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Torex Semiconductor LTD XC6135N30C9R-G IC SUPERVISOR 1 CHAN USPQ-4B05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XC6135N30C9R-G	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.20352	Buy Now
	XC6135N30C9R-G	Cut Tape	5,000		1	1 $0.59 10 $0.517 100 $0.3961 1000 $0.25048 10000 $0.227	Buy Now
	XC6135N30C9R-G	Digi-Reel	5,000		1	1 $0.59 10 $0.517 100 $0.3961 1000 $0.25048 10000 $0.227	Buy Now
Avnet Americas	XC6135N30C9R-G	Reel		12 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.27954	Buy Now
Mouser Electronics	XC6135N30C9R-G		100			1 $0.6 10 $0.517 100 $0.397 1000 $0.271 10000 $0.204	Buy Now
Newark	XC6135N30C9R-G	Cut Tape	4,222		1	1 $0.614 10 $0.538 100 $0.412 1000 $0.26 10000 $0.26	Buy Now
Vishay Siliconix SQM35N30-97_GE3 MOSFET N-CH 300V 35A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQM35N30-97_GE3	Cut Tape	1,472		1	1 $4.78 10 $3.168 100 $4.78 1000 $4.78 10000 $4.78	Buy Now
	SQM35N30-97_GE3	Digi-Reel	1,472		1	1 $4.78 10 $3.168 100 $4.78 1000 $4.78 10000 $4.78	Buy Now
	SQM35N30-97_GE3	Reel	800		800	1 - 10 - 100 - 1000 $1.77228 10000 $1.72425	Buy Now
Torex Semiconductor LTD XC6135N30B9R-G IC SUPERVISOR 1 CHAN USPQ-4B05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XC6135N30B9R-G	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.20352	Buy Now
Avnet Americas	XC6135N30B9R-G	Reel		12 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Torex Semiconductor LTD XC6135N30CMR-G IC SUPERVISOR 1 CHANNEL SOT25
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DigiKey	XC6135N30CMR-G	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.19771	Buy Now
Avnet Americas	XC6135N30CMR-G	Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.243	Buy Now
Mouser Electronics	XC6135N30CMR-G					1 $0.6 10 $0.511 100 $0.382 1000 $0.232 10000 $0.185	Get Quote
Torex Semiconductor LTD XC6135N30BNR-G IC SUPERVISOR 1 CHANNEL SSOT24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XC6135N30BNR-G	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.21134	Buy Now
Avnet Americas	XC6135N30BNR-G	Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.27954	Buy Now
Mouser Electronics	XC6135N30BNR-G					1 $0.6 10 $0.517 100 $0.397 1000 $0.251 10000 $0.204	Get Quote

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35N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
40N30L Abstract: ixfm40n30 Text: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A	Original	PDF	35N30 40N30 40N30 O-204 40N30L ixfm40n30
IXTH35N30 Abstract: IXTH40N30 IXTM40N30 Text: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	35N30 40N30 O-247 O-204 IXTH35N30 IXTH40N30 IXTM40N30
40N30 Abstract: 35n30 FM40N30 IXFH40N30 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous	Original	PDF	35N30 40N30 40N30 35n30 FM40N30 IXFH40N30
40N30 Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA Text: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C	Original	PDF	35N30 40N30 O-204 O-247 O-204 40N30 IXTH40N30 IXTM35N30 IXTM40N30 40AA
IXTH40N30 Abstract: 40N30 D-68623 IXTM40N30 35N30 IXTM35N30 Text: VDSS IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V V GS Continuous ±20 V VGSM Transient	Original	PDF	35N30 40N30 O-204 O-247 IXTH40N30 40N30 D-68623 IXTM40N30 35N30 IXTM35N30
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous	Original	PDF	35N30 40N30
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
FH40N30 Abstract: IXFH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXFM40N30 IXYS Corporation FM40N30 IXFH40N30S Text: 35N30 35N30 VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/35N30 300 V IXFH40N30 300 V IXFM40N30 300 V IXFH40N30 IXFM40N30 ID25 RDS on trr 35 A 40 A 40 A 100mΩ 85mΩ 88mΩ 200 ns 200 ns 200 ns	Original	PDF	IXFH35N30 IXFM35N30 IXFH/IXFM35N30 IXFH40N30 IXFM40N30 IXFH40N30 IXFM40N30 O-247 35N30 40N30 FH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXYS Corporation FM40N30 IXFH40N30S
IXTH35N30 Abstract: No abstract text available Text: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2	OCR Scan	PDF	35N30 40N30 to150 O-247 T0-204 IXTH35N30
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	PDF	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B
1Bt smd Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623 Text: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family	OCR Scan	PDF	35N30 40N30 40N30 1Bt smd smd 1bt A1t smd smd diode A1T smd 1bt diode IXFH40N30 diode D83 004 D-68623
IXFH40N30 Abstract: international rectifier igbt to-247 package Text: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 IXFH40N30 IXFM40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40	OCR Scan	PDF	ixfh35N30 ixfm35N30 IXFH40N30 IXFM40N30 35N30 40N30 international rectifier igbt to-247 package

mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	PDF	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
35N25 Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25 Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b \| DIXYS MegaMOS'“ FETs 35N30, 25 35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous	OCR Scan	PDF	IXTH35N25 IXTH35N30 IXTM35N25 IXTM35N30 35N25 35N30 800v mosfet megamos 46 08 09 6
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
35N30 Abstract: rm 1117 ixtm35n30 Text: p VDSS MegaMOS FET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions v MS Tj = 25°G to 150“ C 300 V V«, Tj = 25°C to 150°C; RGS = 1 M£i 300 V V cs Continuous ±20 V VGSM Transient ±30 V ^□25 Tc = 25CC 35	OCR Scan	PDF	35N30 40N30 40N30 O-247 O-204 O-204 O-247 C2-26 rm 1117 ixtm35n30
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	PDF	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
IXTN 36N50 C Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50 Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20	OCR Scan	PDF	O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
IRFP 260 M Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240 Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH	OCR Scan	PDF	67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240
IXfk 75 N 50 Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400	OCR Scan	PDF	76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
ID 48 Megamos Abstract: 35N25 IXTM35N25 ixtm35n30 Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b \| 4t.flt.S5t DIXYS MegaMOS'“ FETs 35N30, 25 35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous	OCR Scan	PDF	IXTH35N25 IXTM35N25 IXTH35N30 IXTM35N30 O-204 O-247 IXTH350 ID 48 Megamos 35N25
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	PDF	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

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35N30 Search Results

35N30 Price and Stock

Torex Semiconductor LTD XC6135N30C9R-G

Vishay Siliconix SQM35N30-97_GE3

Torex Semiconductor LTD XC6135N30B9R-G

Torex Semiconductor LTD XC6135N30CMR-G

Torex Semiconductor LTD XC6135N30BNR-G

35N30 Datasheets Context Search

40N30L

IXTH35N30

40N30

40N30

IXTH40N30

Untitled

C1162

sd 20n60

7n60b

FH40N30

IXTH35N30

75N1

1Bt smd

IXFH40N30

mosfet 4400

35N25

40n80

35N30

ixys ixfn 55n50

IXTN 36N50 C

IRFP 260 M

IXfk 75 N 50

ID 48 Megamos

11n80