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    35n60c

    Abstract: ixkp35n60c5m
    Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 35N60C5M O-220 20080310a 35n60c ixkp35n60c5m