Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900
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39N90
IXFN39N90
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IXFN39N90
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM RDS on t (Electrically Isolated Backside) Single Die MOSFET = 900 V = 34 A Ω = 220 mΩ < ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions
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39N90
ISOPLUS264TM
IXFN39N90
728B1
123B1
728B1
065B1
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IXFN80N50
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFN39N90
Abstract: 39N90
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900
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39N90
IXFN39N90
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39N90
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ISOPLUS-227
Abstract: IXFN39N90
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900
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39N90
IXFN39N90
728B1
ISOPLUS-227
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IXFN39N90
Abstract: No abstract text available
Text: Advanced Technical Information IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V
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39N90
OT-22BLOC,
OT-227
IXFN39N90
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900
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39N90
IXFN80N50
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Untitled
Abstract: No abstract text available
Text: IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = = = 900 V 39 A 0.22 Ω trr ≤ 250 ns G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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39N90
125OC
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IXFN39N90
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die IXFN 39N90 VDSS ID25 RDS on trr £ 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900
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39N90
OT-227
E153432
IXFN39N90
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39N90
Abstract: 125OC
Text: IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = = = 900 V 39 A 0.22 Ω trr ≤ 250 ns G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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39N90
125OC
39N90
125OC
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Untitled
Abstract: No abstract text available
Text: IXFN 39N90 HiPerFETTM Power MOSFETs Single MOSFET Die RDS on S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C 39 A IDM TC= 25°C, pulse width limited by TJM
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39N90
OT-227
E153432
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1146
C1162
C1278
C1106
C1156
ixfh 60N60
C1142
c1238
C1104
ixfn 26n60
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d2539
Abstract: lb 1260 IXFN39N90
Text: □ IX Y S Advanced Technical Information IXFN 39N90 HiPerFET Power MOSFETs Single MOSFET Die VDSS = ^D25 R d ” DS on = 900 V 39 A 0.2 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Symbol TestConditions Maximum Ratings
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IXFN39N90
OT-227
E153432
d2539
lb 1260
IXFN39N90
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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