fda16n50_f109
Abstract: FDA16N50-F109
Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDA16N50
fda16n50_f109
FDA16N50-F109
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Untitled
Abstract: No abstract text available
Text: FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features Description • RDS on = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF16N50
FDPF16N50T
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fdpf16n50t
Abstract: No abstract text available
Text: FDP16N50 / FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features Description • RDS on = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP16N50
FDPF16N50
FDPF16N50T
FDPF16N50T
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Untitled
Abstract: No abstract text available
Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA16N50
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BD376
Abstract: bd379
Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD376/378/380
BD375,
BD377
BD379
BD376
BD378
BD380
O-126
BD376
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BD380
Abstract: BD375 BD376 BD377 BD378 BD379
Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD376/378/380
BD375,
BD377
BD379
O-126
BD376
BD378
BD380
BD380
BD375
BD376
BD378
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BD376
Abstract: TO-126 fairchild BD375 BD37810STU
Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD376/378/380
BD375,
BD377
BD379
BD376
BD378
BD380
O-126
BD376
TO-126 fairchild
BD375
BD37810STU
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60V 60A TO-252 N-CHANNEL
Abstract: 60V 60A TO-252 FDB2552 FDP3652 FDB2532 SAS 251 HUFA75623P3 TO-251 fairchild 30K OHM FDP3632
Text: www.fairchildsemi.com Americas Customer Response Center Fairchild Semiconductor 222 West Las Colinas Boulevard Suite 380 Irving, TX 75039 Tel: 888-522-5372 Fax: 972-910-8036 China Fairchild Semiconductor Hong Kong Ltd. Shenzhen Representative Office Room 3107, Shun Hing Square
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FIN-00930
HUFA75637P3,
HUFA75637S3S
O-220/TO-263
HUFA75631P3,
HUFA75631S3S
O-251/TO-252
FDD3682,
FDP3682,
FDB3682
60V 60A TO-252 N-CHANNEL
60V 60A TO-252
FDB2552
FDP3652
FDB2532
SAS 251
HUFA75623P3
TO-251 fairchild
30K OHM
FDP3632
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Untitled
Abstract: No abstract text available
Text: FQA19N60 N-Channel QFET MOSFET 600 V, 18.5 A, 380 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA19N60
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Untitled
Abstract: No abstract text available
Text: FQA19N60 N-Channel QFET MOSFET 600 V, 18.5 A, 380 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA19N60
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NL-4823
Abstract: semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0
Text: Fairchild Semiconductor World Wide Sales Offices AMERICAS MEXICO Fairchild Semiconductor Av. Vallarta #6503 Flr. 14 Col. Cd Granjas Zapopan Jalisco 45010 Mexico Tel: 52-3-1100017 Fax: 52-3-1101878 TEXAS Customer Response Center Fairchild Semiconductor 222 West Las Colinas Blvd., Ste. 380
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1-04-00A
NL-4823
semelec
CHEROKEE INTERNATIONAL
sunbank corp
pr ste 1205 G
Samsung Praha SRI Rev 1_0
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FQA19N60
Abstract: 62mh
Text: FQA19N60 N-Channel QFET MOSFET 600 V, 18.5 A, 380 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQA19N60
FQA19N60
62mh
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Untitled
Abstract: No abstract text available
Text: FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing
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FCP380N60E
FCPF380N60E
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Untitled
Abstract: No abstract text available
Text: FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ Description Features UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching
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FDB15N50
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Untitled
Abstract: No abstract text available
Text: FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCD380N60E
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MP1580
Abstract: MP1580HS amplifier 5.1 surrounding system circuit diagram ic MP1580 CDH74 CR75 EV0007 MP1580HP
Text: MP1580 2A 380 KHz Step Down Converter Monolithic Power Systems General Description Features The MP1580 is a monolithic step down switch mode converter with a built in internal power MOSFET. It achieves 2A continuous output current over a wide input supply range with
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MP1580
380KHz
MP1580
MP1580HS
amplifier 5.1 surrounding system circuit diagram
ic MP1580
CDH74
CR75
EV0007
MP1580HP
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MP1583
Abstract: pin diagram of ic 7480 amplifier 5.1 surrounding system circuit diagram ic MP1580 MP1580 MP1580HS PanJit Semiconductors CDH74 CDRH104R CDRH5D28
Text: MP1580 2A 380 KHz Step Down Converter Monolithic Power Systems General Description Features The MP1580 is a monolithic step down switch mode converter with a built in internal Power MOSFET. It achieves 2A continuous output current over a wide input supply range with
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MP1580
MP1580
600KHz.
MP1583
pin diagram of ic 7480
amplifier 5.1 surrounding system circuit diagram
ic MP1580
MP1580HS
PanJit Semiconductors
CDH74
CDRH104R
CDRH5D28
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Untitled
Abstract: No abstract text available
Text: FCB11N60 N-Channel SuperFET MOSFET 600 V, 11 A, 380 mΩ Features Description • 650V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCB11N60
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Wide Input 3A Step Down Converter
Abstract: CR75 DMS1073AN DMS1073AS Rectifier diode IN4148
Text: DMS1073 DMS 3A, 23V, 380 – 450 kHz Step-Down Converter DESCRIPTION FEATURES The DMS1073 is a step-down regulator with a built in internal Power MOSFET. It achieves 3A continuous output current over a wide input supply range with excellent load and line regulation.
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DMS1073
DMS1073
IN4148
BAT54.
380-450KHz
Wide Input 3A Step Down Converter
CR75
DMS1073AN
DMS1073AS
Rectifier diode IN4148
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Untitled
Abstract: No abstract text available
Text: FCPF11N60F N-Channel SuperFET FRFET® MOSFET 600 V, 11 A, 380 mΩ Features Description • 600 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCPF11N60F
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Untitled
Abstract: No abstract text available
Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD376 Rating VcB O : BD378 : BD380
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OCR Scan
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BD376/378/380
BD375,
BD377
BD379
BD378
BD380
BD376
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488X380
Abstract: CCD222 Contact image sensor fairchild
Text: LDPAL Fairchild Imaging Sensors CCD 222 488X380-Element Area Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 185,440 sensing elements on a single chip Available horizontal resolution: 380 elements per line Available vertical resolution: 488 lines
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488X380-Element
000135b
488X380
CCD222
Contact image sensor fairchild
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schott optical glass
Abstract: No abstract text available
Text: Sensors Fairchild Imaging Sensors _ _ CCD 222 4 8 8 X 3 8 0 -Element Area Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 185,440 sensing elements on a single chip Available horizontal resolution: 380 elements per line Available vertical resolution: 488 lines
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OCR Scan
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CCD222ADC
schott optical glass
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BD376
Abstract: No abstract text available
Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD375, BD 377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 50 V : BD378 - 75 V : BD380 - 100 V - 45 V : BD378
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OCR Scan
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BD376/378/380
BD375,
BD379
BD378
BD380
BD376
BD376
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