35N120
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20
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247TM
35N120BD1
728B1
35N120
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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Original
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35N120B
O-268
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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Original
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247TM
35N120BD1
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PDF
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Untitled
Abstract: No abstract text available
Text: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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Original
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35N120B
35N120B
O-247
O-268
O-247)
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PDF
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ixgh35n120b
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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Original
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35N120B
35N120B
O-268
O-247
ixgh35n120b
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20
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Original
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247TM
35N120BD1
728B1
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PDF
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IXGX
Abstract: No abstract text available
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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35N120B
35N120BD1
O-264
247TM
728B1
IXGX
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT IXGH 35N120B VCES = 1200 V = 70 A IXGT 35N120B IC25 VCE sat = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20
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Original
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35N120B
O-268
O-247
O-268)
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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Original
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35N120B
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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Original
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247TM
35N120BD1
728B1
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PDF
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IXGR35N120BD1
Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300
Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200
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35N120BD1
IC110
IF110
405B2
IXGR35N120BD1
igbt induction cooker
induction cooker
IF110
ISOPLUS247
35n120
S2300
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200
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Original
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35N120BD1
IC110
IF110
405B2
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PDF
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35n120
Abstract: 35N120B 35N120C IXGR35N120B
Text: VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE sat IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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ISOPLUS247TM
35N120B
35N120C
35N120C
35n120
IXGR35N120B
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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35N120B
35N120BD1
35N120BD1
O-264
247TM
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C
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Original
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35N120B
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: VCES HiPerFASTTM IGBT ISOPLUS247TM IC25 VCE sat IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V tfi(typ) 160 ns 115 ns (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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ISOPLUS247TM
35N120B
35N120C
35N120C
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient
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Original
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35N120BD1
IC110
IF110
405B2
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PDF
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98669B
Abstract: No abstract text available
Text: IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V
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Original
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35N120B
O-247
728B1
98669B
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V = 70 A IC25 VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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35N120B
35N120BD1
35N120BD1
O-264
247TM
728B1
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PDF
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35N120
Abstract: No abstract text available
Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient
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Original
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35N120BD1
IC110
IF110
35N120
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PDF
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Untitled
Abstract: No abstract text available
Text: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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Original
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35N120B
35N120B
O-247
O-268
O-247)
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol TO-264 AA IXSK Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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Original
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35N120BD1
O-264
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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Original
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35N120B
35N120BD1
O-264
247TM
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V
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Original
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35N120B
O-247
728B1
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PDF
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