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    369AA Price and Stock

    Analog Devices Inc DC1369A-A

    BOARD DEMO 125MSPS LTC2261-14
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    DigiKey DC1369A-A Bulk 4 1
    • 1 $231
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    Mouser Electronics DC1369A-A
    • 1 $225.98
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    Analog Devices Inc DC1369A-A 34
    • 1 $225.98
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    Richardson RFPD DC1369A-A 1
    • 1 $225.98
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    KEMET Corporation CBR08C369AAGAC

    CAP CER 3.6PF 250V C0G/NP0 0805
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    DigiKey CBR08C369AAGAC Reel 4,000
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    Mouser Electronics CBR08C369AAGAC
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    Newark CBR08C369AAGAC Reel 4,000
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    KEMET Corporation CBR05C369AAGAC

    3.60PF 250V
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    DigiKey CBR05C369AAGAC Reel 3,000
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    Newark CBR05C369AAGAC Reel 3,000
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    KEMET Corporation CBR06C369AAGAC

    CAP CER 3.6PF 250V C0G/NP0 0603
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    DigiKey CBR06C369AAGAC Reel 4,000
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    Avnet Americas CBR06C369AAGAC Reel 20 Weeks 4,000
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    Mouser Electronics CBR06C369AAGAC
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    Newark CBR06C369AAGAC Reel 4,000
    • 1 $0.432
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    Skyworks Solutions Inc 514BBC001369AAG

    XTAL OSC XO 2.0000MHZ LVDS SMD
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    DigiKey 514BBC001369AAG 200
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    Mouser Electronics 514BBC001369AAG
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    Richardson RFPD 514BBC001369AAG 1
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    Find more 369AA price and stock on Findchips.com

    369AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    369AA-01

    Abstract: 369AA On semiconductor date Code dpak YEAR A d1l4
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GUAGE CASE 369AA−01 ISSUE B 4 1 2 DATE 03 JUN 2010 3 SCALE 1:1 A E b3 c2 B Z D 1 L4 A 4 L3 2 b2 H DETAIL A 3 c b 0.005 (0.13) e M H C L2 GAUGE PLANE C L L1 DETAIL A A1 ROTATED 905 CW STYLE 1: PIN 1. BASE


    Original     		PDF 369AA-01 369AA 369AA-01 369AA On semiconductor date Code dpak YEAR A d1l4

    ndf02n60zg

    Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D ndf02n60zg NDD02N60ZT4G g1Dv ndf02n60 NDF02N60Z 60ZG

    NDF05N50ZG

    Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
    Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


    Original     		PDF NDF05N50Z, NDD05N50Z JESD22-A114) NDF05N50Z/D NDF05N50ZG NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G

    6414a

    Abstract: No abstract text available
    Text: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS on High Current Capability 100% Avalanche Tested AEC Q101 Qualified − NVD6414AN These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		PDF NTD6414AN, NVD6414AN NTD6414AN/D 6414a

    Untitled

    Abstract: No abstract text available
    Text: NDD60N900U1 Product Preview N-Channel Power MOSFET 600 V, 900 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise


    Original     		PDF NDD60N900U1 NDD60N900U1/D

    Untitled

    Abstract: No abstract text available
    Text: NDD60N745U1 Product Preview N-Channel Power MOSFET 600 V, 745 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise


    Original     		PDF NDD60N745U1 NDD60N745U1/D

    16ang

    Abstract: NTD6416AN 369D NTD6416ANT4G
    Text: NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS on High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol


    Original     		PDF NTD6416AN NTD6416AN/D 16ang NTD6416AN 369D NTD6416ANT4G

    58 65NG mosfet

    Abstract: 65NG 369D NTD5865NT4G
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 58 65NG mosfet 65NG 369D NTD5865NT4G

    369D

    Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
    Text: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4857N NTD4857N/D 369D NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC

    mosfet on 09ng

    Abstract: 09NG 369D NTD4909NT4G 369ad 4909ng
    Text: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4909N NTD4909N/D mosfet on 09ng 09NG 369D NTD4909NT4G 369ad 4909ng

    Untitled

    Abstract: No abstract text available
    Text: NTD5414N, NVD5414N Power MOSFET 24 A, 60 V Single N−Channel DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF NTD5414N, NVD5414N NTD5414N/D

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N

    Untitled

    Abstract: No abstract text available
    Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX


    Original     		PDF NTD5865N NTD5865N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features • • • • • Low RDS on High Current Capability 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF NTD6414AN, NVD6414AN NTD6414AN/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features • • • • • Low RDS on High Current Capability 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF NTD6416ANL, NVD6416ANL NTD6416ANL/D

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    369D

    Abstract: NTD4970N NTD4970NT4G 70ng
    Text: NTD4970N Advance Information Power MOSFET 30 V, 36 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4970N NTD4970N/D 369D NTD4970N NTD4970NT4G 70ng

    6415ANL

    Abstract: NTD6415ANL NTD6415ANLT4G 6415ANLG
    Text: NTD6415ANL N- Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level Features •    Low RDS on 100% Avalanche Tested AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX


    Original     		PDF NTD6415ANL AEC-Q101 NTD6415ANL/D 6415ANL NTD6415ANL NTD6415ANLT4G 6415ANLG

    NVD5862

    Abstract: No abstract text available
    Text: NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NVD5862N AEC-Q101 NVD5862N/D NVD5862

    NVD5867

    Abstract: NVD5867NLT4G 67LG 051BSC
    Text: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NVD5867NL AEC-Q101 NVD5867NL/D NVD5867 NVD5867NLT4G 67LG 051BSC

    NVD5865

    Abstract: No abstract text available
    Text: NVD5865NL Power MOSFET 60 V, 38 A, 16 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NVD5865NL AEC-Q101 NVD5865NL/D NVD5865

    N03G

    Abstract: nc555 nc 555 65N03 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G
    Text: NTD65N03R Power MOSFET 25 V, 65 A, Single N−Channel, DPAK Features • • • • Low RDS on Ultra Low Gate Charge Low Reverse Recovery Charge Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP Applications • Desktop CPU Power • DC−DC Converters


    Original     		PDF NTD65N03R NTD65N03R/D N03G nc555 nc 555 65N03 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G