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    359 SOT23 Search Results

    359 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    359 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF862

    Abstract: BP317 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in


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    PDF M3D088 BF862 MSB003 125004/00/01/pp7 BF862 BP317 MSB003

    MARKING SMD PNP TRANSISTOR R 172

    Abstract: SMD TRANSISTOR MARKING km SMD TRANSISTOR MARKING CODE YR TRANSISTOR SMD MARKING CODE SP transistor smd YR marking code YS SMD 2PA1774JQ YQ TRANSISTOR SMD MARKING CODE al 2PA1774JS SMD transistor MARKING CODE 43
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 1999 May 04 2000 Dec 12 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES • Power dissipation comparable to SOT23


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    PDF M3D425 2PA1774J 613514/03/pp8 MARKING SMD PNP TRANSISTOR R 172 SMD TRANSISTOR MARKING km SMD TRANSISTOR MARKING CODE YR TRANSISTOR SMD MARKING CODE SP transistor smd YR marking code YS SMD 2PA1774JQ YQ TRANSISTOR SMD MARKING CODE al 2PA1774JS SMD transistor MARKING CODE 43

    Philips MARKING CODE

    Abstract: Philips Logic Marking Code marking code 10 sot23 BP317 PSSI3120CA
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23


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    PDF M3D088 PSSI3120CA MGC421 613514/01/pp8 Philips MARKING CODE Philips Logic Marking Code marking code 10 sot23 BP317 PSSI3120CA

    BF862

    Abstract: marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in


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    PDF M3D088 BF862 MAM036 125004/03/pp12 BF862 marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap

    c65 diode

    Abstract: DIODE C65 TO-247
    Text: POWER&RF 6.5Vseries variable capacitance diode for AM tuning 6.5V系AMチューナ用電圧可変容量ダイオード KV1520 KV1520NT SOT23L-3 (TO92-3) FEATURES „ Included twin element „ Very low operating voltage: VOP=1.0 to 6.5V „ Excellent matching between elements


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    PDF KV1520 OT23L-3) KV1520NT O92-3) c65 diode DIODE C65 TO-247

    ST 9340

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23


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    PDF M3D088 PSSI3120CA PSSI3120CA MGC421 di20CA 13-Feb-03) ST 9340

    2N7002 Philips

    Abstract: 03aa03 philips 2n7002
    Text: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.


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    PDF 2N7002 2N7002 03ab44 2N7002 Philips 03aa03 philips 2n7002

    BSH112

    Abstract: No abstract text available
    Text: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.


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    PDF BSH112 M3D088 BSH112

    Untitled

    Abstract: No abstract text available
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


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    PDF BST82 BST82 03ab44

    BST82

    Abstract: HZG303
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


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    PDF BST82 BST82 03ab44 HZG303

    BSN20

    Abstract: No abstract text available
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


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    PDF BSN20 BSN20 03ab44

    BSN20

    Abstract: HZG303
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


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    PDF BSN20 BSN20 03ab44 HZG303

    03aa03

    Abstract: No abstract text available
    Text: PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 — 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PMBF170 in SOT23.


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    PDF PMBF170 PMBF170 03ab44 03aa03

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN DESCRIPTION • Low noise


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    PDF M3D088 PBR941B 603508/03/pp13

    MSB003

    Abstract: PBR941B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN • Low noise


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    PDF M3D088 PBR941B 603508/03/pp13 MSB003 PBR941B

    smd transistor 203

    Abstract: MSD230 SC-75 SC-89 smd transistor 493
    Text: Philips Semiconductors’ family of resistor-equipped transistors offers a cost-effective solution for next-generation consumer products. These small-signal devices integrate up to two bias resistors Resistor-equipped transistors – diffused with the transistor in a single die – to save board space


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    PDF

    Thermistor, nTC kty

    Abstract: KTY81 ptc kty 811 SOD70 philips ptc thermistors smd KTY 81 6 PTC/KTY84 kty81 application note philips 23 PTC thermistor datasheet PHILIPS
    Text: Philips Semiconductors – a worldwide company Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,


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    PDF KTY81 KTY82 KTY83 KTY84 Thermistor, nTC kty KTY81 ptc kty 811 SOD70 philips ptc thermistors smd KTY 81 6 PTC/KTY84 kty81 application note philips 23 PTC thermistor datasheet PHILIPS

    SMD TRANSISTOR MARKING CODE YR

    Abstract: MARKING SMD PNP TRANSISTOR R 172 TRANSISTOR SMD MARKING CODE rd 2PA1774J 2PA1774JQ 2PA1774JR 2PA1774JS 2PC4617J BP317 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J FEATURES PINNING


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    PDF M3D425 2PA1774J SCA63 115002/00/02/pp8 SMD TRANSISTOR MARKING CODE YR MARKING SMD PNP TRANSISTOR R 172 TRANSISTOR SMD MARKING CODE rd 2PA1774J 2PA1774JQ 2PA1774JR 2PA1774JS 2PC4617J BP317 SC-89

    VARISTOR 593

    Abstract: 223 Varistor RY 228 Varistor 271 592 varistor BLF 377 RY 227 VARISTOR 593 275 VARISTOR 338 VARISTOR PTC
    Text: [• - - r Numerical Index NUMERICAL INDEX OF CATALOG NUMBERS CATALOG NUMBER PAGE NUMBER 100 000 S e r ie s .353-354 101 000 Series . 352


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    PDF SP721 SP723 SP724 VARISTOR 593 223 Varistor RY 228 Varistor 271 592 varistor BLF 377 RY 227 VARISTOR 593 275 VARISTOR 338 VARISTOR PTC

    transistor AY PNP smd

    Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 11 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23


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    PDF PDTA114EEF MAM413 115002/00/02/pp8 transistor AY PNP smd marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG

    pm2222a

    Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
    Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT


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    PDF BA582 OD123 BA482 BA682 BA683 BA483 BAL74 BAW62, 1N4148 pm2222a SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS

    bf862

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in


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    PDF BF862 MSB003 bf862

    st smd diode marking code VU

    Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage


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    PDF BAS40, BAS40-04, BAS40-05 BAS40-06 BAS40-07 OT143B 115002/00/04/pp8 st smd diode marking code VU SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23

    ic 311 comparator

    Abstract: 359 SOT23 OP AMP WITH 5 AMP OUTPUT micropower OP AMP MAX4242
    Text: _ Op Am ps/Com parators Op Amps/Comparators, Product Tables and T re e s . 3-3 MAX961 MAX962 MAX963 MAX964 MAX965 MAX966


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    PDF MAX961 MAX962 MAX963 MAX964 MAX965 MAX966 MAX967 MAX968 MAX969 MAX976 ic 311 comparator 359 SOT23 OP AMP WITH 5 AMP OUTPUT micropower OP AMP MAX4242