220V Driver
Abstract: piezoelectric transducer Piezoelectric ultrasound Transducer HV238 HV238FG high current piezoelectric transducer
Text: Product Summary Sheet HV238 220V Low Charge Injection 16-Channel Analog Switch with Bleed Resistors VDD Applications DIN 1 Medical Ultrasound Imaging Non-Destructive Evaluation SW0 Latch 1 Level Translator 1 SW0 SW7 SW7 VDD SW8 DIN 2 LE Package Option: Latch
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HV238
16-Channel
48-lead
HV238
16-channel,
HV238FG
220V Driver
piezoelectric transducer
Piezoelectric ultrasound Transducer
HV238FG
high current piezoelectric transducer
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Untitled
Abstract: No abstract text available
Text: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Resistors > Product Feature Selector > Product Details H835KBCBER Product Details
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H835KBCBER
H835KBCBER
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acs 08 5s
Abstract: ACS10s MIL-R-39007 R005 ACS 600
Text: D ATA S H E E T 630/2 ACS S E R I E S AXIAL COATED SILICON RESISTORS FEATURES RESISTANCE TOLERANCES OFFERED FROM 0.05% TO 10% BOTH INDUCTIVE W AND NON-INDUCTIVE (N) RESISTORS ARE AVAILABLE RESISTANCE RANGE FROM R005 TO 100K TEMPERATURE RANGE - 55°C TO + 350°C
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acs 08 5s
Abstract: No abstract text available
Text: ACS Silicon Coated Axial Resistors The design of the ACS resistor provides a good balance of power density, stability and resistance to environment for a broad range of industrial power applications, such as drives and controls. • Good ratio between power capability and physical size
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90ppm/
1R-10R
50ppm/
20ppm/
acs 08 5s
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r25b
Abstract: No abstract text available
Text: www.htr-india.com WIRE WOUND RESISTORS SILICONE COATED TYPE Stainless steel / Nickel - plated Terminations HIR SERIES Flame Retardant Silicone Coating HI POWER Silicone Coated Wire Wound Resistors Industrial / Professional Applications Alloy Resistance Wire Wound
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R20A/R20A*
r25b
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CP0015
Abstract: RS-344
Text: CP Vishay Dale Wirewound/Metal Oxide Resistors, Commercial Power, Axial Lead FEATURES • • • • High performance for low cost Meets or exceeds requirements of EIA Standard RS-344 High power to size ratio Ceramic cases are available with circuit board stand-offs
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RS-344
CP0002
CP0002.
CP0003
1000Vrms
11-Sep-04
EIA-344)
CP0015
RS-344
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Untitled
Abstract: No abstract text available
Text: RJU www.vishay.com Vishay Dale Metal Oxide Resistors, Special Purpose, High Power, Ultra High Value FEATURES • • • • • Wattages to 400 W at + 25 °C Derated to 0 at + 230 °C Voltage testing to 100 kV Tolerance: ± 1 %; ± 2 %; ± 5 %; ± 10 % Two terminal styles, style 3 - tab terminal and
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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R 156 35K 113
Abstract: No abstract text available
Text: D, G Vishay Dale Carbon Film Resistors, Special Purpose, High Voltage FEATURES • Ratings to 100 W, 125 kV • Available with either radial bands or ferrule terminals • Standard models epoxy/enamel coated, additional vinyl heat shrink sleeve available for added protection
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11-Mar-11
R 156 35K 113
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CP0022
Abstract: CP0015 CP0025 RS-344 EIA-344 CP0003 B14 MARKING
Text: CP Vishay Dale Wirewound/Metal Oxide Resistors, Commercial Power, Axial Lead FEATURES • High performance for low cost • Meets or exceeds requirements of EIA Standard RS-344 • High power to size ratio • Ceramic cases are available with circuit board
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RS-344
CP0002
CP0002.
CP0003
CP0003.
CP0005
CP0005.
CP0007
CP0007.
