Untitled
Abstract: No abstract text available
Text: 3.25-5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • Built-in EMI input filter meets
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25kRad
37MeV
MIL-STD-461C
conti25-TXX
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Untitled
Abstract: No abstract text available
Text: 7.5-20 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • No external filter caps required
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25kRad
37MeV
MIL-STD-461C
3108-TXX
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Untitled
Abstract: No abstract text available
Text: 3.25-6.5 Watt Hybrid Features SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • No external filter caps required
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25kRad
37MeV
MIL-STD-461C
3070-TXX
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Untitled
Abstract: No abstract text available
Text: 32.5-80 Watt Hybrid SINGLE OUTPUT DEVICES • Rad Hard: TID > 25kRad Si • No SEE: LET > 37MeV*cm2/mg • Specifically designed for redundant or individual space applications • Completely self contained Thick Film Hybrid DC-DC Converter • No external filter caps required
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25kRad
37MeV
MIL-STD-461C
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Untitled
Abstract: No abstract text available
Text: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL130R
FSGL130R
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FSGYE130R4
Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
Text: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE130R
FSGYE130R
FSGYE130R4
Rad Hard in Fairchild for MOSFET
2E12
FSGYE130D1
FSGYE130R3
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2E12
Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSTYC9055D,
FSTYC9055R
2E12
FSTYC9055D
FSTYC9055D1
FSTYC9055D3
FSTYC9055R
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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FSYC160D,
FSYC160R
2E12
FSYC160D
FSYC160D1
FSYC160D3
FSYC160R
FSYC160R1
FSYC160R3
FSYC160R4
Rad Hard in Fairchild for MOSFET
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
Text: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL234R,
FSPL234F
FSPL234F
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSPL234D1
FSPL234R
FSPL234R3
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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1E14
Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
Text: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or
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FSPYC264R,
FSPYC264F
FSPYC264F
1E14
2E12
FSPYC264D1
FSPYC264R
FSPYC264R3
iodine
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSYE913A0R FSYE913A0R1 Rad Hard in Fairchild for MOSFET
Text: FSYE913A0D, FSYE913A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYE913A0D,
FSYE913A0R
2E12
FSYE913A0D
FSYE913A0D1
FSYE913A0D3
FSYE913A0R
FSYE913A0R1
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSPL130D1 FSPL130R3 Rad Hard in Fairchild for MOSFET
Text: FSPL130R, FSPL130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL130R,
FSPL130F
FSPL130F
2E12
FSPL130D1
FSPL130R3
Rad Hard in Fairchild for MOSFET
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2E12
Abstract: FSF150D FSF150D1 FSF150D3 FSF150R FSF150R1 FSF150R3
Text: FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF150D,
FSF150R
2E12
FSF150D
FSF150D1
FSF150D3
FSF150R
FSF150R1
FSF150R3
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FSGYC260R3
Abstract: FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET
Text: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low
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FSGYC260R
FSGYC260R3
FSGYC260R4
1E14
2E12
FSGYC260D1
FSGYC260R
Rad Hard in Fairchild for MOSFET
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1E14
Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET
Text: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSL23A0D,
FSL23A0R
1E14
2E12
FSL23A0D
FSL23A0D1
FSL23A0D3
FSL23A0R
FSL23A0R1
FSL23A0R3
Rad Hard in Fairchild for MOSFET
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LSE B3 transformer
Abstract: smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4
Text: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or
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FSGYC264R
FSGYC264R
LSE B3 transformer
smd diode 44a
LSE B3
LSE B3 transformer datasheet
LSE B4 transformer
1E14
2E12
FSGYC264D1
FSGYC264R3
FSGYC264R4
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FSL110D1
Abstract: 2E12 FSL110D FSL110D3 FSL110R FSL110R1 FSL110R3
Text: FSL110D, FSL110R Data Sheet October 1998 File Number 4224.3 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSL110D,
FSL110R
FSL110D1
2E12
FSL110D
FSL110D3
FSL110R
FSL110R1
FSL110R3
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FSGJ264R3 equivalent
Abstract: 1E14 2E12 FSGJ264D1 FSGJ264R FSGJ264R3 FSGJ264R4
Text: FSGJ264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGJ264R
FSGJ264R
FSGJ264R3 equivalent
1E14
2E12
FSGJ264D1
FSGJ264R3
FSGJ264R4
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mosfet for power electronic
Abstract: 2E12 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 Rad Hard in Fairchild for MOSFET 12v 10A electronic transformer
Text: FSS913A0D, FSS913A0R Data Sheet 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSS913A0D,
FSS913A0R
-100V,
mosfet for power electronic
2E12
FSS913A0D
FSS913A0D1
FSS913A0D3
FSS913A0R
FSS913A0R1
Rad Hard in Fairchild for MOSFET
12v 10A electronic transformer
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSS23A4D,
FSS23A4R
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSS23A4D
FSS23A4D1
FSS23A4D3
FSS23A4R
FSS23A4R1
FSS23A4R3
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1E14
Abstract: 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3 diode vg 902 c2
Text: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPL234R,
FSPL234F
1E14
2E12
FSPL234D1
FSPL234F
FSPL234R
FSPL234R3
diode vg 902 c2
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1E14
Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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FSS23A4D,
FSS23A4R
TA17698.
36MeV/mg/cm2
1E14
2E12
FSS23A4D
FSS23A4D1
FSS23A4D3
FSS23A4R
FSS23A4R1
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1E14
Abstract: 2E12 FSS923A0D FSS923A0D1 FSS923A0D3 FSS923A0R FSS923A0R1
Text: FSS923A0D, FSS923A0R Data Sheet 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSS923A0D,
FSS923A0R
-200V,
1E14
2E12
FSS923A0D
FSS923A0D1
FSS923A0D3
FSS923A0R
FSS923A0R1
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