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    362 MOSFET Search Results

    362 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    362 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: OVEN INDUSTRIES, INC. OPERATING MANUAL Model 5C7-362 THERMOELECTRIC MODULE TEMPERATURE CONTROLLER TABLE OF CONTENTS Features . 1 Description .


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    5C7-362 RS232 5C7-362 C74-118A PDF

    G3VM-21GR1

    Abstract: G3VM-41GR4 41GR4
    Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 362 MOSFET Relays – G3VM-41GR3 Text J Text MOSFET Relays – G3VM-41GR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a group on


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    G3VM-41GR3 G3VM-41GR4 G3VM-21GR1 J957-E2-01 G3VM-21GR1 G3VM-41GR4 41GR4 PDF

    D2Pak Package dimensions

    Abstract: MOSFET 355 2X transistor transistor 355 355 data
    Text: Super-D 2Pak Package Outline 4.0 [.157] 3.0 [.119] 10.9 [.429] 9.9 [.390] 9.02 [.355] 8.65 [.341] 0.9 [.035] 0.7 [.028] 3 3 15.2 [.598] 14.2 [.560] 13.0 [.511] 12.0 [.473] 1 9.2 [.362] 9.0 [.355] 2 1 2X 2.54 [.100] 1.2 [.047] 0.8 [.032] 0.25 [.010] 2X B A


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    5M-1994. D2Pak Package dimensions MOSFET 355 2X transistor transistor 355 355 data PDF

    TDA7850A

    Abstract: Flexiwatt27 TDA785 TDA7850AH
    Text: TDA7850A 4 x 50 W MOSFET quad bridge power amplifier Datasheet − production data Features • High output power capability: – 4 x 50 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4 V, 1 kHz, 10 % ■


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    TDA7850A TDA7850A Flexiwatt27 TDA785 TDA7850AH PDF

    G3VM-41GR3

    Abstract: G3VM41GR3
    Text: Omron 08 Cat 303-464 5/10/07 15:48 Page 360 MOSFET Relay – G3VM-21GR1 Text Text MOSFET Relays – G3VM-41GR3 New MOS FET Relays with Low Output Capacitance and ON Resistance CxR = 15pF•Ω in a 40-V Load Voltage Model. • Output capacitance of 0.6 pF (typical) allows


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    G3VM-21GR1 G3VM-41GR3 G3VM-41GR4 J956-E2-01 G3VM-41GR3 G3VM41GR3 PDF

    IT234

    Abstract: SCHEMATIC IGNITION WITH IGBTS SCHEMATIC IGNITION iGBT schematic ignition SCHEMATIC IGNITION coils WITH IGBTS IT 243 IT 249 IT 255 pulse IGNITION LSTR
    Text: 147 147 EMC Components Pulse transformers IT series with single secondary winding 150 IT series with double secondary winding 153 148 EMC Components Pulse transformers. They provide a proper galvanic separation between gate drive circuitry and high voltage path in IGBT, thyristor, triac, power MOSFET and DC/DC converter circuits.


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    winding150 winding153 IT234 SCHEMATIC IGNITION WITH IGBTS SCHEMATIC IGNITION iGBT schematic ignition SCHEMATIC IGNITION coils WITH IGBTS IT 243 IT 249 IT 255 pulse IGNITION LSTR PDF

    Untitled

    Abstract: No abstract text available
    Text: TDA7850A 4 x 50 W MOSFET quad bridge power amplifier Datasheet  production data Features • High output power capability: – 4 x 50 W/4  max. – 4 x 30 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 80 W/2  max. – 4 x 55 W/2  @ 14.4 V, 1 kHz, 10 %


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    TDA7850A PDF

    TDA7851F

    Abstract: No abstract text available
    Text: TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  max. ■ MOSFET output power stage


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    TDA7851F Flexiwatt25 TDA7851F PDF

    TDA7851l equivalent

    Abstract: No abstract text available
    Text: TDA7851L 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  Max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  Max. ■ MOSFET output power stage


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    TDA7851L TDA7851l equivalent PDF

    tda7851

    Abstract: TDA7851L TDA-7851 tda-7851l TDA7851l equivalent
    Text: TDA7851L 4 x 45 W MOSFET quad bridge power amplifier Features • Multipower BCD technology ■ High output power capability: – 4 x 45 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage ■ Excellent 2 Ω driving capability


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    TDA7851L TDA7851L Flexiwatt25 tda7851 TDA-7851 tda-7851l TDA7851l equivalent PDF

    TDA7851A

    Abstract: No abstract text available
    Text: TDA7851A 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  Max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  Max. ■ MOSFET output power stage


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    TDA7851A TDA7851A PDF

    TDA7576B

    Abstract: TDA7576 mosfet power amplifier
    Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %


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    TDA7576B Multiwatt15 TDA7576B TDA7576 mosfet power amplifier PDF

    TDA7576B

    Abstract: TDA7576
    Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %


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    TDA7576B Multiwatt15 TDA7576B TDA7576 PDF

    TDA7576

    Abstract: No abstract text available
    Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet  production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4  @ 24 V, 1 kHz; 10 %


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    TDA7576B Multiwatt15 TDA7576 PDF

    TDA7569B

    Abstract: No abstract text available
    Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet  production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■


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    TDA7569BLV Flexiwatt27 TDA7569B PDF

    TDA7569B

    Abstract: tda7569
    Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − preliminary data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency


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    TDA7569BLV TDA7569B tda7569 PDF

    TDA7569B

    Abstract: tda7569 4.1 Channel True MOSFET Car Power Amplifier
    Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■


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    TDA7569BLV TDA7569B tda7569 4.1 Channel True MOSFET Car Power Amplifier PDF

    tda7569

    Abstract: TDA7569B TDA7569BLV TDA7569BLVPDTR tda756 4.1 Channel True MOSFET Car Power Amplifier
    Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■


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    TDA7569BLV tda7569 TDA7569B TDA7569BLV TDA7569BLVPDTR tda756 4.1 Channel True MOSFET Car Power Amplifier PDF

    tda7569

    Abstract: TDA7569B
    Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■


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    TDA7569BLV tda7569 TDA7569B PDF

    car mosfet audio amplifier diagram

    Abstract: No abstract text available
    Text: STPA001 4 x 50 W MOSFET quad bridge power amplifier Datasheet − production data Features • Multipower BCD technology ■ High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage


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    STPA001 car mosfet audio amplifier diagram PDF

    TDA75610

    Abstract: TDA75610LV TDA75610LVP TDA75610LVPDTR TDA7561 4x25W k734 car woofer amplifier circuit diagram Power-SO36 tda75610lv
    Text: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB


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    TDA75610LV TDA75610 TDA75610LV TDA75610LVP TDA75610LVPDTR TDA7561 4x25W k734 car woofer amplifier circuit diagram Power-SO36 tda75610lv PDF

    Untitled

    Abstract: No abstract text available
    Text: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet  production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB


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    TDA75610LV Flexiwatt27 PDF

    SOT 363 marking code 62 low noise

    Abstract: bf362 bc238c
    Text: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages


    OCR Scan
    Q00S201 569-GS SOT 363 marking code 62 low noise bf362 bc238c PDF

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


    OCR Scan
    SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP6N60 SSP7N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9511 IRF9Z34 ssp5n80 IRF9521 IRF9631 PDF