
TC4423/
TC4425
TC4423
TC4423COE
TC4424
4425 8-pin
mosfet 4423
4425 mosfet
mm73a
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ultrarf
Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
Text: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in
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UPF18045-159
ultrarf
UPF18045-159
2200PF
470PF
47UF
MBD701
MMBTA64
1UF 50V SMT CASE C
diode gp 805
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AON6240
Abstract: 40ida
Text: AON6240 40V N-Channel MOSFET General Description Product Summary VDS The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of
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AON6240
AON6240
40ida
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CFL inverter circuit schematic diagram
Abstract: uv Photocell LF156 HE LF155 LF157 LF257 LF355 LF357 rs 355 integrated circuits LF157A
Text: r z 7 S G S -T H O M S O N Ê l f i 55/255/355 SERIES J-FET INPUT SINGLE OPERATIONAL AMPLIFIERS • REPLACE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT FREE HANDLING COMPARED WITH MOSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE APPLICATIONS
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OCR Scan
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LF155/255/355
CFL inverter circuit schematic diagram
uv Photocell
LF156 HE
LF155
LF157
LF257
LF355
LF357
rs 355 integrated circuits
LF157A
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NEM0899F01-30
Abstract: BL 130 301
Text: VHF Silicon MOSFET for Broadcast/Base Station T Y H Ç tt. ¡m t :fittaafar • iw u y i I V»* : ■m' w h iá * NEM0899F01-301 NEM0995F01-301 new> F011 F011 460 to 860 820 to 960 Poirr P out dBm (W) Gain Efficienc (dBm) (%) 30 AB 50 100 12 30 AB 49.8 95
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OCR Scan
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NEM0899F01-301
NEM0995F01-301
NEL200101-24
MC-7852
MC-7856
50-860M
MC-7862
MC-7866
NEM0899F01-30
BL 130 301
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POWER MOSFET 4600
Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X
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OCR Scan
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1XFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD67N10-7X
XFD75N10-7X
IXFD75N10Q-7X
XFD80N100-8X
XFD170N10-9X
XFD230N10-9Y
IXFD70N15-7X
POWER MOSFET 4600
MOSFET 4600
4600 mosfet
IXFD80N20Q-8X
IXFD40N30-7X
IXFX90N20Q
1219X
IXFN80N50
IXFn44N80
IXFN39N90
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