csp defects
Abstract: 13B1 IMT-2000 PCB design for very fine pitch csp package mitsubishi gaAs 1998 plasma display address electrode driving
Text: The Dawn of 3D Packaging as System-in-Package SIP Morihiro Kada Abstract The three-dimensional chip-stacked CSP, which started with a flash/SRAM combination memory for cellular phones, was the forerunner from which 3D system packages realize full-scale capability. In the future, 3D package technology will act as a savior in achieving greater shrink of
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lm49720
Abstract: LM4972 stereo 1W "amplifier class ab" 2.1 speaker from headphone jack circuit diagram headphone-amplifier
Text: LM49270 LM49270 Filterless 2.2W Stereo Class D Audio Subsystem with OCL HeadphoneAmplifier, 3D Enhancement, and Headphone Sense Literature Number: SNAS384B LM49270 Filterless 2.2W Stereo Class D Audio Subsystem with OCL Headphone Amplifier, 3D Enhancement, and Headphone
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LM49270
LM49270
SNAS384B
155mW
lm49720
LM4972
stereo 1W "amplifier class ab"
2.1 speaker from headphone jack circuit diagram
headphone-amplifier
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Untitled
Abstract: No abstract text available
Text: 3D Glasses 8-bit Flash Type MCU HT45FH3T Revision: V1.10 Date: ������������ May 17, 2013 HT45FH3T 3D Glasses 8-bit Flash Type MCU Table of Contents Features. 6
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HT45FH3T
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Untitled
Abstract: No abstract text available
Text: User's Guide SBOU046 – April 2007 DEM-OPA-SSOP-3D Demonstration Fixture 1 Description The DEM-OPA-SSOP-3D demonstration fixture is a generic, unpopulated printed circuit board PCB for high-speed triple operational amplifiers in SSOP-16 packages with a flow-through pinout. Figure 1 shows
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SBOU046
SSOP-16
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nvidia chip
Abstract: riva tnt NVIDIA riva tnt 128 nvidia RIVA-128ZX RIVA128ZX nvidia datasheet cmos vga nvidia datasheet CCIR-656 nvidia cmos
Text: NV RIVA 128 PO sanford 5/1/98 11:27 AM Page 1 RIVA 128 Product Ove r view PRODUCT DESCRIPTION The RIVA 128 is the first 128-bit 3D processor to offer unparalleled 2D and 3D performance, meeting all the requirements of the mainstream PC graphics market and Microsoft’s PC’97 specification.The RIVA 128
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128TM
128-bit
100MHz
230MHz
1600x1200
75Hzexturing
128ZX
nvidia chip
riva tnt
NVIDIA riva tnt 128
nvidia
RIVA-128ZX
RIVA128ZX
nvidia datasheet cmos
vga nvidia datasheet
CCIR-656
nvidia cmos
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3D smd marking
Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G
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BC856W
OT-323
BC857AW
BC856AW
BC857BW
BC856BW
BC857CW
BC857W
BC858W
3D smd marking
SMD Transistors 3f
SMD IC ts 4141
BC856BW
SOT SMD IC
BC856W-BC858W
BC856AW
BC856W
BC857AW
BC857BW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR NPN SOT–23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA44
MMBTA94
EL00V,
100mA
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BC856BW
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G
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BC856W
OT-323
BC857AW
BC856AW
BC857BW
BC856BW
BC857CW
BC857W
BC858W
BC856BW
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Untitled
Abstract: No abstract text available
Text: This document was generated on 11/20/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 09-48-3031 Active Description: 2.54mm Pitch Transistor Socket, Staggered Row, 3 Circuits Documents: 3D Model Drawing PDF Product Specification PS-10-07 (PDF)
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PS-10-07
SDA-2512
2512Series
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BC856
Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E
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OT-23
BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858
BC858A
BC858B
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E
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OT-23
BC856
BC857
BC858
BC856
BC856A
BC856B
BC857A
BC857B
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TRANSISTOR SMD MARKING CODE BCH
Abstract: hall digital avr MLX90316 MLX90333 MLX90333BCT TSSOP16 TSSOP-16 903-33B SO8 MARKING CODE E5 90333BCT
Text: MLX90333 Triaxis Position Sensor Features and Benefits Absolute 3D Position Sensor Simple & Robust Magnetic Design Tria⊗is Hall Technology Programmable Linear Transfer Characteristics Alpha, Beta Selectable Analog (Ratiometric), PWM, Serial Protocol
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MLX90333
TSSOP16
ISO14001
TRANSISTOR SMD MARKING CODE BCH
hall digital avr
