Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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PDF
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AT49BV802A
Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3405E
AT49BV802A
AT49BV802AT
AT49BV802AT-70CI
at49bv802a-70tu
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PDF
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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PDF
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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PDF
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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PDF
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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PDF
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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PDF
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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amic a290021t-70
Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A290021T-70
A290021TL-70
A29002
A290021
A290021L
IN3064
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PDF
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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PDF
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Untitled
Abstract: No abstract text available
Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W28J320B/T
16/4M
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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MB91F467EA
Abstract: No abstract text available
Text: MB91460E-DS705-00002-1v3-E.fm Page 1 Wednesday, September 29, 2010 9:47 AM FUJITSU SEMICONDUCTOR DATA SHEET DS705-00002-1v3-E 32-bit Microcontroller CMOS FR60 MB91460E Series MB91F467EA • DESCRIPTION MB91460E series is a line of general-purpose 32-bit RISC microcontrollers designed for embedded control
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MB91460E-DS705-00002-1v3-E
DS705-00002-1v3-E
32-bit
MB91460E
MB91F467EA
MB91F467EA
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PDF
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1664t
Abstract: AT52BR1662T AT52BR1664T tba 790
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
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16-megabit
11/01/xM
1664t
AT52BR1662T
AT52BR1664T
tba 790
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PDF
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lv8011
Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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1265E
01/00/xM
lv8011
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
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Untitled
Abstract: No abstract text available
Text: TMS320VC5420 FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SPRS080F − MARCH 1999 − REVISED OCTOBER 2008 D 200-MIPS Dual-Core DSP Consisting of Two D D D D D D D D D D D D D Independent Subsystems Each Core Has an Advanced Multibus Architecture With Three Separate 16-Bit
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TMS320VC5420
SPRS080F
200-MIPS
16-Bit
40-Bit
17-Bit
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tr8c
Abstract: TMS28F200
Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture
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OCR Scan
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TMS28F20
TMS28F200BZB
8-BIT/131072
16-BIT
96K-Byte
128K-Byte
16K-Byte
28F200B2x70
28F200BZX80
28F200BZX90
tr8c
TMS28F200
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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PDF
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ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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29LV641
Abstract: 29LV640D
Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards
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OCR Scan
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
TSR048--
16-038-TS48
TSR048
29LV640D
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PDF
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amd 29F400AB
Abstract: 29F400AT 29F400AB
Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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OCR Scan
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Am29F400AT/Am29F400AB
S-Bit/262
16-Bit)
44-pin
48-pin
Am29F400AT/Am
29F400AB
Am29F400T/Am29F400B
18612B.
amd 29F400AB
29F400AT
29F400AB
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors
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OCR Scan
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S29F4O0T-55TC
S29F4Q
-150T3
S29F400T-
9F400B
-150SI
S29F400T
-150SI
AS29F400B-5
S29F400T-5
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