3CS TRANSISTOR Search Results

3CS TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

3CS TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking 3cs Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50	Original	OT-363 BC857S OT-363 -10mA -100mA -10mA 100MHz 200Hz marking 3cs	PDF
C2373 Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code	Original	Q62702-C2373 OT-363 May-12-1998 C2373 Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor	PDF
5b1 transistor Abstract: transistor 5B1 H12E Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration	Original	OT-363 Q62702-2373 Jan-20-1997 5b1 transistor transistor 5B1 H12E	PDF
BC857S Abstract: VPS05604 Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2	Original	BC857S VPS05604 EHA07175 OT363 Peak30V EHP00381 EHP00380 Nov-29-2001 BC857S VPS05604	PDF
BC857S Abstract: VPS05604 Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2	Original	BC857S VPS05604 EHA07175 OT363 EHP00381 EHP00380 Aug-20-2001 EHP00382 BC857S VPS05604	PDF
VPS05604 Abstract: No abstract text available Text: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604	Original	VPS05604 EHA07175 OT-363 EHP00381 EHP00380 Nov-08-1999 EHP00382 EHP00379 VPS05604	PDF
MARKING 3cs Abstract: No abstract text available Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2	Original	BC857S VPS05604 EHA07175 OT363 MARKING 3cs	PDF
MARKING 3cs Abstract: No abstract text available Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2	Original	BC857S VPS05604 EHA07175 OT363 MARKING 3cs	PDF
sot363 marking DATE code Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363 Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: BC856S/U EHA07175 BC856S OT363 BC856U sot363 marking DATE code marking AF BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363	PDF
transistor marking 6c1 Abstract: No abstract text available Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1	PDF
Untitled Abstract: No abstract text available Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: EHA07175 BC856U	PDF
WD90C11A Abstract: 3C503 schematic diagram cga to vga converter 3cs12 WD90C11 transistor m014 Transistor 2N2222A equivalent integrated circuit 74LS151 Western digital 8514 interfacing of RAM and ROM with 8088 Text: WD90C11IWD90C11A TABLE OF CONTENTS Section Title 1.0 INTRODUCTION 1.1 Document Scope 1.2 Features 1.3 General Description 13-1 13-1 13-1 13-2 2.0 WD90C11 A ARCHITECTURE 2.1 WD90C11 (A) Modules . 13-3 13-3 3.0 WD90C11 (A) INTERFACES 3.1 CPU and BIOS ROM Interface	Original	WD90C11IWD90C11A WD90C11 WD90C11A 3C503 schematic diagram cga to vga converter 3cs12 WD90C11 transistor m014 Transistor 2N2222A equivalent integrated circuit 74LS151 Western digital 8514 interfacing of RAM and ROM with 8088	PDF
Untitled Abstract: No abstract text available Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: BC856S/U EHA07175 BC856S OT363 BC856U	PDF
transistor marking 6c1 Abstract: transistor marking E2 3Ds SOT363 Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1 transistor marking E2 3Ds SOT363	PDF

transistor BC 339 Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564 Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see	Original	BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor BC 339 TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564	PDF
CRTC 6845 Abstract: WD90C33 pin diagram of LED dot matrix display 32x32 PARADISE 80486 interface EQUIVALENCE CMOS 4047 vlsi 386sx PARADISE VGA cga video 6845 Western digital 8514 Text: D A'U 5-11 E ET WD90C33 High Performance VGA Controller ~ WESTERN DIGITAL Copyright 1993 Western Digital Corporation All Rights Reserved Information furnished by Western Digital Corporation is believed to be accurate and reliable. However, no responsibility is assumed by Western Digital Corporation for its use; nor for any infringements of	Original	WD90C33 68x2230) 68x2201) 68x2260) WD9DC33 P0409 CRTC 6845 WD90C33 pin diagram of LED dot matrix display 32x32 PARADISE 80486 interface EQUIVALENCE CMOS 4047 vlsi 386sx PARADISE VGA cga video 6845 Western digital 8514	PDF
transistors BC 543 Abstract: TRANSISTOR BC 748 transistor BC 543 Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration	OCR Scan	Q62702-2373 OT-363 fiS35bD5 235LD5 BC857S 0535bD5 012Dbl3 transistors BC 543 TRANSISTOR BC 748 transistor BC 543	PDF
marking Ht SOT-363 Abstract: 3h250 FT12E 3cs transistor Text: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code	OCR Scan	Q62702-C2373 OT-363 marking Ht SOT-363 3h250 FT12E 3cs transistor	PDF
3cs transistor Abstract: marking 3cs 6c2 transistor PS056 Text: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package	OCR Scan	PS05604 Q62702-C2373 OT-363 Mav-12-1998 3cs transistor marking 3cs 6c2 transistor PS056	PDF
2N956 Abstract: 2N718A N718A Text: 3QE D • 7^5 3 7 aoaioa? 5 ■ T~- 3 5 -ic] SGS-THOMSON 2 N 718A 2 N 956 iO L iO IT G M O O S S G S-THOMSON AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten ded for high-speed switching and amplifier applica	OCR Scan	2N718A 2N956 N718A	PDF
TS280-A89Z Abstract: No abstract text available Text: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a	OCR Scan	TS280-- MB82B71-15/-20 536-WORD MB82B71 300mil 24-LEAD LCC-24P-M02) TS280-A89Z	PDF
Untitled Abstract: No abstract text available Text: TCD5130AC GENERAL TCD5130AC is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera PAL/SECA M TV system . This device has signal pixels of 754 (horizontal) x 583 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.	OCR Scan	TCD5130AC TCD5130AC	PDF
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 \|a,m Process (Leff = 0.65\|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)	OCR Scan	HX6409 HX6218 HX6136 1x106rad 1x101 1x109	PDF
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times	OCR Scan	HX6409 HX6218 HX6136 1x10U 1x109	PDF

Privacy Settings

3CS TRANSISTOR Search Results

3CS TRANSISTOR Result Highlights (5)

3CS TRANSISTOR Datasheets Context Search

marking 3cs

C2373

5b1 transistor

BC857S

BC857S

VPS05604

MARKING 3cs

MARKING 3cs

sot363 marking DATE code

transistor marking 6c1

Untitled

WD90C11A

Untitled

transistor marking 6c1

transistor BC 339

CRTC 6845

transistors BC 543

marking Ht SOT-363

3cs transistor

2N956

TS280-A89Z

Untitled

Untitled

Untitled