CP0010
CP0022
CP0015
CP0025
RS-344
EIA-344
CP0003
B14 MARKING
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CP0003
Abstract: CP000 CP0002
Text: CP Vishay Dale Wirewound/Metal Oxide Resistors, Commercial Power, Axial Lead FEATURES • High performance for low cost • Meets or exceeds requirements of EIA Standard RS-344 • High power to size ratio • Ceramic cases are available with circuit board
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RS-344
CP0002
CP0002.
CP0003
CP0003.
CP0005
CP0005.
CP0007
CP0007.
CP0010
CP000
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Untitled
Abstract: No abstract text available
Text: Class A Compression Amplifier LD511 DATA SHEET FEATURES DESCRIPTION • 64 dB typical electrical gain The LD511 is a Class A compression amplifier which can operate over a range of DC battery voltages from 1.1 V to 2.4 V. A voltage regulator, which is independent of supply
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LD511
LD511,
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ED1913
Abstract: LD511
Text: Class A Compression Amplifier LD511 DATA SHEET FEATURES DESCRIPTION • 64 dB typical electrical gain The LD511 is a Class A compression amplifier which can operate over a range of DC battery voltages from 1.1 V to 2.4 V. A voltage regulator, which is independent of supply
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LD511
LD511,
C-101,
ED1913
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capacitor 226 35K
Abstract: R 226 35k 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120/D
capacitor 226 35K
R 226 35k
226 35K capacitor
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capacitor 226 35K
Abstract: 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
capacitor 226 35K
226 35K capacitor
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226 35K capacitor
Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
226 35K capacitor
MRF21120
z40 mosfet
226 35K
capacitor 226 35K
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226 35k 051
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120/D
226 35k 051
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1650 p2
Abstract: 800W
Text: P1. P2. ASH TYPE High voltage, aluminum encased resistor. POWER RATING 200W 300W 400W 500W 600W RESISTANCE RANGE DIMENSIONS (m/m) A B C D E F G H I Weight 200 280 360 440 520 65 65 65 65 65 45 45 45 45 45 185 265 345 425 505 6 6 6 6 6 M5x8mm M5×8mm M5×8mm
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725/g
1050/g
1650/g
1935/g
1-10K
165/g
1650 p2
800W
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capacitor 106 35K
Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF21120/D
MRF21120R6
capacitor 106 35K
226 35K
106 35K
capacitor 106 35K tantalum
capacitor 106 35K electrolytic
105 35K capacitor
MRF21120R6
capacitor 226 35K
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c38 transistor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
c38 transistor
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A4514
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
A4514
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226 35K capacitor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K capacitor
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RW31
Abstract: 0.47 Ohms Resistors 2 watts irc lf
Text: FIXED, ADJUSTABLE AND TAPPED HIGH POWER WIREWOUND RESISTOR PWW • • • • • Inorganic - SERIES* 5 watts to 225 watts ±10% and ±5% tolerance 0.1 ohms to 1.5 meg TC's from ±50 ppm/°C to ±400 ppm/°C TCR special available to ±5500 ppm/°C ’ Manufactured in Barbados
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ILR 1-11-3
Abstract: VPR-20H
Text: Series V P R Series V P R Material Specifications 5 - 8 , 1 0 - 1 2 , 2 0 Wa t t Lug and Le ad . W irew o un d Resistors e "" «a Coating Conformai vitreous enamel Core Ceramic Terminals Tinned terminals, solderable to MIL-R-26 standards Weight VPR5F V PR 1OF
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MIL-R-26
VPR20H
VPR10F-150
ILR 1-11-3
VPR-20H
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oz89
Abstract: 225k 35k
Text: Series VP & VK Material Specifications Series VP & VK 25, 5 0 ,1 0 0 ,1 6 0 - 1 7 5 , 200-225 Watt Fixed Power, Wirewound Resistors Coating V itreous enam el Core Tubular ceram ic Term inals Tinned, lug term inals, solderable to M IL -R -26 standards W eight
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VP25K
VP50K
VKI60W
VK200W
VK100N
VK160W
oz89
225k 35k
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