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    3DD13002B Search Results

    3DD13002B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3DD13002B Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF
    3DD13002B Weitron Switch Mode NPN Transistors Original PDF
    3DD13002B-TO-92 Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF

    3DD13002B Datasheets Context Search

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    3DD13002B

    Abstract: BR 610v
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR( NPN ) TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter


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    PDF 3DD13002B 200mA 200mA, 100mA 3DD13002B BR 610v

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR( NPN ) FEATURE Power dissipation PCM : 3DD13002 : 1.2 W (Tamb=25℃) 3DD13002B: 1 W (Tamb=25℃) Collector current ICM :


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    PDF 3DD13002/3DD13002B 3DD13002 3DD13002Bï 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR(NPN) FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE


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    PDF 3DD13002B

    3DD13002B

    Abstract: 3DD13002
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR( NPN ) TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol


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    PDF 3DD13002B 200mA 200mA, 100mA 3DD13002B 3DD13002

    Untitled

    Abstract: No abstract text available
    Text: 3DD13002B Switch Mode NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO


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    PDF 3DD13002B 270TYP

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO:


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    PDF 3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA

    3DD13002B

    Abstract: No abstract text available
    Text: 3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value 400 600 6.0 1.0


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    PDF 3DD13002B 270TYP 3DD13002B

    npn 600v to92

    Abstract: 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A


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    PDF 3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA npn 600v to92 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR( NPN ) TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter


    Original
    PDF 3DD13002B

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR( NPN ) TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter


    Original
    PDF 3DD13002B 200mA 200mA, 100mA

    Untitled

    Abstract: No abstract text available
    Text: 3DD13002B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF 3DD13002B 25MAX 200mA, 100mA 200mA

    3DD13002

    Abstract: 3DD13002B
    Text: 3DD13002/B 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range


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    PDF 3DD13002/B 3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA 3DD13002 3DD13002B