MLX90316
MLX90333
MLX90333BCT
TSSOP-16
903-33B
SO8 MARKING CODE E5
90333BCT
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Untitled
Abstract: No abstract text available
Text: MLX90333 Triaxis Position Sensor Features and Benefits Absolute 3D Position Sensor Simple & Robust Magnetic Design Tria⊗is® Hall Technology Programmable Linear Transfer Characteristics Alpha, Beta Selectable Analog (Ratiometric), PWM, Serial Protocol
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MLX90333
TSSOP16
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MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
MARKING W3 SOT23 TRANSISTOR
rf transistor mark code H1
transistor marking code ne SOT-23
marking code w2 sot23
pnp rf transistor
sot23 Transistor marking p2
sot-23 Marking 3D
marking 3d sot-23
Marking code mps
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MPSH81
Abstract: MMBTH81 transistor mark 3d
Text: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* Symbol
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MPSH81
MMBTH81
OT-23
MPSH81
MMBTH81
transistor mark 3d
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marvell alaska programmers guide ppc
Abstract: schematic diagram TCON lcd samsung marvell alaska programmers guide vMeta HD Video Decoder SR-1 ARMADA 300 ECC sony lcd tv SCHEMATIC DIAGRAM free free
Text: Cover 88AP510 High-Performance SoC with Integrated CPU, 2D/3D Graphics Processor, and High-Definition Video Decoder Functional Specifications Doc. No. MV-S105142-U0, Rev. D August 3, 2011, Preliminary Marvell. Moving Forward Faster Document Classification: Proprietary Information
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88AP510
MV-S105142-U0,
entry11
entry10
MV-S105142-U0
marvell alaska programmers guide ppc
schematic diagram TCON lcd samsung
marvell alaska programmers guide
vMeta HD Video Decoder
SR-1
ARMADA 300 ECC
sony lcd tv SCHEMATIC DIAGRAM free free
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OMRON H3DE-M1
Abstract: omron H3DE-M2 H3DE-M1 H3DE-S2 omron h3de omron h3de-s2 transformerless power supply 12 volt 1A omron H3DR omron relay G2R H3DE-M2
Text: omRon Solid-state Multi-functional Timer H3DE-M/-S • Eight operating modes H 3D E-M and four operating modes (H 3D E-S) cover a wide range of applications. ■ Programmable contact enables the building of a self-holding relay circuit (-D 2 models). ■ A wide time setting range of 0.10 s to 120 h.
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sot172
Abstract: No abstract text available
Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures
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BLV99/SL
OT172
-SOT172D
MDB012
7Z94685
sot172
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BC856
Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_
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BC856
BC857
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BC856
BC856A
BC856B
BC857A
BC857B
BC857C
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858
BC858A
BC858B
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BC856B
Abstract: BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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BC856
BC857
BC858
BC856
BC856A
BC856B
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BC857B
BC857C
BC856B
BC856A
BC857
BC857A
BC857B
BC857C
BC858
BC858A
BC858B
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BC856B 3F
Abstract: 858A
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m
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BC856
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BC856
BC856A
BC856B
BC857
BC857A
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BC856B 3F
858A
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Untitled
Abstract: No abstract text available
Text: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m
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BC856
BC857
BC858
BC856
BC856A
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BC857C
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. BC559A BC559B BC559C BC560 BCS60A ^C BO ^CEO (V) Min (V) Min 30 30 3D 30 50 50 30 30 45 45 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^EBO Pd (W) (V) (A) Min 6Tc=25°(
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BC559A
BC560
BCS60A
BC559C
O-92-4
BCX78
BC640
BC638-16
BC638-10
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Untitled
Abstract: No abstract text available
Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M ark in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H J - 0_ BC857A = 3E 2.8 0 .14 0.48 BC857B = 3F BC857C = 3G 0.38 BC858 = 3M 3 BC858A = 3]
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BC856
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BC856
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